Quantum-mechanical Investigation of Germanium Nanostructures on Silicon Surfaces

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ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (244 download)

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Book Synopsis Quantum-mechanical Investigation of Germanium Nanostructures on Silicon Surfaces by : Aditi Shankar Rao

Download or read book Quantum-mechanical Investigation of Germanium Nanostructures on Silicon Surfaces written by Aditi Shankar Rao and published by . This book was released on 2008 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Germanium (SiGe) Nanostructures

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Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 649 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki

Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Investigation of Quantum Confinement in Silicon and Germanium Semiconductor Nanocrystals and Their Application in Photonic Devices

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ISBN 13 :
Total Pages : 490 pages
Book Rating : 4.:/5 (56 download)

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Book Synopsis Investigation of Quantum Confinement in Silicon and Germanium Semiconductor Nanocrystals and Their Application in Photonic Devices by : Gildardo Rios Delgado

Download or read book Investigation of Quantum Confinement in Silicon and Germanium Semiconductor Nanocrystals and Their Application in Photonic Devices written by Gildardo Rios Delgado and published by . This book was released on 1997 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon, Germanium, and Their Alloys

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Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Selective Silicon and Germanium Nanoparticle Deposition on Amorphous Surfaces

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ISBN 13 :
Total Pages : 276 pages
Book Rating : 4.:/5 (226 download)

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Book Synopsis Selective Silicon and Germanium Nanoparticle Deposition on Amorphous Surfaces by : Shawn Stephen Coffee

Download or read book Selective Silicon and Germanium Nanoparticle Deposition on Amorphous Surfaces written by Shawn Stephen Coffee and published by . This book was released on 2007 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in Semiconductor Nanostructures

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Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Advances in Semiconductor Nanostructures by : Alexander V. Latyshev

Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Silicon and Germanium Nanostructures

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ISBN 13 :
Total Pages : 404 pages
Book Rating : 4.:/5 (922 download)

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Book Synopsis Silicon and Germanium Nanostructures by : Xiaotang Lu

Download or read book Silicon and Germanium Nanostructures written by Xiaotang Lu and published by . This book was released on 2015 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of chemical routes exist for a wide range of nanomaterials with tunable size, shape, composition and surface chemistry. Of these materials, silicon (Si) and germanium (Ge) nanomaterials have been some of the most challenging to synthesize. Solution-liquid-solid (SLS) growth of Si was studied using tin (Sn) as the seeding metal. Si nanorods with narrow diameters can be grown by the decomposition of trisilane in hot squalane in the presence of Sn nanocrystals. Photoluminescence could be obtained from the Si nanorods by thermal hydrosilylation passivation. This colloidal synthesis could be further simplified to a single-step reaction procedure by the in situ formation of Sn seed particles. In addition to trisilane as a Si source, isotetrasilane, neopentasilane and cyclohexasilane were studied for Si nanorod growth: all three reactants enabled nanorod formation at lower growth temperatures. A monophenylsilane (MPS) enhanced growth was discovered for supercritical fluid-liquid-solid (SFLS) growth of Ge nanowires that enables the Ge conversion of ~100%. A variety of metalorganic compounds were studied for replacing pre-synthesized metal nanoparticles to induce Ge nanowire growth. Si and Ge nanowires are some of the most promising anode materials in lithium ion batteries (LIBs) because of their high lithium storage capacity. However, the significant chemical and physical changes that occur during cycling hamper their practical uses. In situ transmission electron microscopy (TEM) techniques were conducted to observe and understand structural and interfacial changes of the Si and Ge nanowires during electrochemical cycling; and, therefore, resolving the problems with current anodes by materials modification. The in situ TEM experiments showed that the incorporation of Sn into Si nanowires can enhance their rate capability. But the enhanced Li diffusion leads to the premature pore formation in Si nanowires. Ge nanowires has been discovered the potential as sodium ion battery anodes after an initial activation with a lithiation step to amorphize the nanowires.

Nanoclusters and Nanostructured Surfaces

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Publisher :
ISBN 13 : 9781588831828
Total Pages : 501 pages
Book Rating : 4.8/5 (318 download)

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Book Synopsis Nanoclusters and Nanostructured Surfaces by : Asok K. Ray

Download or read book Nanoclusters and Nanostructured Surfaces written by Asok K. Ray and published by . This book was released on 2010 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Quantum Confined Semiconductor Nanostructures: Volume 737

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Publisher : Cambridge University Press
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Quantum Confined Semiconductor Nanostructures: Volume 737 by : Victor I. Klimov

Download or read book Quantum Confined Semiconductor Nanostructures: Volume 737 written by Victor I. Klimov and published by Cambridge University Press. This book was released on 2003-04-16 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented.

