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Metal Induced Crystallization And Polysilicon Thin Film Transistors
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Book Synopsis Metal Induced Crystallization and Polysilicon Thin Film Transistors by : Bo Zhang
Download or read book Metal Induced Crystallization and Polysilicon Thin Film Transistors written by Bo Zhang and published by . This book was released on 2009-05-01 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays,active-matrix addressing using a-Si TFTs is dominating in the flat panel display markets. However, low temperature polysilicon has been proposed and considered to be a promising alternative technology. Metal induced crystallization (MIe is one of the methods to obtain high quality polysilicon films at low temperatures. A few technologies are presented in this monograph, which improve the quality of MIC polysilicon film and hence the performance of TFTs built on. Amelioration of MIC processes has been made to produce high performance polysilicon TFTs using solution based MIC (SMIe and defined-grain MIC (DG-MIe methods. Novel post-annealing technologies are also introduced to reduce the micro-defects in MIC polysilicon film and hence to achieve better performance. These technologies include YAG laser post-annealing and flash lamp post-annealing. Particularly, it is the first time to report the application of flash lamp annealing technology in the fabrication of low temperature polysilicon and TFTs.
Book Synopsis Modeling of Polysilicon Thin-film Transistors Formed by Grain Enhancement Technology-metal-induced Lateral Crystallization by : Chun Fai Cheng
Download or read book Modeling of Polysilicon Thin-film Transistors Formed by Grain Enhancement Technology-metal-induced Lateral Crystallization written by Chun Fai Cheng and published by . This book was released on 2004 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-Induced Crystallization by : Zumin Wang
Download or read book Metal-Induced Crystallization written by Zumin Wang and published by CRC Press. This book was released on 2015-01-28 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon
Book Synopsis Low Temperature Metal Induced Laterally Crystallized Polysilicon Thin Film Transistors for AMLCD Applications by : Gururaj A. Bhat
Download or read book Low Temperature Metal Induced Laterally Crystallized Polysilicon Thin Film Transistors for AMLCD Applications written by Gururaj A. Bhat and published by . This book was released on 1998 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thin Film Transistors: Polycrystalline silicon thin film transistors by : Yue Kuo
Download or read book Thin Film Transistors: Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Book Synopsis Investigation on Solid-phase Crystallization Techniques for Low Temperature Polysilicon Thin-film Transistors by : Qinglong Li
Download or read book Investigation on Solid-phase Crystallization Techniques for Low Temperature Polysilicon Thin-film Transistors written by Qinglong Li and published by . This book was released on 2013 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Low-temperature polysilicon (LTPS) has emerged as a dominant technology for high performance thin-film transistors (TFTs) used in mobile liquid crystal display (LCD) and organic light emitting diode (OLED) display products. As users demand higher quality in flat panel displays with a larger viewing area and finer resolution, the improvement in carrier mobility of LTPS compared to that of hydrogenated amorphous silicon (a-Si:H) makes it an excellent candidate as a channel material for TFT. Advantages include improvements in switching speed and the ability to incorporate peripheral scan and data driver circuitry onto a low cost display substrate. Solid-phase crystallization (SPC) is a useful technique to realize polysilicon films due to its simplicity and low cost compared to excimer-laser annealing (ELA),which has many challenges in back-plane manufacturing on large glass panels.Metal induced crystallization (MIC) results in polycrystalline silicon films with grain size as large as tens of microns. Flash-lamp annealing (FLA) is a new and novel method to crystallize a-Si films at high temperature without distortion of the glass substrate by performing an annealing within millisecond range.This work investigates SPC, MIC and FLA techniques to realize LTPS films. In addition, TFTs were designed and fabricated to characterize the device quality of the semiconductor layer, and to compare the performance of different structural arrangements."--Abstract.
