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Studies Of Gas Surface Reactions Of In Situ Doping And Group Iv Thin Film Growth Employing Supersonic Molecular Beams
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Book Synopsis Studies of Gas-surface Reactions of in Situ Doping and Group IV Thin Film Growth Employing Supersonic Molecular Beams by : Nirmalya Maity
Download or read book Studies of Gas-surface Reactions of in Situ Doping and Group IV Thin Film Growth Employing Supersonic Molecular Beams written by Nirmalya Maity and published by . This book was released on 1996 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Gas-surface Reactivity and Film Growth Selectivity in Group-IV Semiconductor Heteroepitaxial Systems Via Supersonic Molecular Beam Techniques by : Andrew Martin Lam
Download or read book Studies of Gas-surface Reactivity and Film Growth Selectivity in Group-IV Semiconductor Heteroepitaxial Systems Via Supersonic Molecular Beam Techniques written by Andrew Martin Lam and published by . This book was released on 2000 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Supersonic Molecular Beam Studies of the Dissociative Chemisorption of Group IV Hydrides on Single Crystal Silicon and Germanium by : Martha Elizabeth Jones
Download or read book Supersonic Molecular Beam Studies of the Dissociative Chemisorption of Group IV Hydrides on Single Crystal Silicon and Germanium written by Martha Elizabeth Jones and published by . This book was released on 1997 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Direct Simulation Monte Carlo Modeling of Silicon Thin Film Deposition Using Supersonic Beams by : Gang Chen
Download or read book Direct Simulation Monte Carlo Modeling of Silicon Thin Film Deposition Using Supersonic Beams written by Gang Chen and published by . This book was released on 1998 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1995 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Electrochemical Society. High Temperature Materials Division Publisher :The Electrochemical Society ISBN 13 :9781566773195 Total Pages :526 pages Book Rating :4.7/5 (731 download)
Book Synopsis Fundamental Gas-phase and Surface Chemistry of Vapor-phase Deposition II and Process Control, Diagnostics and Modeling in Semiconductor Manufacturing IV by : Electrochemical Society. High Temperature Materials Division
Download or read book Fundamental Gas-phase and Surface Chemistry of Vapor-phase Deposition II and Process Control, Diagnostics and Modeling in Semiconductor Manufacturing IV written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 2001 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis In Situ Studies of the Surface Chemistry Reactions Involved in Gas-phase Deposition and Etching of Thin Dielectric Films by : Luis Fabián Peña Orduña
Download or read book In Situ Studies of the Surface Chemistry Reactions Involved in Gas-phase Deposition and Etching of Thin Dielectric Films written by Luis Fabián Peña Orduña and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, key aspects of the surface chemistry associated with gas phase deposition and etching are discussed. Atomic layer deposition (ALD) is a gas-phase deposition technique primarily known for its superior self-limiting binary process that affords precise control, uniform and conformal thin film growth. Despite the extensive work done with ALD, the mechanisms behind nucleation and steady state growth remain unclear for many ALD processes. Additionally, in an effort to meet today's device integration requirements, e.g., scaling down nanostructures and thermal budget restrictions during film deposition, thermal ALD processes requiring high temperatures (>300 C) are now being forced out of production due to adverse thermally induced side effects, e.g., device degradation. To address this challenge and promote reactivity at low temperatures (
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth of Complex Metal Oxides by : Gertjan Koster
Download or read book Epitaxial Growth of Complex Metal Oxides written by Gertjan Koster and published by Woodhead Publishing. This book was released on 2022-04-22 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth of Complex Metal Oxides, Second Edition reviews techniques and recent developments in the fabrication quality of complex metal oxides, which are facilitating advances in electronic, magnetic and optical applications. Sections review the key techniques involved in the epitaxial growth of complex metal oxides and explore the effects of strain and stoichiometry on crystal structure and related properties in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films, including optoelectronics, batteries, spintronics and neuromorphic applications. This new edition has been fully updated, with brand new chapters on topics such as atomic layer deposition, interfaces, STEM-EELs, and the epitaxial growth of multiferroics, ferroelectrics and nanocomposites. Examines the techniques used in epitaxial thin film growth for complex oxides, including atomic layer deposition, sputtering techniques, molecular beam epitaxy, and chemical solution deposition techniques Reviews materials design strategies and materials property analysis methods, including the impacts of defects, strain, interfaces and stoichiometry Describes key applications of epitaxially grown metal oxides, including optoelectronics, batteries, spintronics and neuromorphic applications
Book Synopsis Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy*Supported by the National Basic Research Program of China (973 Program) Under Grant Nos 2011CBA00106 and 2012CB927400, the National Natural Science Foundation of China Under Grant Nos 11274332 and 11227902, and Helmholtz Association Through the Virtual Institute for Topological Insulators (VITI). M. Y. Li and D. W. Shen are Also Supported by the Strategic Priority Research Program (B) of the Chinese Academy of Sciences Under Grant No XDB04040300 by :
Download or read book Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy*Supported by the National Basic Research Program of China (973 Program) Under Grant Nos 2011CBA00106 and 2012CB927400, the National Natural Science Foundation of China Under Grant Nos 11274332 and 11227902, and Helmholtz Association Through the Virtual Institute for Topological Insulators (VITI). M. Y. Li and D. W. Shen are Also Supported by the Strategic Priority Research Program (B) of the Chinese Academy of Sciences Under Grant No XDB04040300 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped (Sr1−x Lax )2 IrO4 (001) (x=0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigate the doping dependence of the electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. It is found that with the increasing doping content, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point is evidently observed in the 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that the doping effectively suppresses the insulating state with respect to the as-grown Sr2 IrO4, though the doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2 IrO4 .
