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Surface And Interface Characterization Of High K Dielectric Materials On Iii Sb Semiconductor Substrates
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Book Synopsis Surface and Interface Characterization of High-K Dielectric Materials on III-Sb Semiconductor Substrates by : Dmitry M. Zhernokletov
Download or read book Surface and Interface Characterization of High-K Dielectric Materials on III-Sb Semiconductor Substrates written by Dmitry M. Zhernokletov and published by . This book was released on 2013 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface formation between high-k dielectric oxide materials and semiconductor surfaces is of critical importance to the development of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs) and tunnel field effect transistors (TFETs). This work investigates the deposition and characterization of a range of candidate high-k materials on III-Sb (InSb and GaSb) semiconductor substrates, with the focus on interface formation. The characterization techniques used to study the interface were X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), ion scattering spectroscopy, while atomic force microscopy (AFM) was used in some experiments for surface roughness measurements. The first part of this study evaluates the in-situ evolution of aluminum oxide (Al 2 O3 ) on indium antimonide (InSb) and gallium antimonide (GaSb) surfaces discussing preparation methods prior to dielectric deposition aimed at removing the native oxides and passivating the surfaces while keeping surface roughness to a minimum. For InSb surface the optimization of the ammonium sulphide (NH 4 ) 2 S passivation treatment was investigated in terms of the effectiveness at native oxide removal and minimizing defect generation. The interactions between hafnium oxide (HfO2 ) on HCl acid etched and (NH4 ) 2 S treated GaSb surfaces as well as Al2 O3 evolution on oxide free GaSb substrate were examined in the second part. A crystalline oxide/InAs(100) interface, as a potential path to avoid interface defect formation, was also investigated in term of stability upon Al2 O3 deposition and air exposure.
Book Synopsis Physics and Technology of High-k Gate Dielectrics 6 by : S. Kar
Download or read book Physics and Technology of High-k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Book Synopsis The Surface and Interface Characterization of High-k Dielectrics on Indium Phosphide and Gallium Phosphide by : Hong Dong
Download or read book The Surface and Interface Characterization of High-k Dielectrics on Indium Phosphide and Gallium Phosphide written by Hong Dong and published by . This book was released on 2013 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: High mobility III-V materials based metal oxide field effect transistors are strong contender to replace Si for the sub 14 nm technology node. InP has a potential to be used as a barrier layer between high mobility InGaAs channel and high-k dielectrics, to minimize the interfacial defects caused by oxidation of the channel material. The interface quality of InP and high-k dielectrics are critical to the transistor performance, such as, substhreshold swing, and drain induced barrier lowering. In situ studies of interfacial oxides evolution during the initial stages of atomic layer deposition (ALD) are investigated by interrupting the ALD reaction using monochromatic X-ray photoelectron spectroscopy (XPS). The In-oxides reduction is efficient, but not efficient for P-oxides during the ALD processes. The chemical states of P-oxides are transformed to more P-rich oxidation states during ALD, which are correlated to interfacial density of states by electrical characterization. The band gap states caused by the oxidation of InP surface elements are simulated by density functional theory. The indium out-diffusion through thick high-k dielectrics from high-k/InP stacks upon post deposition annealing is characterized using angle resolved XPS and low energy ion scattering spectroscopy. The indium out-diffusion is also discovered to occur through Al and Hf metal layers upon e-beam metal deposition. A Si interfacial passivation layer is attempted to control the interfacial oxidation and increase the thermal stability of this InP/Si/high-k stack. GaP as another phosphide, can provide some insight to understand the interfacial chemistry of phosphide, by comparing with InP system.
Book Synopsis High Dielectric Constant Materials by : Howard Huff
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
Book Synopsis Physics and Technology of High-k Gate Dielectrics 5 by : Samares Kar
Download or read book Physics and Technology of High-k Gate Dielectrics 5 written by Samares Kar and published by The Electrochemical Society. This book was released on 2007 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Book Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He
Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Book Synopsis Hf-based High-k Dielectrics by : Young-Hee Kim
Download or read book Hf-based High-k Dielectrics written by Young-Hee Kim and published by Morgan & Claypool Publishers. This book was released on 2005 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
Book Synopsis Hf-Based High-k Dielectrics by : Young-Hee Kim
Download or read book Hf-Based High-k Dielectrics written by Young-Hee Kim and published by Springer Nature. This book was released on 2022-06-01 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru–Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev
Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Book Synopsis Interlayer Dielectrics for Semiconductor Technologies by : Shyam P Muraka
Download or read book Interlayer Dielectrics for Semiconductor Technologies written by Shyam P Muraka and published by Elsevier. This book was released on 2003-10-13 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.
