Single Event Effects and Radiation Hardening Methodologies in SiGe HBTs for Extreme Environment Applications

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (844 download)

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Book Synopsis Single Event Effects and Radiation Hardening Methodologies in SiGe HBTs for Extreme Environment Applications by : Stanley David Phillips

Download or read book Single Event Effects and Radiation Hardening Methodologies in SiGe HBTs for Extreme Environment Applications written by Stanley David Phillips and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Field-effect transistor technologies have been critical building blocks for satellite systems since their introduction into the microelectronics industry. The extremely high cost of launching payloads into orbit necessitates systems to have small form factor, ultra low-power consumption, and reliable lifetime operation, while satisfying the performance requirements of a given application. Silicon-based complementary metal-oxide-semiconductors (Si CMOS) have traditionally been able to adequately meet these demands when coupled with radiation hardening techniques that have been developed over years of invested research. However, as customer demands increase, pushing the limits of system throughput, noise, and speed, alternative technologies must be employed. Silicon-germanium BiCMOS platforms have been identfied as a technology candidate for meeting the performance criteria of these pioneering satellite systems and deep space applications, contingent on their ability to be hardened to radiation-induced damage. Given that SiGe technology is a relative new- comer to terrestrial and extra-terrestrial applications in radiation-rich environments, the same wealth of knowledge of time-tested radiation hardening methodologies has not been established as it has for Si CMOS. Although SiGe BiCMOS technology has been experimentally proven to be inherently tolerant to total-ionizing dose damage mechanism, the single event susceptibility of this technology remains a primary concern. The objective of this research is to characterize the physical mechanisms that drive the origination of ion-induced transient terminal currents in SiGe HBTs that subsequently lead to a wide range of possible single event phenomena. Building upon this learning, a variety of device-level hardening methodologies are explored and tested for efficacy.

Silicon-germanium Devices and Circuits for Cryogenic and High-radiation Space Environments

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (668 download)

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Book Synopsis Silicon-germanium Devices and Circuits for Cryogenic and High-radiation Space Environments by : Edward Wilcox

Download or read book Silicon-germanium Devices and Circuits for Cryogenic and High-radiation Space Environments written by Edward Wilcox and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into three chapters. First, the very nature of single-event transients present in SiGe HBTs is explored in Chapter 3 using a heavy-ion microbeam with both bulk and SOI platforms [31]. Then, in Chapter 4, a new device-level SEU-hardening technique is presented along with circuit-design techniques necessarily for its implementation. In Chapter 5, the circuit-level radiation-hardening techniques necessarily to mitigate the effects shown in Chapter 3 are developed and tested [32]. Finally, in Chapter 6, the performance of the SiGe HBT in a cryogenic testing environment is characterized to understand how the widely-varying temperatures of outer space may affect device performance. Ultimately, the built-in performance, TID-tolerance, and now-developing SEU-hardness of the SiGe HBT make a compelling case for extreme environment electronics. The low-cost, high-yield, and maturity of Si manufacturing combine with modern bandgap engineering and modern CMOS to produce a high-quality, high-performance BiCMOS platform suitable for space-borne systems.

Extreme Environment Electronics

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Publisher : CRC Press
ISBN 13 : 1351832808
Total Pages : 1044 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

SiGe-based Re-engineering of Electronic Warfare Subsystems

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Publisher : Springer
ISBN 13 : 3319474030
Total Pages : 343 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis SiGe-based Re-engineering of Electronic Warfare Subsystems by : Wynand Lambrechts

Download or read book SiGe-based Re-engineering of Electronic Warfare Subsystems written by Wynand Lambrechts and published by Springer. This book was released on 2016-10-19 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts. It explains in detail the theoretical and technical background, and addresses all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne / spaceborne electronic warfare, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, to date only limited information has been available on its use in electronic warfare systems, especially in developing nations. Addressing that need, this book offers essential engineering guidelines that especially focus on the speed and reliability of current-generation SiGe circuits and highlight emerging innovations that help to ensure the sustainable long-term integration of SiGe into electronic warfare systems.

Research on the Radiation Effects and Compact Model of SiGe HBT

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Publisher : Springer
ISBN 13 : 9811046123
Total Pages : 187 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis Research on the Radiation Effects and Compact Model of SiGe HBT by : Yabin Sun

Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices

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Publisher : World Scientific
ISBN 13 : 9789812794703
Total Pages : 354 pages
Book Rating : 4.7/5 (947 download)

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Book Synopsis Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices by : Dan M. Fleetwood

Download or read book Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices written by Dan M. Fleetwood and published by World Scientific. This book was released on 2004 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."

Millimeter-Wave Integrated Circuits

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Publisher : Springer Nature
ISBN 13 : 3030443981
Total Pages : 259 pages
Book Rating : 4.0/5 (34 download)

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Book Synopsis Millimeter-Wave Integrated Circuits by : Mladen Božanić

Download or read book Millimeter-Wave Integrated Circuits written by Mladen Božanić and published by Springer Nature. This book was released on 2020-03-16 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.