Book Synopsis Kinetics of Silicide-induced Crystallization of Polycrystalline Thin Film Transistors Fabricated from Amorphous Chemical Vapor Deposition Silicon by : Hansuk Kim
Download or read book Kinetics of Silicide-induced Crystallization of Polycrystalline Thin Film Transistors Fabricated from Amorphous Chemical Vapor Deposition Silicon written by Hansuk Kim and published by . This book was released on 1999 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thin Film Transistors: Polycrystalline silicon thin film transistors by : Yue Kuo
Download or read book Thin Film Transistors: Polycrystalline silicon thin film transistors written by Yue Kuo and published by Kluwer Academic Pub. This book was released on 2004 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Book Synopsis Introduction to Thin Film Transistors by : S.D. Brotherton
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Book Synopsis Thin film transistors. 1. Amorphous silicon thin film transistors by : Yue Kuo
Download or read book Thin film transistors. 1. Amorphous silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Book Synopsis Thin Film Transistor Technologies VI by : Yue Kuo
Download or read book Thin Film Transistor Technologies VI written by Yue Kuo and published by The Electrochemical Society. This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Alternative Energy and Shale Gas Encyclopedia by : Jay H. Lehr
Download or read book Alternative Energy and Shale Gas Encyclopedia written by Jay H. Lehr and published by John Wiley & Sons. This book was released on 2016-04-25 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive depository of all information relating to the scientific and technological aspects of Shale Gas and Alternative Energy Conveniently arranged by energy type including Shale Gas, Wind, Geothermal, Solar, and Hydropower Perfect first-stop reference for any scientist, engineer, or student looking for practical and applied energy information Emphasizes practical applications of existing technologies, from design and maintenance, to operating and troubleshooting of energy systems and equipment Features concise yet complete entries, making it easy for users to find the required information quickly, without the need to search through long articles
Book Synopsis Semiconductor-On-Insulator Materials for Nanoelectronics Applications by : Alexei Nazarov
Download or read book Semiconductor-On-Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Book Synopsis The Physics of Semiconductors by : Marius Grundmann
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer. This book was released on 2015-12-24 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the third edition several topics are extended and treated in more depth including surfaces, disordered materials, amorphous semiconductors, polarons, thermopower and noise. More than 1800 references guide the reader to historic and current literature including original and review papers and books.
Book Synopsis Investigation of Metal-induced Crystallization of Silicon Thin Films and Silicon Based Nanostructures by : Kai Wang
Download or read book Investigation of Metal-induced Crystallization of Silicon Thin Films and Silicon Based Nanostructures written by Kai Wang and published by . This book was released on 2012 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ULSI Process Integration by : Cor L. Claeys
Download or read book ULSI Process Integration written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Morphological and Electrical Variance in Polysilicon Thin Film Transistors Crystallized by Flash Lamp Annealing by : Glenn Packard
Download or read book Morphological and Electrical Variance in Polysilicon Thin Film Transistors Crystallized by Flash Lamp Annealing written by Glenn Packard and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This work is a wide-reaching study of the factors that impact the in-situ crystallization of thin films of amorphous silicon into low-temperature polycrystalline silicon (LTPS) by flash lamp annealing (FLA) on glass substrates, which is used to develop thin film transistors (TFTs) with an eye towards display applications. The body of research surrounding FLA LTPS is thus advanced by identifying several challenges towards industrial integration and exploring solutions involving device configuration, novel methods of dopant introduction and activation, and novel TFT material systems. It is unlikely that FLA will ever produce LTPS superior to the laser-annealing techniques currently dominating the market, but its significant improvements in throughput and roll-to-roll compatibility make it an attractive complementary technology. In this work, existing FLA LTPS TFT research is expanded into complementary metal-oxide-semiconductor (CMOS) logic to take advantage of the n- and p- channel compatibility of LTPS over competing amorphous oxide technology. A processing alternative is developed for scaling these devices down to current dimensions of liquid crystal display (LCD) transistor backplanes and then further improved by exploring a silicon ion self-implant to preamorphize the polycrystalline lattice structure, allowing enhanced dopant activation at temperatures compatible with thermally-fragile substrates. This method is also shown to be compatible with a self-aligned device configuration for ease of processing and reduced parasitic capacitance. Additionally, a new strategy for producing bottom-gate LTPS devices (a consistent challenge for laser-annealed LTPS) is presented by incorporating a transparent conductive oxide as a gate structure. The increased thermal mass provided by the bottom gate is harnessed to improve the impact of channel crystallization at lower pulse intensity, producing devices with extremely high channel mobility at low drain voltage. Monolayer Doping (MLD) is demonstrated to be compatible with FLA LTPS, utilizing a simultaneous anneal to both crystallize amorphous silicon and activate selectively self-assembled MLD-adhered dopants. MLD phosphorus n-channel TFTs are presented with activation on par with that of ultra-shallow MLD junctions on bulk silicon. Further, Gallium MLD is demonstrated for the first time, successfully producing p-channel TFTs with FLA. The material system of FLA-crystallized silicon on chromium, already well established in the micrometer-thick film range for PV applications, is given an in-depth investigation in the nanometer thin film range for TFT applications. A unique set of crystallization patterns and texture on the nanometer scale is revealed and characterized to determine the extent, cause, and impact of chromium redistribution in this material, which is also explored as a predictable and edge-directed morphology of FLA LTPS for a wide variety of device configurations. Finally, the individual advancements in this work are explored in many combinations in a wide multi-process study to determine their efficacy as techniques for producing FLA LTPS TFTs. Using this broad information, the field of flash-lamp crystallized TFTs is advanced and several challenges are more specifically identified as a foundation for future research."--Abstract.