Book Synopsis Growth and Characterization of High-k Dielectrics for Field Effect Devices by : María Toledano Luque
Download or read book Growth and Characterization of High-k Dielectrics for Field Effect Devices written by María Toledano Luque and published by . This book was released on 2008 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: As metal oxide semiconductor devices scale down, the power dissipation due to gate current leakage is pushing to replace the conventional poly-Si/SiO2/Si gate stack with new materials. The thorough study of the physical properties of these materials under different growth techniques is essential in order to choose the more suitable alternative. Among the materials with a high dielectric constant (high-k), HfO2 and Hf silicates are the most promising substitutes. This thesis is focused on the composition, morphology and optical properties of HfO2 films deposited by high pressure sputtering, as well as, on the kinetics of the growth process. Metal-oxide-semiconductor devices are fabricated to evaluate the electrical properties of the films. Measurements of the capacitance as a function of both voltage and frequency are performed to determine the interface trap density. Finally, state of the art transistors fabricated at Interuniversity Microelectronic Center IMEC (Leuven, Belgium) are studied. The effect of hot carrier degradation on atomic layer deposited HfSiON/SiO2 gate stacks is studied by an improved charge pumping technique.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis E-MRS 2006 Symposium L on Characterization of High-k Dielectric Materials by :
Download or read book E-MRS 2006 Symposium L on Characterization of High-k Dielectric Materials written by and published by . This book was released on 2006 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-K Gate Dielectric Materials by : Taylor & Francis Group
Download or read book High-K Gate Dielectric Materials written by Taylor & Francis Group and published by Apple Academic Press. This book was released on 2022-07 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components (or Moore's law). This book presents a broad review of SiO2 materials, including a brief historical note of Moore's law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the transition of gate dielectrics with an EOT 1 nm and a selection of high-k materials. A review of the different deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working, structure, and modeling. This timely volume addresses the challenges of high-k gate dielectric materials and will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology. Key features: Discusses the state-of-the-art in high-k gate dielectric research for MOSFET in the nanoelectronics regime Reviews high-k applications in advanced MOS transistor structures Considers CMOS IC fabrication with high-k gate dielectric materials"--
Book Synopsis Proceedings of E-MRS spring meeting symposium L on characterization of high-k dielectric materials, Nice, france, 29 May - 2 June 2006 by :
Download or read book Proceedings of E-MRS spring meeting symposium L on characterization of high-k dielectric materials, Nice, france, 29 May - 2 June 2006 written by and published by . This book was released on 2006 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Synthesis, Characterization of High K Materials, Device Characteristics by : Bikshalu Kalagadda
Download or read book Synthesis, Characterization of High K Materials, Device Characteristics written by Bikshalu Kalagadda and published by LAP Lambert Academic Publishing. This book was released on 2015-05-29 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is about the synthesis, Characterization of high k nano materials like La2o3, LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method, pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materials, for Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter, NAND, NOR gates are investigated for High K dielectric La2O3 gate materials (K=27) using Arizona State Universities Predictive Technology Model
Book Synopsis Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors Using HF Chemistries and Atomic Layer Deposition by : Fee Li Lie