Some Investigations on Germanium and Silicon Surfaces

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ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (795 download)

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Book Synopsis Some Investigations on Germanium and Silicon Surfaces by : A. H. Boonstra

Download or read book Some Investigations on Germanium and Silicon Surfaces written by A. H. Boonstra and published by . This book was released on 1968 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Second Order Non-linear Optics of Silicon and Silicon Nanostructures

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Publisher : CRC Press
ISBN 13 : 1315360012
Total Pages : 309 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Second Order Non-linear Optics of Silicon and Silicon Nanostructures by : O. A. Aktsipetrov

Download or read book Second Order Non-linear Optics of Silicon and Silicon Nanostructures written by O. A. Aktsipetrov and published by CRC Press. This book was released on 2018-09-03 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors. The book contains six chapters that focus on: The physical properties and linear optics of silicon Basic theoretical concepts of reflected second harmonics (RSH) The authors’ theory of the generation of RSH at the non-linear medium–linear medium interface An analytical review of work on the non-linear optics of silicon The results of non-linear optical studies of silicon nanostructures A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.

Properties of Silicon Germanium and SiGe:Carbon

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Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852967836
Total Pages : 358 pages
Book Rating : 4.9/5 (678 download)

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Book Synopsis Properties of Silicon Germanium and SiGe:Carbon by : Erich Kasper

Download or read book Properties of Silicon Germanium and SiGe:Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

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Publisher : Springer Science & Business Media
ISBN 13 : 3642409059
Total Pages : 72 pages
Book Rating : 4.6/5 (424 download)

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Book Synopsis Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations by : Rui-Qin Zhang

Download or read book Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations written by Rui-Qin Zhang and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Final Report

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Publisher :
ISBN 13 :
Total Pages : 26 pages
Book Rating : 4.:/5 (727 download)

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Book Synopsis Final Report by :

Download or read book Final Report written by and published by . This book was released on 2007 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanotechnology holds great promise for many application fields, ranging from the semiconductor industry to medical research and national security. Novel, nanostructured materials are the fundamental building blocks upon which all these future nanotechnologies will be based. In this Strategic Initiative (SI) we conducted a combined theoretical and experimental investigation of the modeling, synthesis, characterization, and design techniques which are required to fabricate semiconducting and metallic nanostructures with enhanced properties. We focused on developing capabilities that have broad applicability to a wide range of materials and can be applied both to nanomaterials that are currently being developed for nanotechnology applications and also to new, yet to be discovered, nanomaterials. During this 3 year SI project we have made excellent scientific progress in each of the components of this project. We have developed first-principles techniques for modeling the structural, electronic, optical, and transport properties of materials at the nanoscale. For the first time, we have simulated nanomaterials both in vacuum and in aqueous solution. These simulation capabilities harness the worldleading computational resources available at LLNL to model, at the quantum mechanical level, systems containing hundreds of atoms and thousands of electrons. Significant advances in the density functional and quantum Monte Carlo techniques employed in this project were developed to enable these techniques to scale up to simulating realistic size nanostructured materials. We have developed the first successful techniques for chemically synthesizing crystalline silicon and germanium nanoparticles and nanowires. We grew the first macroscopic, faceted superlattice crystals from these nanoparticles. We have also advanced our capabilities to synthesize semiconductor nanoparticles using physical vapor deposition techniques so that we are now able to control of the size, shape and surface structure of these nanoparticles. We have made advances in characterizing the surface of nanoparticles using x-ray absorption experiments. Throughout this SI a number of long-term, strategic external collaborations have been established. These collaborations have resulted in 30 joint publications, strategic hires of postdocs and graduate students from these groups into groups at LLNL and the submission of joint research grants. We have developed collaborations on the theory and modeling of nanomaterials with the groups of Profs. Ceder and Marzari (MIT), Crespi (Penn State), Freeman (Northwestern), Grossman and Lester (UC Berkeley), Mitas (North Carolina State), and Needs (Cambridge). We are collaborating with Dr. Alivisatos's group in the Molecular Foundry at Lawrence Berkeley Laboratory on the fabrication, characterization and modeling of inorganic nanomaterials. We are working with Prof. Majumdar's group at UC Berkeley on the characterization of nanomaterials. We are working with the molecular diamond group at Chevron-Texaco who has developed a process for extracting mono-disperse samples of nano-scale diamonds from crude oil. We are collaborating with Dr. Chen at UCSF to develop CdSe nanoparticle-biolabels. As a result of the outstanding scientific achievements and the long-term collaborations developed during this strategic initiative we have been extremely successful in obtaining external funding to continue and grow this research activity at the LLNL. We have received two DARPA grants to support the further development of our computational modeling techniques and to develop carbon nanotube based molecular separation devices. We have received two new Office of Science BES grants to support our nanomaterials modeling and synthesis projects. We have received funding from the NA22 office of DOE to develop the materials modeling capabilities begun in this SI for modeling detector materials. We have received funding from Intel Corporation to apply the modeling techniques developed in this initiative to examine silicon nanowires fabricated on computer chips. We are also pursuing several additional sources of funding from BES, the DHS, and NIH to support the continuation of the research programs developed in this SI. The remainder of this report and the attached publications describe the background to this SI research project and the details of the scientific achievements that have been made.

