Semiconductor Device Modeling with Spice

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Author :
Publisher : McGraw Hill Professional
ISBN 13 : 9780071349550
Total Pages : 500 pages
Book Rating : 4.3/5 (495 download)

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Book Synopsis Semiconductor Device Modeling with Spice by : Giuseppe Massabrio

Download or read book Semiconductor Device Modeling with Spice written by Giuseppe Massabrio and published by McGraw Hill Professional. This book was released on 1998-12-22 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.

Semiconductor Modeling:

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 0387241604
Total Pages : 769 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Semiconductor Modeling: by : Roy Leventhal

Download or read book Semiconductor Modeling: written by Roy Leventhal and published by Springer Science & Business Media. This book was released on 2007-01-10 with total page 769 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers

Introduction to Semiconductor Device Modelling

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Author :
Publisher : World Scientific
ISBN 13 : 9789810236939
Total Pages : 242 pages
Book Rating : 4.2/5 (369 download)

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Book Synopsis Introduction to Semiconductor Device Modelling by : Christopher M. Snowden

Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Semiconductor Modeling Techniques

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3642275125
Total Pages : 267 pages
Book Rating : 4.6/5 (422 download)

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Book Synopsis Semiconductor Modeling Techniques by : Xavier Marie

Download or read book Semiconductor Modeling Techniques written by Xavier Marie and published by Springer Science & Business Media. This book was released on 2012-06-26 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

Power Integrity Modeling and Design for Semiconductors and Systems

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Author :
Publisher : Pearson Education
ISBN 13 : 0132797178
Total Pages : 599 pages
Book Rating : 4.1/5 (327 download)

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Book Synopsis Power Integrity Modeling and Design for Semiconductors and Systems by : Madhavan Swaminathan

Download or read book Power Integrity Modeling and Design for Semiconductors and Systems written by Madhavan Swaminathan and published by Pearson Education. This book was released on 2007-11-19 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: The First Comprehensive, Example-Rich Guide to Power Integrity Modeling Professionals such as signal integrity engineers, package designers, and system architects need to thoroughly understand signal and power integrity issues in order to successfully design packages and boards for high speed systems. Now, for the first time, there's a complete guide to power integrity modeling: everything you need to know, from the basics through the state of the art. Using realistic case studies and downloadable software examples, two leading experts demonstrate today's best techniques for designing and modeling interconnects to efficiently distribute power and minimize noise. The authors carefully introduce the core concepts of power distribution design, systematically present and compare leading techniques for modeling noise, and link these techniques to specific applications. Their many examples range from the simplest (using analytical equations to compute power supply noise) through complex system-level applications. The authors Introduce power delivery network components, analysis, high-frequency measurement, and modeling requirements Thoroughly explain modeling of power/ground planes, including plane behavior, lumped modeling, distributed circuit-based approaches, and much more Offer in-depth coverage of simultaneous switching noise, including modeling for return currents using time- and frequency-domain analysis Introduce several leading time-domain simulation methods, such as macromodeling, and discuss their advantages and disadvantages Present the application of the modeling methods on several advanced case studies that include high-speed servers, high-speed differential signaling, chip package analysis, materials characterization, embedded decoupling capacitors, and electromagnetic bandgap structures This book's system-level focus and practical examples will make it indispensable for every student and professional concerned with power integrity, including electrical engineers, system designers, signal integrity engineers, and materials scientists. It will also be valuable to developers building software that helps to analyze high-speed systems.

Noise in Semiconductor Devices

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3662045303
Total Pages : 241 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Noise in Semiconductor Devices by : Fabrizio Bonani

Download or read book Noise in Semiconductor Devices written by Fabrizio Bonani and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.

Analysis and Simulation of Semiconductor Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3709187524
Total Pages : 308 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr

Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Semiconductor Devices

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Author :
Publisher : Prentice Hall
ISBN 13 :
Total Pages : 746 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Semiconductor Devices by : Kevin M. Kramer

Download or read book Semiconductor Devices written by Kevin M. Kramer and published by Prentice Hall. This book was released on 1997 with total page 746 pages. Available in PDF, EPUB and Kindle. Book excerpt: CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."

Semiconductor Device Physics and Simulation

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9780306457241
Total Pages : 352 pages
Book Rating : 4.4/5 (572 download)

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Book Synopsis Semiconductor Device Physics and Simulation by : J.S. Yuan

Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 1998-05-31 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Physical Models of Semiconductor Quantum Devices

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9400771746
Total Pages : 416 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Physical Models of Semiconductor Quantum Devices by : Ying Fu

Download or read book Physical Models of Semiconductor Quantum Devices written by Ying Fu and published by Springer Science & Business Media. This book was released on 2013-08-29 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.

Simulation of Semiconductor Devices and Processes

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3709166578
Total Pages : 525 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr

Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Introduction to Semiconductor Device Yield Modeling

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Author :
Publisher : Artech House Materials Science
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (43 download)

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Book Synopsis Introduction to Semiconductor Device Yield Modeling by : Albert V. Ferris-Prabhu

Download or read book Introduction to Semiconductor Device Yield Modeling written by Albert V. Ferris-Prabhu and published by Artech House Materials Science. This book was released on 1992 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text, the first of its kind, delivers a systematically organized introduction to the theory and practice of yield prediction. The book addresses the economic need for accurate yield prediction, and clarifies the important role it plays in the semiconductor industry.

The Monte Carlo Method for Semiconductor Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 9783211821107
Total Pages : 382 pages
Book Rating : 4.8/5 (211 download)

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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 1989-10-30 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Theory of Semiconductor Quantum Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3642105564
Total Pages : 382 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Theory of Semiconductor Quantum Devices by : Fausto Rossi

Download or read book Theory of Semiconductor Quantum Devices written by Fausto Rossi and published by Springer Science & Business Media. This book was released on 2011-01-13 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Monte Carlo Simulation of Semiconductor Devices

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9401581339
Total Pages : 343 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue

Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Nitride Semiconductor Devices

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Publisher : John Wiley & Sons
ISBN 13 : 3527406670
Total Pages : 521 pages
Book Rating : 4.5/5 (274 download)

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Book Synopsis Nitride Semiconductor Devices by : Joachim Piprek

Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-04-09 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

Modeling Bipolar Power Semiconductor Devices

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Author :
Publisher : Morgan & Claypool Publishers
ISBN 13 : 162705121X
Total Pages : 96 pages
Book Rating : 4.6/5 (27 download)

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Book Synopsis Modeling Bipolar Power Semiconductor Devices by : Tanya K. Gachovska

Download or read book Modeling Bipolar Power Semiconductor Devices written by Tanya K. Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-03 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.