MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

Download MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (94 download)

DOWNLOAD NOW!


Book Synopsis MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics by :

Download or read book MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

Novel Compound Semiconductor Nanowires

Download Novel Compound Semiconductor Nanowires PDF Online Free

Author :
Publisher : CRC Press
ISBN 13 : 9814745774
Total Pages : 549 pages
Book Rating : 4.8/5 (147 download)

DOWNLOAD NOW!


Book Synopsis Novel Compound Semiconductor Nanowires by : Fumitaro Ishikawa

Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics

Download Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.:/5 (319 download)

DOWNLOAD NOW!


Book Synopsis Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics by : Xuying Dong

Download or read book Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics written by Xuying Dong and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanomagnetism and Spintronics

Download Nanomagnetism and Spintronics PDF Online Free

Author :
Publisher : Elsevier Inc. Chapters
ISBN 13 : 0128086815
Total Pages : 56 pages
Book Rating : 4.1/5 (28 download)

DOWNLOAD NOW!


Book Synopsis Nanomagnetism and Spintronics by : Fumihiro Matsukura

Download or read book Nanomagnetism and Spintronics written by Fumihiro Matsukura and published by Elsevier Inc. Chapters. This book was released on 2013-10-07 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: III–V compound semiconductors such as GaAs and InAs alloyed with Mn exhibit ferromagnetism. The magnetic, electrical, and optical properties of ferromagnetic III–V semiconductors are first compiled along with the way to prepare the epitaxial films and the effect of postgrowth annealing. Theories available to explain the magnetism in these alloys are then presented. Because the ferromagnetic semiconductors are compatible with epitaxial III–V heterostructures, a number of device structures have been examined and shown to reveal a wide variety of phenomena that either cannot be realized or are very difficult to observe in ferromagnetic metal structures. The unique properties revealed by ferromagnetic semiconductor structures, ranging from reversible electric field control of ferromagnetic phase transition to generating velocity versus current-density curves of current-induced domain wall motion, are then reviewed. The prospect of realizing high-transition temperature is discussed in the last section.

In-situ Surface, Chemical, and Electrical Characterization of the Interfaces Between Ferromagnetic Metals and Compound Semiconductors Grown by Molecular Beam Epitaxy

Download In-situ Surface, Chemical, and Electrical Characterization of the Interfaces Between Ferromagnetic Metals and Compound Semiconductors Grown by Molecular Beam Epitaxy PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (319 download)

DOWNLOAD NOW!


Book Synopsis In-situ Surface, Chemical, and Electrical Characterization of the Interfaces Between Ferromagnetic Metals and Compound Semiconductors Grown by Molecular Beam Epitaxy by : Brian Douglas Schultz

Download or read book In-situ Surface, Chemical, and Electrical Characterization of the Interfaces Between Ferromagnetic Metals and Compound Semiconductors Grown by Molecular Beam Epitaxy written by Brian Douglas Schultz and published by . This book was released on 2005 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Europium Monoxide

Download Europium Monoxide PDF Online Free

Author :
Publisher : Springer
ISBN 13 : 3319767410
Total Pages : 195 pages
Book Rating : 4.3/5 (197 download)

DOWNLOAD NOW!


Book Synopsis Europium Monoxide by : Arnold S. Borukhovich

Download or read book Europium Monoxide written by Arnold S. Borukhovich and published by Springer. This book was released on 2018-03-22 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the physical characteristics and possible device applications of europium monoxide as well as materials based on it. It reveals the suitability of this material for device applications in super- and semiconductor spin electronics. Ferromagnetic semiconductors like europium monoxide have contributed to a fascinating research field in condensed matter physics. In the book are presented the electronic and magnetic properties and thermal and resonance parameters of this material, its peculiarities in external fields as a function of non-stoichiometry, doping level, both in single-crystal and thin-film states. Particular attention is paid to the possibility to use this monoxide or its solid solutions (composites) unconventionally for creating spin electronics structures which work at room temperature conditions. This book appeals to researchers, graduate students and professionals engaged in the development of semiconductor spin electronics and computer devices, technologists and theoretical physicists. It is important for the calculation, development and creation of spin memory devices for a quantum computer.

Comprehensive Semiconductor Science and Technology

Download Comprehensive Semiconductor Science and Technology PDF Online Free

Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

DOWNLOAD NOW!


Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Hybrid Epitaxial Structures for Spintronics

Download Hybrid Epitaxial Structures for Spintronics PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 11 pages
Book Rating : 4.:/5 (742 download)

DOWNLOAD NOW!