Properties of Silicon Germanium and SiGe

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Publisher : Inst of Engineering & Technology
ISBN 13 : 9780863415579
Total Pages : 372 pages
Book Rating : 4.4/5 (155 download)

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Book Synopsis Properties of Silicon Germanium and SiGe by : Erich Kasper

Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 1999-12 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Electronic and Spintronic Transport in Germanium Nanostructures

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Publisher :
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.:/5 (881 download)

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Book Synopsis Electronic and Spintronic Transport in Germanium Nanostructures by : En-Shao Liu

Download or read book Electronic and Spintronic Transport in Germanium Nanostructures written by En-Shao Liu and published by . This book was released on 2014 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The digital information processing system has benefited tremendously from the invention and development of complementary metal-oxide-semiconductor (CMOS) integrated circuits. The relentless scaling of the physical dimensions of transistors has been consistently delivering improved overall circuit density and performance every technology generation. However, the continuation of this trend is in question for silicon-based transistors when quantum mechanical tunneling becomes more relevant; further scaling in feature sizes can lead to increased leakage current and power dissipation. Numerous research efforts have been implemented to address these scaling challenges, either by aiming to increase the performance at the transistor level or to introduce new functionalities at the circuit level. In the first approach, novel materials and device structures are explored to improve the performance of CMOS transistors, including the use of high-mobility materials (e.g. III-V compounds and germanium) as the channel, and multi-gate structures. On the other hand, the overall circuit capability could be increased if other state variables are exploited in the electronic devices, such as the electron spin degree of freedom (e.g. spintronics). Here we explore the potential of germanium nanowires in both CMOS and beyond-CMOS applications, studying the electronic and spintronic transport in this material system. Germanium is an attractive replacement to silicon as the channel material in CMOS technology, thanks to its lighter effective electron and hole mass. The nanowire structures, directly synthesized using chemical vapor deposition, provide a natural platform for multi-gate structures in which the electrostatic control of the gate is enhanced. We present the realization and scaling properties of germanium-silicon-germanium core-shell nanowire n-type, [omega]-gate field-effect transistors (FETs). By studying the channel length dependence of NW FET characteristics, we conclude that the intrinsic channel resistance is the main limiting factor of the drive current of Ge NW n-FETs. Utilizing the electron spins in semiconductor devices can in principle enhance overall circuit performance and functionalities. Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin based-devices. Here we demonstrate lateral spin injection and detection in Ge NWs, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. We map out the contact resistance window for which spin transport is observed, manifestly showing the conductivity matching required for spin injection.

