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Passivation Study Of Gallium Arsenide And Indium Phosphide Substrates Using Diamond Like Hydrocarbon And Silicon Nitride Films
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Book Synopsis Passivation Study of Gallium Arsenide and Indium Phosphide Substrates Using Diamond-like Hydrocarbon and Silicon Nitride Films by : Candita Jean Meek
Download or read book Passivation Study of Gallium Arsenide and Indium Phosphide Substrates Using Diamond-like Hydrocarbon and Silicon Nitride Films written by Candita Jean Meek and published by . This book was released on 2003 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Master's Theses Directories written by and published by . This book was released on 2004 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Education, arts and social sciences, natural and technical sciences in the United States and Canada".
Book Synopsis An Investigation of Silicon Nitride on Gallium Arsenide by : Thomas Raymond Ohnstein
Download or read book An Investigation of Silicon Nitride on Gallium Arsenide written by Thomas Raymond Ohnstein and published by . This book was released on 1982 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Silicon and Gallium Arsenide Thin Films on Insulating Ceramic Substrates by : John Theophil Milek
Download or read book Epitaxial Silicon and Gallium Arsenide Thin Films on Insulating Ceramic Substrates written by John Theophil Milek and published by . This book was released on 1968 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art literature survey is presented on the success of epitaxial deposition of silicon and gallium arsenide thin films on ceramic substrates for device applications. The electrical, thermal, chemical and crystallographic properties of sapphire, spinel, beryllium oxide, magnesium oxide, diamond, quartz, silicon carbide, aluminum silicate glass, glazed ceramic and other miscellaneous ceramic substrate materials are presented. A master flow chart is developed to identify each variable at each stage of the film/substrate preparation and resultant device fabrication processes. A series of charts identifying each of these variables as reported in the literature for each substrate material is presented. A complete bibliographic review of silicon epitaxial deposition, independent of substrate, is also presented. (Author).
Book Synopsis Gallium Arsenide on Silicon Substrate by : Young-Soon Kim
Download or read book Gallium Arsenide on Silicon Substrate written by Young-Soon Kim and published by . This book was released on 2019-05-31 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: semiconductor wafers Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Gallium Arsenide on Silicon Substrate" by Young-Soon Kim, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Book Synopsis The Heteroepitaxial Growth and Characterization of Indium Phosphide on Gallium Arsenide Substrates by : Choong-hyun Yoo
Download or read book The Heteroepitaxial Growth and Characterization of Indium Phosphide on Gallium Arsenide Substrates written by Choong-hyun Yoo and published by . This book was released on 1991 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Vapor Deposition of Silicon Nitride Films on Gallium Arsenide by : Thomas Raymond Ohnstein
Download or read book Chemical Vapor Deposition of Silicon Nitride Films on Gallium Arsenide written by Thomas Raymond Ohnstein and published by . This book was released on 1977 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dielectric Films on Gallium Arsenide by : W. F. Croydon
Download or read book Dielectric Films on Gallium Arsenide written by W. F. Croydon and published by Gordon & Breach Publishing Group. This book was released on 1981 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films by : Huelya Birey
Download or read book Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films written by Huelya Birey and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum and silicon nitride films were deposited on lightly doped n-type GaAs:Si by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. (Author).
Book Synopsis The Optimization of the Growth on (111) Gallium Arsenide and (111) Indium Phosphide Substrates by Molecular Beam Epitaxy by : Hock Huat Yeo
Download or read book The Optimization of the Growth on (111) Gallium Arsenide and (111) Indium Phosphide Substrates by Molecular Beam Epitaxy written by Hock Huat Yeo and published by . This book was released on 2001 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent material has been grown on (111) surface using molecular beam epitaxy. This dissertation covers the optimal growth condition of (111)B GaAs and (111)B InP. With electrostatic analysis plus semiempirical approach, a simple equation for estimating the 2DEG sheet density is also presented in this dissertation.
