Study and Fabrication of GaN-based Micro Light-Emitting Diodes

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Book Synopsis Study and Fabrication of GaN-based Micro Light-Emitting Diodes by : 陳建儒

Download or read book Study and Fabrication of GaN-based Micro Light-Emitting Diodes written by 陳建儒 and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Micro Light Emitting Diode: Fabrication and Devices

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Publisher : Springer Nature
ISBN 13 : 9811655057
Total Pages : 161 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Micro Light Emitting Diode: Fabrication and Devices by : Jong-Hyun Ahn

Download or read book Micro Light Emitting Diode: Fabrication and Devices written by Jong-Hyun Ahn and published by Springer Nature. This book was released on 2022-01-04 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on basic fundamental and applied aspects of micro-LED, ranging from chip fabrication to transfer technology, panel integration, and various applications in fields ranging from optics to electronics to and biomedicine. The focus includes the most recent developments, including the uses in large large-area display, VR/AR display, and biomedical applications. The book is intended as a reference for advanced students and researchers with backgrounds in optoelectronics and display technology. Micro-LEDs are thin, light-emitting diodes, which have attracted considerable research interest in the last few years. They exhibit a set of exceptional properties and unique optical, electrical, and mechanical behaviors of fundamental interest, with the capability to support a range of important exciting applications that cannot be easily addressed with other technologies. The content is divided into two parts to make the book approachable to readers of various backgrounds and interests. The first provides a detailed description with fundamental materials and production approaches and assembly/manufacturing strategies designed to target readers who seek an understanding ofof essential materials and production approaches and assembly/manufacturing strategies designed to target readers who want to understand the foundational aspects. The second provides detailed, comprehensive coverage of the wide range of device applications that have been achieved. This second part targets readers who seek a detailed account of the various applications that are enabled by micro-LEDs.

Fabrication and Application of GaN-based Micro Light-Emitting Diodes Array with 960 * 540 Pixels and 1920 * 1080 Pixels

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Book Synopsis Fabrication and Application of GaN-based Micro Light-Emitting Diodes Array with 960 * 540 Pixels and 1920 * 1080 Pixels by : Yi-Yu Wu

Download or read book Fabrication and Application of GaN-based Micro Light-Emitting Diodes Array with 960 * 540 Pixels and 1920 * 1080 Pixels written by Yi-Yu Wu and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Characterization of GaN-Based High-Speed Ultraviolet Micro Light-Emitting Diodes

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ISBN 13 :
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Book Synopsis Fabrication and Characterization of GaN-Based High-Speed Ultraviolet Micro Light-Emitting Diodes by : Min-Pang Lin

Download or read book Fabrication and Characterization of GaN-Based High-Speed Ultraviolet Micro Light-Emitting Diodes written by Min-Pang Lin and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of GaN Based Light Emitting Diodes (LEDs) with Specific Structures

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ISBN 13 :
Total Pages : 99 pages
Book Rating : 4.:/5 (18 download)

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Book Synopsis Fabrication of GaN Based Light Emitting Diodes (LEDs) with Specific Structures by : 李侑霖

Download or read book Fabrication of GaN Based Light Emitting Diodes (LEDs) with Specific Structures written by 李侑霖 and published by . This book was released on 2018 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of GaN Based Light-Emitting Diodes (LEDs) with Specific Side Wall Structures

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ISBN 13 :
Total Pages : 141 pages
Book Rating : 4.:/5 (12 download)

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Book Synopsis Fabrication of GaN Based Light-Emitting Diodes (LEDs) with Specific Side Wall Structures by : 陳君彥

Download or read book Fabrication of GaN Based Light-Emitting Diodes (LEDs) with Specific Side Wall Structures written by 陳君彥 and published by . This book was released on 2017 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of 1920x1080 Pixels GaN-based Micro-Light Emitting Diode Array and Application for Display

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (134 download)

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Book Synopsis Fabrication of 1920x1080 Pixels GaN-based Micro-Light Emitting Diode Array and Application for Display by : Chia-Yang Lin

Download or read book Fabrication of 1920x1080 Pixels GaN-based Micro-Light Emitting Diode Array and Application for Display written by Chia-Yang Lin and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Characteristics Optimization of GaN-Based Micro-Light Emitting Diode Array with 1920x1080 Pixels

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Total Pages : pages
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Book Synopsis Fabrication and Characteristics Optimization of GaN-Based Micro-Light Emitting Diode Array with 1920x1080 Pixels by : Yu-Ting Hsiao