Book Synopsis Hybrid Epitaxial Structures for Spintronics by : J. De Boeck

Download or read book Hybrid Epitaxial Structures for Spintronics written by J. De Boeck and published by . This book was released on 2002 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular beam epitaxy (MBE) has been used very successfully over the past 10 years to produce the most interesting spintronic heterostructures. This paper illustrates the strength of MBE in realizing materials combinations that can lead to efficient spin-injection. The paper is not an exhaustive description of all possible materials combinations, but a review of some important aspects of spin-source fabrication. In line with today's emphasis on demonstrating the spin-injection process in III-V (electroluminescent) semiconductor devices, the paper will focus on Gallium Arsenide-based (GaAs-based) epitaxial heterostructures. The first part of the paper describes the epitaxy of metallic ferromagnetic elements and alloys on GaAs. The authors review the results of initial experiments on Iron (Fe) and Cobalt (Co) epitaxy, since these materials are in the picture for Schottky barrier spin-injection devices today. Further, a brief description of Manganese-based (Mn) alloys is presented, justified by the wealth of possible Mn-III or Mn-V alloys that can be epitaxially grown on GaAs with various properties. This section is followed by a discussion of Gallium Manganese Arsenide (GaMnAs) as a ferromagnetic semiconductor and a summary of the results obtained recently on the epitaxial growth of Nickel Manganese Antimony (NiMnSb) on GaAs, a half-metallic magnetic alloy that has the potential to serve as a spin-source with 100% spin-polarization. The authors also briefly discuss some results on the realization of heterostructures, including two magnetic layers spaced by a semiconductor or vice versa. A very appealing class of materials for spintronics is that of magnetic semiconductors, illustrated in this paper by (Aluminum, Gallium) Manganese Arsenides (Al, Ga)MnAs. A concluding section deals with the contact strategies (ohmic, Schottky barrier, or tunnel barrier) for spin-injection reports in which the materials combinations play an important role. (9 figures, 94 refs.).

Molecular Beam Epitaxy

Download Molecular Beam Epitaxy PDF Online Free

Author :
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 788 pages
Book Rating : 4.1/5 (281 download)

DOWNLOAD NOW!


Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Nanomagnetism and Spintronics

Download Nanomagnetism and Spintronics PDF Online Free

Author :
Publisher : Elsevier
ISBN 13 : 0444632778
Total Pages : 373 pages
Book Rating : 4.4/5 (446 download)

DOWNLOAD NOW!


Book Synopsis Nanomagnetism and Spintronics by : Teruya Shinjo

Download or read book Nanomagnetism and Spintronics written by Teruya Shinjo and published by Elsevier. This book was released on 2013-10-07 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition, cover the most recent research in areas of spin-current generation, spin-calorimetric effect, voltage effects on magnetic properties, spin-injection phenomena, giant magnetoresistance (GMR), and tunnel magnetoresistance (TMR). Spintronics is a cutting-edge area in the field of magnetism that studies the interplay of magnetism and transport phenomena, demonstrating how electrons not only have charge but also spin. This second edition provides the background to understand this novel physical phenomenon and focuses on the most recent developments and research relating to spintronics. This exciting new edition is an essential resource for graduate students, researchers, and professionals in industry who want to understand the concepts of spintronics, and keep up with recent research, all in one volume. Provides a concise, thorough evaluation of current research Surveys the important findings up to 2012 Examines the future of devices and the importance of spin current

Semiconductor Spintronics and Quantum Computation

Download Semiconductor Spintronics and Quantum Computation PDF Online Free

Author :
Publisher : Springer Science & Business Media
ISBN 13 : 366205003X
Total Pages : 321 pages
Book Rating : 4.6/5 (62 download)

DOWNLOAD NOW!


Book Synopsis Semiconductor Spintronics and Quantum Computation by : D.D. Awschalom

Download or read book Semiconductor Spintronics and Quantum Computation written by D.D. Awschalom and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.

Compound Semiconductors 2004

Download Compound Semiconductors 2004 PDF Online Free

Author :
Publisher : CRC Press
ISBN 13 : 1482269228
Total Pages : 531 pages
Book Rating : 4.4/5 (822 download)

DOWNLOAD NOW!


Book Synopsis Compound Semiconductors 2004 by : J.C. Woo

Download or read book Compound Semiconductors 2004 written by J.C. Woo and published by CRC Press. This book was released on 2005-04-01 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for t

First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors

Download First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors PDF Online Free

Author :
Publisher : Nova Science Publishers
ISBN 13 : 9781536140774
Total Pages : 177 pages
Book Rating : 4.1/5 (47 download)

DOWNLOAD NOW!


Book Synopsis First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors by : Omar Mounkachi

