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Relation Between Growth Temperature And The Structure Of Sic Crystals Grown By The Sublimation Method
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Book Synopsis On the Formation of Beta-SiC in the Initial Growth Stage by : Yoshizō Inomata
Download or read book On the Formation of Beta-SiC in the Initial Growth Stage written by Yoshizō Inomata and published by . This book was released on 1972 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of Beta-SiC at temperatures outside its thermally stable range of 1,400-1,600C was studied experimentally using the sublimation procedure and the synthetic method with molten silicon. From consideration of the molar surface energy of Beta- and alpha-SiC, the following are shown to be the main causes for the phenomenon: (1) Given an equal volume of crystallites, the molar surface energy of the Beta-type is always lower than that of the alpha-type based on its higher lattice symmetry; (2) the bonding energy of the Beta-type is the lowest among the SiC polytypes from comparison of the band gaps; (3) the rate of transition from the Beta- to the alpha-type is not too large. The free energy gaps among the SiC polytypes were found to be smaller than 100 cal/mole. The effects of pressure and polarity are also discussed.
Book Synopsis Effect of Growth Rate on the Structure and Stacking Disorder of SiC Crystals Grown by the Lely Method by : Yoshizō Inomata
Download or read book Effect of Growth Rate on the Structure and Stacking Disorder of SiC Crystals Grown by the Lely Method written by Yoshizō Inomata and published by . This book was released on 1969 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator.
Download or read book NBS Special Publication written by and published by . This book was released on 1918 with total page 1164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide by : Moumita Mukherjee
Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1971 with total page 1330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth written by Vadim Glebovsky and published by BoD – Books on Demand. This book was released on 2019-11-06 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, a variety of topics related to crystal growth is extensively discussed. The topics encompass the physics of growing single crystals of different functional materials, single-crystalline thin films, and even the features of crystallization of biofats and oils. It is intended to provide information on advancements in technologies for crystal growth to physicists, researches, as well as engineers working with single-crystalline functional materials.
Book Synopsis U.S. Government Research & Development Reports by :
Download or read book U.S. Government Research & Development Reports written by and published by . This book was released on 1970 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials 2007 by : Akira Suzuki
Download or read book Silicon Carbide and Related Materials 2007 written by Akira Suzuki and published by Trans Tech Publications Ltd. This book was released on 2008-09-26 with total page 1407 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu, Japan, October 14 – 19, 2007
Book Synopsis Growth of Crystals by : E. Givargizov
Download or read book Growth of Crystals written by E. Givargizov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present volume continues the tradition of the preceding volumes. covering a wide range of crystal growth problems and treating aspects of critical importance for crystalliza tion. Changes in this field of knowledge have. however, changed the criteria for selection of papers for inclusion in this series. The increasing role of crystals in science and technology is even more apparent today. The study and utilization of these highly perfect objects of nature considerably facilitates progress in the physics and chemistry of solids. quantum electronics, optics, microelectron ics, and other sciences. The demand for crystals and crystal devices has grown steadily and has led to the emergence and rapid growth of the single crystal industry (we can safely saythat the state ofthe art in this industry is indicative ofthe overall scientific and technolo- cal potential of a country). At the same time, the introduction of crystallization techniques into other industries is gaining ever-increasing importance. To illustrate this last state ment, we can mention the fabrication of textured structural materials and direct methods of metal reduction in ores by using chemical vapor transport techniques. Crystallization tech ll niques progress both in "width" and in "depth : traditional methods are modernized. and novel techniques appear, some of them at the junction of the already existing technologies (for example, flux growth of crystals, growth from vapor with participation of the liquid phase, etc. ).
Book Synopsis Consolidated Translation Survey by :
Download or read book Consolidated Translation Survey written by and published by . This book was released on 1969-05 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis U.S. Government Research & Development Reports by :
Download or read book U.S. Government Research & Development Reports written by and published by . This book was released on 1970-04 with total page 1446 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CVD growth of SiC for high-power and high-frequency applications by : Robin Karhu
Download or read book CVD growth of SiC for high-power and high-frequency applications written by Robin Karhu and published by Linköping University Electronic Press. This book was released on 2019-02-14 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type. SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth. In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers. In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.
Book Synopsis Vapour Growth and Epitaxy by : G.W. Cullen
Download or read book Vapour Growth and Epitaxy written by G.W. Cullen and published by Elsevier. This book was released on 2013-09-03 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.
Download or read book Si Silicon written by and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume concludes the coverage of silicon carbide, SiC, begun in "Silicon" Supplement Volume B 2, 1984, subtitled "Silicon Carbide - Part I". Part I described the physical properties of SiC, SiC diodes, molecular species in the SiC-C gas phase, and amorphous silicon-carbon alloys. The current Part II ("Silicon" Supplement Volume B 3,1986) covers in its initial chapter the Si-C phase diagram and in the final chapters the higher order systems of Si and C with additional elements through boron, arranged according to the Gmelin system. In between some 95% of the volume focusses on SiC, beginning with its natural occurrence, preparation and formation, and purification, continuing with its chemical analysis, manufacture of special ized forms, electrochemistry, and chemical reactions, and concluding with descriptions of its myriad applications. The final applications section covering electronic devices also describes similar applications of the amorphous Si-C alloys. The successive chapters in this volume are often closely interrelated, since it is often necessary to synthesize SiC directly in a form in which it will be applied. SiC cannot be melted and cast, nor rolled nor drawn, nor is it easily electroplated or sintered or purified. Silicon carbide first became known to man when E. G. Acheson in 1891 used an electric current to heat a mixture of clay and carbon to extremely high temperatures.
Book Synopsis Bibliography, with Abstracts, of AFCRL Publications from 1 July to 30 September 1971 by : Air Force Cambridge Research Laboratories (U.S.)
Download or read book Bibliography, with Abstracts, of AFCRL Publications from 1 July to 30 September 1971 written by Air Force Cambridge Research Laboratories (U.S.) and published by . This book was released on 1971 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This bibliography lists all AFCRL in-house reports, journal articles, and contractor reports issued from 1 July to 30 September 1971. Abstracts are included.
Book Synopsis Compound Semiconductor Bulk Materials And Characterizations, Volume 2 by : Osamu Oda
Download or read book Compound Semiconductor Bulk Materials And Characterizations, Volume 2 written by Osamu Oda and published by World Scientific. This book was released on 2012-10-31 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.
Book Synopsis Chemical Processes—Advances in Research and Application: 2013 Edition by :
Download or read book Chemical Processes—Advances in Research and Application: 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 988 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Processes—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Chemical Processes—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Chemical Processes—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
