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Mosfet Modeling Simulation And Parameter Extraction In 4h 6h Silicon Carbide
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Book Synopsis Power Electronics and Power Quality by : José Gabriel Oliveira Pinto
Download or read book Power Electronics and Power Quality written by José Gabriel Oliveira Pinto and published by MDPI. This book was released on 2020-04-23 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power quality (PQ) is receiving more and more attention from consumers, distribution system operators, transmission system operators, and other entities related to electrical power systems. As PQ problems have direct implications for business productivity, causing high economic losses, the research and development monitoring technologies and power electronics solutions that ensure the PQ of the power systems are matters of utmost importance. This book is a collection of high quality papers published in the “Power Electronics and Power Quality” Special Issue of the journal Energies. It reflects on the latest investigations and the new trends in this field.
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ICCWCS 2019 written by Jamal Zbitou and published by European Alliance for Innovation. This book was released on 2019 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, computer science engineering and telecommunications are two important areas linked and even inseparable. This is obvious for the user who connects the modem of his computer on his mobile phone or telephone line to access, via the global data network, the information available on the servers. The both domains are evolving rapidly and the development of new architectures of systems dedicated to telecommunications and computing becomes essential. Especially, wireless transmission systems with high data rate. Two parts of these systems should be developed software and hardware. Another area that is renewable energies becomes more attractive for researchers in order to develop new conversion systems with good performances, and a good optimization of energy. For example, in wireless sensor systems, we try to develop new protocols permitting to have a good autonomy in terms of energy.
Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Book Synopsis POWER/HVMOS Devices Compact Modeling by : Wladyslaw Grabinski
Download or read book POWER/HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Book Synopsis Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy by : Bekkay Hajji
Download or read book Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy written by Bekkay Hajji and published by Springer. This book was released on 2018-08-01 with total page 786 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings present a selection of refereed papers presented at the 1st International Conference on Electronic Engineering and Renewable Energy (ICEERE 2018) held during 15-17 April 2018, Saidi, Morocco. The contributions from electrical engineers and experts highlight key issues and developments essential to the multifaceted field of electrical engineering systems and seek to address multidisciplinary challenges in Information and Communication Technologies. The book has a special focus on energy challenges for developing the Euro-Mediterranean regions through new renewable energy technologies in the agricultural and rural areas. The book is intended for academia, including graduate students, experienced researchers and industrial practitioners working in the fields of Electronic Engineering and Renewable Energy.
Book Synopsis Advanced Silicon Carbide Devices and Processing by : Stephen Saddow
Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Book Synopsis The Designer’s Guide to Spice and Spectre® by : Ken Kundert
Download or read book The Designer’s Guide to Spice and Spectre® written by Ken Kundert and published by Springer Science & Business Media. This book was released on 2006-04-11 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Engineering productivity in integrated circuit product design and - velopment today is limited largely by the effectiveness of the CAD tools used. For those domains of product design that are highly dependent on transistor-level circuit design and optimization, such as high-speed logic and memory, mixed-signal analog-digital int- faces, RF functions, power integrated circuits, and so forth, circuit simulation is perhaps the single most important tool. As the complexity and performance of integrated electronic systems has increased with scaling of technology feature size, the capabilities and sophistication of the underlying circuit simulation tools have correspondingly increased. The absolute size of circuits requiring transistor-level simulation has increased dramatically, creating not only problems of computing power resources but also problems of task organization, complexity management, output representation, initial condition setup, and so forth. Also, as circuits of more c- plexity and mixed types of functionality are attacked with simu- tion, the spread between time constants or event time scales within the circuit has tended to become wider, requiring new strategies in simulators to deal with large time constant spreads.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Silicon Carbide by : Wolfgang J. Choyke
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Book Synopsis Power Electronics Semiconductor Devices by : Robert Perret
Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Book Synopsis Semiconductor Power Devices by : Josef Lutz
Download or read book Semiconductor Power Devices written by Josef Lutz and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Book Synopsis Investigation of Reliability Aspects of Power Semiconductors in Photovoltaic Central Inverters for Sunbelt Regions by : Christian Felgemacher
Download or read book Investigation of Reliability Aspects of Power Semiconductors in Photovoltaic Central Inverters for Sunbelt Regions written by Christian Felgemacher and published by kassel university press GmbH. This book was released on 2018-03-23 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: High reliability and system lifetimes in the range of 30 years are essential for renewable energy systems such as photovoltaic power plants to minimise costs for the generated electric energy. At the same time such systems are used in regions with high solar irradiance and also harsh environmental conditions. Therefore, designs for photovoltaic inverters need to meet not only the key design criteria of high conversion efficiency but also need to be very robust and at the same time meet challenging cost targets. In this dissertation aspects concerning the lifetime and reliability of power semiconductors in photovoltaic central inverters are investigated. On key topic of the dissertation is the measurement of the voltage dependent failure rate due to cosmic radiation induced single-event-burnout of SiC and Si power semiconductors. The second topic is the development of a system level simulation to quantify the stress on the power semiconductors in a PV central inverters in various regions of the world. Further topics are the investigation of improved control concepts for the cooling system of PV central inverters and the monitoring of IGBT temperatures during converter operation.