Download or read book Fabrication and Characteristics Optimization of GaN-Based Micro-Light Emitting Diode Array with 1920x1080 Pixels written by Yu-Ting Hsiao and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of GaN-Based Light Emitting Diodes

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ISBN 13 :
Total Pages : 87 pages
Book Rating : 4.:/5 (713 download)

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Book Synopsis Fabrication of GaN-Based Light Emitting Diodes by : 劉亦浚

Download or read book Fabrication of GaN-Based Light Emitting Diodes written by 劉亦浚 and published by . This book was released on 2008 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Characterization of GaN-based Light Emitting Diodes

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ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.:/5 (698 download)

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Book Synopsis Fabrication and Characterization of GaN-based Light Emitting Diodes by : Ka-kuen Leung

Download or read book Fabrication and Characterization of GaN-based Light Emitting Diodes written by Ka-kuen Leung and published by . This book was released on 2010 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design and Fabrication of High Efficiency GaN-Based Light-Emitting Diodes

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ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (774 download)

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Book Synopsis Design and Fabrication of High Efficiency GaN-Based Light-Emitting Diodes by : 汪楷茗

Download or read book Design and Fabrication of High Efficiency GaN-Based Light-Emitting Diodes written by 汪楷茗 and published by . This book was released on 2006 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Analysis of GaN-Based High-Speed Blue Light-Emitting Diodes

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (112 download)

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Book Synopsis Fabrication and Analysis of GaN-Based High-Speed Blue Light-Emitting Diodes by : 蕭佳晏

Download or read book Fabrication and Analysis of GaN-Based High-Speed Blue Light-Emitting Diodes written by 蕭佳晏 and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Analysis of Resolution 1920 * 1080 with 5 "CEBCm" GaN-based Micro-Light Emitting Diodes for High Resolution Display Applications

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Book Synopsis Fabrication and Analysis of Resolution 1920 * 1080 with 5 "CEBCm" GaN-based Micro-Light Emitting Diodes for High Resolution Display Applications by : 王柏翔

Download or read book Fabrication and Analysis of Resolution 1920 * 1080 with 5 "CEBCm" GaN-based Micro-Light Emitting Diodes for High Resolution Display Applications written by 王柏翔 and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

III-Nitride LEDs

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Publisher : Springer Nature
ISBN 13 : 9811904367
Total Pages : 244 pages
Book Rating : 4.8/5 (119 download)

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Book Synopsis III-Nitride LEDs by : Shengjun Zhou

Download or read book III-Nitride LEDs written by Shengjun Zhou and published by Springer Nature. This book was released on 2022-05-26 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

Fabrication and Characterization of Gallium Nitride Based Micro-cavity Light Emitting Diodes

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ISBN 13 : 9780542929410
Total Pages : 240 pages
Book Rating : 4.9/5 (294 download)

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Book Synopsis Fabrication and Characterization of Gallium Nitride Based Micro-cavity Light Emitting Diodes by : Paul Morgan Pattison

Download or read book Fabrication and Characterization of Gallium Nitride Based Micro-cavity Light Emitting Diodes written by Paul Morgan Pattison and published by . This book was released on 2006 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication and characterization of novel gallium nitride based micro-cavity light emitting diodes is presented. A fabrication process was developed for creating a GaN light emitting diode within a micro-cavity of controllable thickness. The benefits of this structure can be enhanced light extraction efficiency, brightness, spectral purity, and directionality. The fabrication process involves flip chip processing, laser lift-off, and cavity thinning by inductively coupled plasma etching of the nitrogen faced GaN. Using these methods GaN based micro-cavity light emitting diodes were fabricated with cavity thicknesses as low as 350nm.

Electrical and Optical Studies on Modeling and Fabrication of Gallium Nitride (GaN) Based Optoelectronic Devices

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Book Synopsis Electrical and Optical Studies on Modeling and Fabrication of Gallium Nitride (GaN) Based Optoelectronic Devices by : Asim Mohammed A. Noor Elahi