Silicon-germanium Heterojunction Bipolar Transistors

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Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Radiation Tolerant Electronics, Volume II

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Publisher : Mdpi AG
ISBN 13 : 9783036564456
Total Pages : 0 pages
Book Rating : 4.5/5 (644 download)

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Book Synopsis Radiation Tolerant Electronics, Volume II by : Paul LeRoux

Download or read book Radiation Tolerant Electronics, Volume II written by Paul LeRoux and published by Mdpi AG. This book was released on 2023-01-16 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade. After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects.

SiGe Heterojunction Bipolar Transistors

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Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

X-rays, Gamma-rays

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Publisher :
ISBN 13 :
Total Pages : 76 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis X-rays, Gamma-rays by : Lou Williams Page

Download or read book X-rays, Gamma-rays written by Lou Williams Page and published by . This book was released on 1977 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low Temperature Electronics

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Publisher : Elsevier
ISBN 13 : 0080510507
Total Pages : 986 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Low Temperature Electronics by : Edmundo A. Gutierrez-D

Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D and published by Elsevier. This book was released on 2000-10-25 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Temperature Electronics: Physics, Devices, Circuits, and Applications summarizes the recent advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. Furthermore, this book provides an exploration of the currently available theory, research, and technologies related to cryoelectronics, including treatment of the solid state physical properties of the materials used in these systems. Current applications are found in infrared systems, satellite communications and medical equipment. There are opportunities to expand in newer fields such as wireless and mobile communications, computers, and measurement and scientific equipment. Low temperature operations can offer certain advantages such as higher operational speeds, lower power dissipation, shorter signal transmission times, higher semiconductor and metal thermal conductivities, and improved digital and analog circuit performance. The computer, telecommunication, and cellular phone market is pushing the semiconductor industry towards the development of very aggressive device and integrated circuit fabrication technologies. This is taking these technologies towards the physical miniaturization limit, where quantum effects and fabrication costs are becoming a technological and economical barrier for further development. In view of these limitations, operation of semiconductor devices and circuits at low temperature (cryogenic temperature) is studied in this book. * It is a book intended for a wide audience: students, scientists, technology development engineers, private companies, universities, etc. * It contains information which is for the first time available as an all-in-one source; Interdisciplinary material is arranged and made compatible in this book * It is a must as reference source

Applications of Silicon-Germanium Heterostructure Devices

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Publisher : CRC Press
ISBN 13 : 1420034693
Total Pages : 402 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Applications of Silicon-Germanium Heterostructure Devices by : C.K Maiti

Download or read book Applications of Silicon-Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

2019 IEEE Radiation Effects Data Workshop

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Publisher :
ISBN 13 : 9781728138299
Total Pages : pages
Book Rating : 4.1/5 (382 download)

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Book Synopsis 2019 IEEE Radiation Effects Data Workshop by : IEEE Staff

Download or read book 2019 IEEE Radiation Effects Data Workshop written by IEEE Staff and published by . This book was released on 2019-07-08 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Part of the 2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC) It is a poster presentation of radiation testing of electronics and radiation test facilities There will be between 50 to 70 posters

Polarization Effects in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.3/5 (873 download)

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Book Synopsis Polarization Effects in Semiconductors by : Debdeep Jena

Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Moon

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Publisher : Springer Science & Business Media
ISBN 13 : 3642279694
Total Pages : 771 pages
Book Rating : 4.6/5 (422 download)

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Book Synopsis Moon by : Viorel Badescu

Download or read book Moon written by Viorel Badescu and published by Springer Science & Business Media. This book was released on 2012-03-22 with total page 771 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Earth has limited material and energy resources. Further development of the humanity will require going beyond our planet for mining and use of extraterrestrial mineral resources and search of power sources. The exploitation of the natural resources of the Moon is a first natural step on this direction. Lunar materials may contribute to the betterment of conditions of people on Earth but they also may be used to establish permanent settlements on the Moon. This will allow developing new technologies, systems and flight operation techniques to continue space exploration. In fact, a new branch of human civilization could be established permanently on Moon in the next century. But, meantime, an inventory and proper social assessment of Moon’s prospective energy and material resources is required. This book investigates the possibilities and limitations of various systems supplying manned bases on Moon with energy and other vital resources. The book collects together recent proposals and innovative options and solutions. It is a useful source of condensed information for specialists involved in current and impending Moon-related activities and a good starting point for young researchers.

Wafer Bonding

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Publisher : Springer Science & Business Media
ISBN 13 : 3662108275
Total Pages : 510 pages
Book Rating : 4.6/5 (621 download)

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Book Synopsis Wafer Bonding by : Marin Alexe

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.