Book Synopsis Encapsulation Studies and Planar Device Fabrication in Gallium Arsenide by : Max John Helix
Download or read book Encapsulation Studies and Planar Device Fabrication in Gallium Arsenide written by Max John Helix and published by . This book was released on 1979 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature photoluminescence and Auger electron spectroscopy (AES) are used to study SIO2 and Si3N4 as encapsulants for high temperature annealing of GaAs. These encapsulants are used in the fabrication of planar diodes in GaAs, and the resulting electrical and optical properties of the devices are examined. Silicon dioxide or silicon oxy-nitride layers allow the outdiffusion of Ga when they are used to encapsulate GaAs during high temperature annealing. .In contrast, silicon nitride layers which are essentially free of oxygen can be used to anneal GaAs with negligible Ga outdiffusion. A versatile rf plasma deposition system capable of depositing high quality Si3N4 films at low temperatures is described. In this system, reacting gases are introduced into the reaction chamber separately, and great care is taken to reduce residual oxygen in the system. Composition (ration of silicon to nitrogen), index of refraction, etch rate, and deposition rate are reported for films deposited under various conditions. Electrical characterization of the Si3N4 films is also presented.
Book Synopsis Compound Semiconductor Surface Passivation and Novel Device Processing: Volume 573 by : H. Hasegawa
Download or read book Compound Semiconductor Surface Passivation and Novel Device Processing: Volume 573 written by H. Hasegawa and published by . This book was released on 1999-07-13 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processing. These two themes formed the basis for the April 1999 symposium. The 34 papers are divided into five broad topics areas: fundamentals of surfaces and their passivation, novel approaches for surface passivation and device processing, the structural, transport and optical properties of oxides, compound semiconductor surface passivation and novel device processing, and electronic devices and processing. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book Ceramic Abstracts written by and published by . This book was released on 1994 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Passivation of Silicon Using Silicon Nitride and a Study of the Silicon-silicon Nitrade System by : Ernest John Michael Kendall
Download or read book The Passivation of Silicon Using Silicon Nitride and a Study of the Silicon-silicon Nitrade System written by Ernest John Michael Kendall and published by . This book was released on 1969 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Application and Analysis of Silicon Nitride Films for Surface Passivation of High Efficiency Silicon Solar Cells by :
Download or read book Application and Analysis of Silicon Nitride Films for Surface Passivation of High Efficiency Silicon Solar Cells written by and published by . This book was released on 2015 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Two solar cell types are discussed in this thesis. Firstly, the Metal Wrap-Through cell, where the emitter-contact metallization of the front side is wrapped through holes in the wafer to the cell back. Optimization of several cell processing steps led to an increase of more than 2% absolute in cell efficiency. By integrating these optimized process steps a cell efficiency of 17.9% was reached. Using these multicrystalline cells in modules, a highest module efficiency of 17.0% on aperture area was obtained, which was the world record at the end of 2009 and the beginning of 2010. Secondly, the Interdigitated Back Contact cell, where both the emitter and base region and their contacts are positioned at the cell back. This thesis describes the fabrication of this cell based on all-screen-printed patterning and metallization. By optimizing the front surface passivation, a short circuit current of 41.5 mA/cm2 and a cell efficiency of 19.1% was obtained. To further improve cell efficiency, surface passivation by a-SiNx:H is studied. By applying a NH3 plasma prior to a-SiNx:H layer deposition, it was found that the amount of K-centers and thereby the surface passivation could be varied without changing the actual a-SiNx:H deposition process and thus the a-SiNx:H bulk layer properties. Detailed characterization showed a gradual change in the composition of a-SiNx:H in the first 2 nm. By changing the temperature of the NH3 plasma, the amount and penetration depth of N in the first few nm's in the Si substrate were altered."--Samenvatting auteur.
Book Synopsis High Quality Indium Arsenide and Related Alloys Grown on Gallium Phosphide Substrates Using a Novel Liquid Phase - Molecular Beam Epitaxy Technique by : Aristo Yulius
Download or read book High Quality Indium Arsenide and Related Alloys Grown on Gallium Phosphide Substrates Using a Novel Liquid Phase - Molecular Beam Epitaxy Technique written by Aristo Yulius and published by . This book was released on 2004 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