Microwave-assisted Synthesis and Ligand Exchange of Germanium and Germanium-tin Alloy Nanoparticles

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ISBN 13 : 9781392640050
Total Pages : pages
Book Rating : 4.6/5 (4 download)

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Book Synopsis Microwave-assisted Synthesis and Ligand Exchange of Germanium and Germanium-tin Alloy Nanoparticles by : Kathryn Ann Newton

Download or read book Microwave-assisted Synthesis and Ligand Exchange of Germanium and Germanium-tin Alloy Nanoparticles written by Kathryn Ann Newton and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is an indirect band gap semiconductor in Group IV. Ge has a bulk band gap of 0.67 eV and a Bohr radius of 24 nm. Because of its large Bohr radius, Ge nanoparticles (Ge NPs) are quantum confined over a wide size range, and its band gap can be tuned as a function of particle size, composition, or surface passivation. Ge NPs have been achieved by colloidal synthesis routes using convection and microwave-assisted heating methods. The presented work applies microwave-assisted heating to the synthesis and ligand exchange of colloidal Ge NPs and germanium-tin alloy nanoparticles (Ge[subscript 1-x]Sn[subscript x] NPs). Chapter 1 is a brief introduction to Group IV semiconductor nanoparticles. It reviews research in the colloidal synthesis and ligand exchange of Ge and Ge[subscript 1-x]Sn[subscript x] NPs. Chapter 2 demonstrates the synthesis of Ge NPs by the reduction of GeI2 and GeI4 in oleylamine using microwave-assisted heating. The effects of precursor ratio, temperature, and solvent are considered. An optimized ligand exchange procedure, using N2H4 to remove the oleylamine ligand from the surface of Ge NPs, is also presented. In Chapter 3, microwave-assisted methods are applied to the synthesis and ligand exchange of Ge[subscript 1-x]Sn[subscript x] NPs, which are prepared by the reduction of GeI2 and bis[bis(trimethylsilyl)amino]tin(II). It is demonstrated that reaction temperature can be used to control particle size over a narrow Sn composition range. Surface passivation with dodecanethiol is achieved by ligand exchange without loss of Sn composition. Tauc plot analysis of optical absorbance spectra confirm an indirect band gap for Ge[subscript 1-x]Sn[subscript x] NPs. Microwave-assisted heating methods are applied to the reduction of GeI2 in the presence of SiI4 in oleylamine in Chapter 4. The synthesized Ge NPs are observed to increase in size and crystallinity, relative to Ge NPs synthesized without SiI4 in the reaction, as the amount of SiI4 in the reaction is increased. SEM-EDS and STEM-EELS confirm Si is in the nanoparticle ensemble and is localized around the outside of the Ge NPs. Quantum confinement is confirmed by optical spectroscopy, and cyclic voltammetry shows changes in band gap originate from changes in conduction band energy. Additional investigation of the effects of nanoparticle synthesis temperature, solvent, and ligand concentration on ligand exchange are also presented. In Chapter 5, ligand exchange using dioctadecyl disulfide as a ligand precursor is demonstrated in the re-passivation of oleylamine-capped Ge NPs with octadecanethiol. Oleylamine is removed from the surface of Ge NPs by sonication with N2H4. Re-passivation is achieved by stirring solutions of uncapped-Ge NPs, dioctyldecyl disulfide, and diphenylphosphine. Microwave-assisted heating of this solution at 150 °C also achieves re-passivation. Direct ligand exchange methods, in which oleylamine-capped Ge NPs are stirred with dioctadecyl disulfide and diphenylphosphine, are also demonstrated to achieve octadecanethiol passivation. Appendix 1 provides details of additional investigation in the colloidal synthesis of Ge[subscript 1-x]Sn[subscript x] NPs. The reduction of GeI2 and bis[bis(trimethylsilyl)amino]tin(II) in hexadecylamine using microwave-assisted heating is demonstrated to yield alloy NPs with Sn impurities. It is shown that reaction temperature can be used to control Sn composition over a narrow particle size range when GeI2 and bis[bis(trimethylsilyl)amino]tin(II) are reduced in octylamine. The effects of reaction volume were also investigated. The effects of size and morphology of nano tungsten(VI) oxide (WO3) on photocatalytic water oxidation are presented in Appendix 2. Nanodots (32 ± 16 nm), nanoplates (476 ± 98 nm by 58 ± 16 nm), and WO3 microcrystals (~2 [mu]m) were applied as anode materials for the photocatalytic oxidation of water, generating 31.6, 16.5, and 2.9 [mu]mol h-1 O2 (g), respectively. Photoelectrochemistry experiments demonstrate that anodic photocurrent decreases with particle size but little change in photo-onset potential is observed. The one-dimensional continuity model is used to describe trends in photocatalytic activity, which are attributed to minority and majority carrier transport kinetics.