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Operation Of Silicon Germanium Heterojunction Bipolar Transistors On
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Book Synopsis Operation of Silicon-germanium Heterojunction Bipolar Transistors on by : Marco Bellini
Download or read book Operation of Silicon-germanium Heterojunction Bipolar Transistors on written by Marco Bellini and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Book Synopsis Cryogenic Operation of Silicon-germanium Heterojunction Bipolar Transistors and Its Relation to Scaling and Optimization by : Jiahui Yuan
Download or read book Cryogenic Operation of Silicon-germanium Heterojunction Bipolar Transistors and Its Relation to Scaling and Optimization written by Jiahui Yuan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate the performance limits of SiGe HBTs and provides essential information for further device scaling. Technology computer aided design (TCAD) and sophisticated on-wafer DC and RF measurements are essential in this research. Drift-diffusion (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector current kink effect in first-generation SiGe HBTs at deep cryogenic temperatures. A theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic temperatures is proposed to explain such effects. Intricate design of the germanium and base doping profiles can greatly suppress both carrier freezeout and the heterojunction barrier effect, leading to a significant improvement in the DC and RF performance for NASA lunar missions. Furthermore, cooling is used as a tuning knob to better understand the performance limits of SiGe HBTs. The consequences of cooling SiGe HBTs are in many ways similar to those of combined vertical and lateral device scaling. A case study of low-temperature DC and RF performance of prototype fourth-generation SiGe HBTs is presented. This study summarizes the performance of all three prototypes of these fourth-generation SiGe HBTs within the temperature range of 4.5 to 300 K. Temperature dependence of a fourth-generation SiGe CML gate delay is also examined, leading to record performance of Si-based IC. This work helps to analyze the key optimization issues associated with device scaling to terahertz speeds at room temperature. As an alternative method, an fT -doubler technique is presented as an attempt to reach half-terahertz speeds. In addition, a roadmap for terahertz device scaling is given, and the potential relevant physics associated with future device scaling are examined. Subsequently, a novel superjunction collector design is proposed for higher breakdown voltages. Hydrodynamic models are used for the TCAD studies that complete this part of the work. Finally, Monte Carlo simulations are explored in the analysis of aggressively-scaled SiGe HBTs.
Book Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Book Synopsis The Physics, Optimization, and Modeling of Cryogenically Operated Silicon-germanium Heterojunction Bipolar Transistors by : Alvin Jose Joseph
Download or read book The Physics, Optimization, and Modeling of Cryogenically Operated Silicon-germanium Heterojunction Bipolar Transistors written by Alvin Jose Joseph and published by . This book was released on 1996 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Germanium Heterojunction Bipolar Transistors by : Jessica E. Metcalfe
Download or read book Silicon Germanium Heterojunction Bipolar Transistors written by Jessica E. Metcalfe and published by . This book was released on 2006 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology by : Adnan Ahmed
Download or read book Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology written by Adnan Ahmed and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the author's knowledge.
Book Synopsis Applications of Silicon-Germanium Heterostructure Devices by : C.K Maiti
Download or read book Applications of Silicon-Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Book Synopsis Characterization of Transistor Matching in Silicon-germanium Heterojunction Bipolar Transistors by : Mustansir M. Pratapgarhwala
Download or read book Characterization of Transistor Matching in Silicon-germanium Heterojunction Bipolar Transistors written by Mustansir M. Pratapgarhwala and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. Another part of the study involved measuring similar devices at different temperatures ranging from 298K to 377K. As a general trend, it was observed that device-to-device mismatch improved with increasing temperature.
Book Synopsis Profile Design Issues and Optimization of Silicon-Germanium Heterojunction Bipolar Transistors by : Gang Zhang
Download or read book Profile Design Issues and Optimization of Silicon-Germanium Heterojunction Bipolar Transistors written by Gang Zhang and published by . This book was released on 2002 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Germanium Heterojunction Bipolar Transistors by : Staffan Bruce
Download or read book Silicon Germanium Heterojunction Bipolar Transistors written by Staffan Bruce and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors for Large-scale Low-power Cryogenic Sensing Systems by : Shirin Montazeri
Download or read book Silicon-germanium Heterojunction Bipolar Transistors for Large-scale Low-power Cryogenic Sensing Systems written by Shirin Montazeri and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Cryogenic low noise amplifiers (LNAs) are one of the key components in many emerging applications such as radio astronomy or quantum computing in which a weak incoming signal needs to be read out. There have been extensive studies on the feasibility of leveraging silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) to implement cryogenic LNAs in the past. The deployment of such LNAs in the future large-scale systems in radio astronomy or quantum computing is contingent upon the possibility of developing LNAs with reduced DC power dissipation to enable the cooling of a large number of array elements inside a cryogenic cooler. In this dissertation, we focus on the cryogenic operation of SiGe HBTs at reduced supply voltages for the implementation of ultra low- power LNAs and their applications for scalable receiver systems. In addition, the limitations of the SiGe HBT cryogenic models for the operation at high current densities are investigated for the implementation of modern high speed SiGe HBT circuits.
Book Synopsis Vertical Profile Engineering and Reliability Study of Silicon-germanium Heterojunction Bipolar Transistors by : Kenneth Sen-Chun Liao
Download or read book Vertical Profile Engineering and Reliability Study of Silicon-germanium Heterojunction Bipolar Transistors written by Kenneth Sen-Chun Liao and published by . This book was released on 1996 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Frequency Characterization of Silicon-germanium Heterojunction Bipolar Transistors by : Shiming Zhang
Download or read book High Frequency Characterization of Silicon-germanium Heterojunction Bipolar Transistors written by Shiming Zhang and published by . This book was released on 1999 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