Download or read book Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors Using HF Chemistries and Atomic Layer Deposition written by Fee Li Lie and published by . This book was released on 2011 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: In-based III-V compound semiconductors have higher electron mobilities than either Si or Ge and direct band gaps. These properties could enable the fabrication of low power, high-speed n-channel metal oxide semiconductor field effect transistors (MOSFETs) and optoelectronics combining MOS technology with photonics. Since thermal and native oxides formed on III-V surfaces exhibit large current leakage and high densities of trap states, a key to incorporating these materials into advanced devices is the development of processing steps that form stable interfaces with dielectric layers. In this thesis, a processing flow consisting of native oxide removal using HF chemistries and deposition of high dielectric permittivity films using atomic layer deposition was investigated. Understanding the reaction mechanisms of these processes could provide the means of controlling composition and structure, yielding a desired electronic behavior. Quantitative X-ray photoelectron spectroscopy analysis of surfaces was coupled with electrical measurements on MOS capacitors of the interface quality in order to understand the nature of high-k/III-V interface defects and their repair. Ex situ liquid phase HF etching removed InSb, InAs, and InGaAs(100) native oxides and produced an Sb- or As-enriched surface, which oxidized when exposed to air. A 5 to 22 & Aring thick As- and Sb-rich residual oxide was left on the surface after etching and5 min of air exposure. The results showed that group V enrichment originated from the reduction of group V oxides by protons in the solution and the preferential reaction of HF with the group III atom of the substrate. A sub-atmosphericitalicin situ/italicgas phase HF/Hsub2/subO process removed native oxide from InSb, InAs, and InGaAs(100) surfaces, producing an In or Ga fluoride-rich sacrificial layer. A 50 to 90% oxide removal was achieved and a 10 to 25 & Aring-thick overlayer consisting of mainly In and Ga fluorides was produced. The composition and morphology of the sacrificial layer were controlled by the partial pressure of Hsub2/subO as well as the ratio of HF to Hsub2/subO used. Water played a critical role in the process by directly participating in the etching reaction and promoting the desorption of fluoride etching products. Accumulation of thick fluoride layer at high HF to water partial pressure ratios prevented adsorption and diffusion of etchant to the buried residual oxide. When oxide was removed, HF preferentially reacted with In or Ga atoms from the substrate, enriching the surface with group III fluorides and producing approximately one monolayer of elemental group V atoms at the interface. Interface reactions occurred during atomic layer deposition of Alsub2/subOsub3/sub, in which trimethylaluminum (TMA) removed surface oxides and fluorides. Chemically sharp InSb/Alsub2/subOsub3/suband InGaAs/Alsub2/subOsub3/subinterfaces were achieved for gas phase HF-etched InSb and liquid phase HF-etched InGaAs. A ligand transfer mechanism promotes nucleation of Alsub2/subOsub3/suband removal of III-V atoms from the sacrificial oxide and fluoride layers as volatile trimethyl indium, gallium, arsenic, and antimony. These reactions have been explained by the relative bond strength of surface and precursor metal atoms with O and F. Interaction of a InSb(100) surface with TiClsub4/subas a model for metal halide ALD precursors showed that similar ligand transfer reactions occured. Adsorbed chlorine from the dissociative adsorption of TiClsub4/subon the InSb surface at elevated temperature, however, preferentially etched In atoms from the substrate and produced a roughened surface. The quality of InGaAs/Alsub2/subOsub3/subinterfaces prepared by solvent cleaning and liquid phase HF were assessed electrically using capacitance-voltage and conductance measurements. Surface recombination velocity (SRV) values were extracted from themeasurements to represent the net effect of interface defects, which includes defect density and capture cross section. The InGaAs/Alsub2/subOsub3/subinterface prepared by solventcleaning consisted of interfacial native oxides while that etched in liquid phase HF consisted of submonolayer arsenic oxide. The two chemically contrasting interfaces, however, gave similar SRV values of 34.4±3.7 and 28.9±13.4 cm/s for native oxide and liquid phase HF prepared samples, respectively. This suggests that the presence or absence of oxides was not the only determining factor. Post Alsub2/subOsub3/subdeposition annealing in forming gas and NHsub3/subambient significantly improved the electrical quality for both surfaces, as shown by SRV values between 1 to 4 cm/s which is comparable to that of an ideal H-terminated Si surface. XPS analysis showed that the contribution from elemental As and Gasub2/subOsub3/subat the interface of both surfaces increased after annealing in forming gas and NHsub3/sub, likely due to thermal or hydrogen-induced reactionbetween interfacial As oxide and Ga atoms in the substrate. There was no correlation between the atomic coverages of interfacial elemental As and oxides to the SRV values. High activity defects at III-V/Alsub2/subOsub3/subinterfaces are associated with interfacial dangling bonds which were passivated thermally and chemically by annealing in forming gas and NHsub3