Download or read book Electrical and Optical Studies on Modeling and Fabrication of Gallium Nitride (GaN) Based Optoelectronic Devices written by Asim Mohammed A. Noor Elahi and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The work in this dissertation is divided into two parts. The first part is related to the study of integration optoelectronic devices, such as Schottky Barrier Diodes (SBDs) and Metal Semiconductor Field Effect Transistors (MESFETs), along with Light Emitting Diodes (LEDs) on the same electronic chip. The second part of this dissertation is concerned with the electrical and optical modeling of gap-free microdisplay devices of based on gallium nitride, GaN, the optical modeling of nanophosphor-coupled porous layers for color conversion in III-Nitride microLED arrays, and also with some experimental studies on the photochemical and thermal stabilities of QDs materials that are integrated in the structure of GaN microLED devices. It is concluded from the first part of this work that the buffer layer located at the interface of unintentionally doped GaN layer and sapphire substrate has a strong effect on the forward current properties of lateral-type GaN Schottky diodes and plannar GaN metal-semiconductor-field-effect-transistors (MESFETs) grown on sapphire substrates (chapter 2). Experimental and simulation results have revealed that the interfacial region is acting as a channel in which the current passes in between the device metallic contacts because of the high conductivity that arises from a significant number of threading dislocations that are decorated by impurities due to the large lattice mismatches between GaN and sapphire. Owing to the presence of the interfacial regions, the lateral Schottky diodes exhibit high current densities but without change in their on-state-voltage, whereas the planar MESFETs could hardly reach cut-off or show saturation behavior. As a result, GaN-based vertical metal-semiconductor field-effect transistors(MESFETs) on commercial light-emitting-diode (LED) epi-wafers was fabricated and designed to overcome the latter problem (chapter 3). Also, the devices studied were simulated using charge transport model for better understanding of the current-voltage relationship. It was found that shrinking the size of the drain pillar helps reaching cut-off at much lower gate bias, even at high carrier concentration of unintentionally doped GaN and also with considerable leakage current caused by the Schottky barrier lowering. From the second part of the dissertation, it is disclosed that the isolation barrier region offers a better performance of a microLED microdisplay by minimizing the light cross-talk between the microLED pixels (chapter 4). It was found from the optical modeling results that the light cross-talk between the microLED pixels including the illuminating one in the isolation barrier planar structure is decreased significantly compared to the light cross-talk from all the pixels including the illuminating one in the non-planar air gap conventional structure of a microdisplay. The electrical simulation results reveal that the cross-talk current depends on the implanted ions energy, implanted ions dose and the width of the isolation barrier. The cross-talk current between the devices is decreased and the number of the affected pixels in the same row of a microdisplay is also reduced by the increase of the impurity concentration in the isolation barriers since the implanted ions are introducing deep level traps which results in current isolation between devices. Since the current microLED arrays are monochromatic emitting devices, nanophosphor-coupled nanoporous layers in III-nitride microLED arrays has been used to create colorful microLED arrays. The structure of those devices has been numerically analyzed along with its impacts on the application of microLED matrices in colorful display panels (chapter 5). It is concluded from the computational analysis carried out in this project that there remain some key challenges that need to be addressed in order to use such a structure in developing full-color miroLED display panels that simultaneously preserve the high-resolution and efficiency performances of microLED display devices. The extraction efficiency of both excitation (blue) and down-conversion (red) light from a nanophosphor-coupled LED devices have been demonstrated to drop drastically beyond specific thresholds when the porosity and thickness of the porous down-conversion layer increases. Additionally, it is found from the simulation that the cross-talk of down-converted light between adjacent micro-LED pixels is substantially higher compared to the excitation light cross-talk due to the location of the phosphors in the pore cavities and the resultant strong scattering by the surrounding nanopores. Furthermore, the instability of QDs is still a serious concern for the implementation of those emissive materials in the microLED display panels. Therefore, in Chapter 6, experimental studies on the thermal and photochemical stabilities of multicolored microLED display panels are presented. This chapter studied the thermal and photochemical stabilities of a 15 micrometer-thick layer of mixed red, green, and blue quantum dots produced via spin-cast deposition over a blue microLED matrix. This study also looked at the optical properties of QDs-based multicolored microLEDs. The results in this work provided us with a basic understanding of the ultimate limit of QD performance in microLED devices. The stability assessment results support and inspire the use of red, green, and blue QDs layers in blue microLED matrices to produce full-color microLED devices. Such research will aid in the design and production of high-efficiency, high-performance micro-LED display panels. Finally, Chapter 7 presents suggestions for the proposed future research in the field related to the scope of investigation reported in this thesis.

Fabrication of GaN-Based Light-Emitting Diodes with Specific Current Blocking and Surface Passivation Layers

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Book Synopsis Fabrication of GaN-Based Light-Emitting Diodes with Specific Current Blocking and Surface Passivation Layers by :

Download or read book Fabrication of GaN-Based Light-Emitting Diodes with Specific Current Blocking and Surface Passivation Layers written by and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: