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Ohmic Contacts To N Type Aluminum Gallium Arsenide Alsubscript Xgasubscript Xas Olesser Than Or Equal Toxlesser Than Or Equal To03 Utilizing Limited Solid Phase Reactions
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Book Synopsis Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions by : Eric David Marshall
Download or read book Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions written by Eric David Marshall and published by . This book was released on 1989 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Alloyed Aluminum-germanium-nickel Ohmic Contacts to N-type Gallium Arsenide by : Edouard Philippe Baaklini
Download or read book Alloyed Aluminum-germanium-nickel Ohmic Contacts to N-type Gallium Arsenide written by Edouard Philippe Baaklini and published by . This book was released on 1990 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Aluminum-germanium-nickel Ohmic Contacts to N- and P-type Gallium Arsenide by : Tim B. Haddock
Download or read book Aluminum-germanium-nickel Ohmic Contacts to N- and P-type Gallium Arsenide written by Tim B. Haddock and published by . This book was released on 1988 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications by :
Download or read book Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications written by and published by . This book was released on 1988 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new approach for fabricating nonalloyed ohmic contacts to gallium arsenide was developed. The approach uses ultrathin layers of heavily doped germanium or silicon in contact with gallium arsenide to alter the Schottky barrier height(phi B) at the gallium arsenide interface. For n-type gallium arsenide phi B could be varied from about 0.3 to 1.0 eV. The low barriers are useful for tunneling ohmic contacts to n-gallium arsenide while the high barriers should be useful for p-gallium arsenide ohmic contacts and for Field Effect Transistor (FET) gate applications. In some instances it was necessary to interpose a thin nonmetallic electrically conducting barrier between the contact metal and the thin germanium or silicon layer to preserve optimum contact properties. Specific contact resistivity measurements indicated that contact resistivity
Book Synopsis Ohmic Contacts for Gallium Arsenide Devices by : Kenneth L. Klohn
Download or read book Ohmic Contacts for Gallium Arsenide Devices written by Kenneth L. Klohn and published by . This book was released on 1968 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study was made of various metals and metal alloys (Ag, Ni, In, and Au-Zn) which would make ohmic contacts to p- or n-type GaAs to determine the value of contact resistivity as a function of substrate impurity concentration. Contact resistivity values for p-type material varied from 1.2 x 10 to the -4th power ohm-cm sq for 2.8 x 10 to the 17th power/cc to 7.3 x 10 to the -7th ohm-cm sq for 9 x 10 to the 19th power/cc, and for n-type material from 2.5 x 10 to the -4th power ohm-cm sq for 1 x 10 to the 17th power/cc to 1.5 x 10 to the -5th power ohm-cm sq for 3 x 10 to the 18th power/cc. The metals were applied by evaporation or plating and followed by microalloying. The improvement in contact resistivity, as substrate impurity concentration increases, indicates the desirability of incorporating a thin, heavily doped region at the surface of a device by means of diffusion or epitaxy. The improvement in power output for a typical laser diode and its modified versions resulting from the reduction in R sub s is compared. (Author).
Book Synopsis Ohmic Contacts to Gallium Arsenide by : Salvatore Pablo Lucia
Download or read book Ohmic Contacts to Gallium Arsenide written by Salvatore Pablo Lucia and published by . This book was released on 1985 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to N-gallium Arsenide Using Indium on Gold Via a Heterojunction by : Wai Fai Yee
Download or read book Ohmic Contacts to N-gallium Arsenide Using Indium on Gold Via a Heterojunction written by Wai Fai Yee and published by . This book was released on 1988 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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