Book Synopsis An Investigation of the Dynamics and Kinetics of Gas-surface Interactions Using Supersonic Molecular Beams by : Daniel Kelly
Download or read book An Investigation of the Dynamics and Kinetics of Gas-surface Interactions Using Supersonic Molecular Beams written by Daniel Kelly and published by . This book was released on 1996 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Delta-doping of Semiconductors by : E. F. Schubert
Download or read book Delta-doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
Book Synopsis An Investigation of Surface Reactions and Dynamics of Simple Molecules on a Single Crystalline Iridium Surface Using Supersonic Molecular Beams by : Randall William Verhoef
Download or read book An Investigation of Surface Reactions and Dynamics of Simple Molecules on a Single Crystalline Iridium Surface Using Supersonic Molecular Beams written by Randall William Verhoef and published by . This book was released on 1994 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermal and Low-energy Ion Doping of Silicon(001) During Molecular Beam Epitaxy: Dopant Incorporation Kinetics and Mechanisms by : Lucia Chen Markert
Download or read book Thermal and Low-energy Ion Doping of Silicon(001) During Molecular Beam Epitaxy: Dopant Incorporation Kinetics and Mechanisms written by Lucia Chen Markert and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal and accelerated-ion doping, with In and Sb, during Si(001) molecular-beam epitaxy were investigated as a function of growth temperature T$sb{rm s}$ (500-1050$spcirc$C), dopant energy E$sb{rm d}$ (thermal-500 eV), and Si deposition rate R$sb{rm Si}$ (0.18-4.7 $mu$m h$sp{-1}).$ Surface segregation during thermal doping led to severe profile broadening and low temperature-dependent incorporation probabilities $sigmasb{rm d,th}.$ On the other hand, $sigmasb{rm d}$+ for In-ions at energies E$sb{rm In}$+ $ge$ 200 eV or Sb-ions accelerated by potentials V$sb{rm Sb}$+ $ge$ 300 V was essentially unity up to T$sb{rm s}sim850$-900$spcirc$C. At lower ion energies, $sigmasb{rm d}$+ was temperature and energy dependent, but was still much higher than $sigmasb{rm d,th}.$ Abrupt tailored depth profiles were easily obtained by controlling the ion current; layers $delta$-doped with a 250 V Sb-ion beam were $le$2 nm wide. Concentration transient analysis (CTA) was developed in order to obtain segregation data from SIMS depth profiles of modulation-doped films. The surface-segregated layer, trapped in the film using programmed T$sb{rm s}$ changes, formed a concentration spike with an integrated area corresponding to the dopant surface coverage $thetasb{rm d}.$ CTA measurements showed that Sb coevaporation led to $thetasb{rm Sb}$ values as high as 0.9 ML at 675$spcirc$C, whereas segregation was insignificant, $thetasb{rm Sb}le4times10sp{-3}$ ML, in films doped with Sb-ions accelerated by 100 V. Effective Sb segregation energies $rm Delta Gsb{Sb},$ calculated using CTA data, were both T$sb{rm s}$ and R$sb{rm Si}$ dependent. Since the segregant supply in these experiments was at the surface, rather than in the bulk, the effective $rm Delta Gsb{Sb}$ values were related to segregation from near-surface sites which reach equilibrium with the surface during film growth. The $delta$-doping and surface segregation results were the basis for modifying the dopant incorporation model developed by our group. By accounting for film growth separately from the equations describing dopant populations in the lattice potential wells, diffusion becomes the only mechanism for changing concentration gradients. A minimum of four sites between the surface and the bulk were necessary to describe the temperature and growth-rate dependences of Sb incorporation and segregation. The energy parameters for the intermediate sites were obtained by fitting experimental Sb incorporation and segregation data.