Download or read book First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors written by Omar Mounkachi and published by Nova Science Publishers. This book was released on 2018-10 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent discoveries have given rise to a new class of electronics known as "spin electronics or spintronics," which uses the electron spin rather than its charge to create polarized currents. Spintronics is currently experiencing an extraordinary development with the manufacture of nanoscale devices based on ferromagnetic materials and semiconductors. Their applications are numerous, ranging from recording, electronics, and optoelectronics to quantum information. Spintronics is a new generation of electronics that has brought and continues to bring a lot of progress to information storage; this is due to the discovery of new materials with new functionalities and multiple applications. The discovery of giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg (receiver of the Nobel Prize in Physics in 2007) is considered a starting point of spintronics. GMR is based on the variation of the electric current in the presence of a magnetic field. The spintronics has made important contributions to the miniaturization desired for electronics; it uses nanometric components for processing and storing information. However, the limits of miniaturization on a nanometric scale are known, and it is imperative to develop new ways and new materials to exceed those limits. The most desired properties for these materials are high spin polarization, modular magnetic properties by an electric field and a long lifetime of the spin polarization. Among the new promising materials, we cite the following: Diluted magnetic semiconductors, which give new magnetic properties of conventional semiconductors, functional oxides (including the semi-metals and multiferroic metals) and organic semiconductors. The main theoretical challenge in this area is to understand how the macroscopic magnetic behavior observed results from interactions of a large number of degrees of microscopic freedom. In these systems the disorder is an essential parameter of magnetic phenomena, and due to random locations of impurity atoms it can lead to a total physical difference from the observed absence. There has been considerable recent advances in the design of these materials as diluted magnetic semiconductors (DMS, or diluted magnetic semiconductors), and a number of semiconductors were investigated as II-VI group and III-V group doped compounds, with transition metals substituting their original cations. There are several different theoretical approaches to study these magnetic materials. The ab-initio approach starts from the Schrödinger equation to simulate a given material. Such an approach is essential to determine the parameters and microscopic properties of such a system. In this book, the authors analyzed the electronic structure of magnetic semiconductors diluted in the case of ZnO, GaN, SnO2, TiO2, MgH2, EuO and EuN doped RENs (RE=GdN, DyN and HoN). The authors focused on magnetic, optical and exchange mechanisms which control the ferromagnetism in these systems. The purpose of this book is to propose some ideas to answer the most important question in material science for semiconductor spintronics, primarily considering how room-temperature ferromagnetism in DMS can be realized. Additionally, the correlation between first principle and experimental design to see how properties of yet-to-be-synthesized materials can be predicted is discussed.

Growth of Novel Wide Bandgap Room Temperature Ferromagnetic Semiconductor for Spintronic Applications

Download Growth of Novel Wide Bandgap Room Temperature Ferromagnetic Semiconductor for Spintronic Applications PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (668 download)

DOWNLOAD NOW!


Book Synopsis Growth of Novel Wide Bandgap Room Temperature Ferromagnetic Semiconductor for Spintronic Applications by : Shalini Gupta

Download or read book Growth of Novel Wide Bandgap Room Temperature Ferromagnetic Semiconductor for Spintronic Applications written by Shalini Gupta and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed that these GaTMN films were semi-insulating, making carrier mediated exchange unlikely. Hysteresis curves were obtained for all the GaTMN films, and by analyzing the effect of n- and p-dopants on the magnetic properties of these films it was determined that the magnetization is due to magnetic clusters. These findings are supported by the investigation of the effect of TM dopants in GaN nanostructures which reveal that TMs enhance nucleation resulting in superparamagnetic nanostructures. Additionally, this work presents the first report on the development of GaGdN by MOCVD providing an alternate route to developing a RT DMS. Room temperature magnetization results revealed that the magnetization strength increases with Gd concentration and can be enhanced by n- and p-doping, with holes being more efficient at stabilizing the ferromagnetic signal. The GaGdN films obtained in this work are single-phase, unstrained, and conductive making them suitable for the development of multifunctional devices that integrate electrical, optical, and magnetic properties.

Handbook of Magnetic Materials

Download Handbook of Magnetic Materials PDF Online Free

Author :
Publisher : Gulf Professional Publishing
ISBN 13 : 9780444511447
Total Pages : 446 pages
Book Rating : 4.5/5 (114 download)

DOWNLOAD NOW!


Book Synopsis Handbook of Magnetic Materials by : K.H.J. Buschow

Download or read book Handbook of Magnetic Materials written by K.H.J. Buschow and published by Gulf Professional Publishing. This book was released on 2002-09-20 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnetoelectronics is a novel and rapidly developing field. This new field is frequently referred to as spin-electronics or spintronics. It includes spin-utilizing devices that need neither a magnetic field nor magnetic materials. In semiconductor devices, the spin of the carriers has only played a very modest role so far because well established semiconductor devices are non-magnetic and show only negligible effects of spin. Nanoscale thin films and multilayers, nanocrystalline magnetic materials, granular films, and amorphous alloys have attracted much attention in the last few decades, in the field of basic research as well as in the broader field of materials science. Such heterogeneous materials display uncommon magnetic properties that virtually do no occur in bulk materials. This is true, in particular with respect to surface (interface) magnetic anisotropy and surface (interface) magnetostrictive strains and giant magnetoresistance. The local atomic arrangement at the interface differs strongly from that in the bulk. The local symmetry is lowered, so that some interactions are changed or are missing altogether. The interface atoms may envisaged as forming a new phase and some properties characteristic of this phase may become predominant for the entire system. This becomes particularly evident in the case of interfacial magnetostriction which can lead to a decrease (almost to zero) or to an increase(over the bulk value) of the resulting magnetostriction of the nanoscale system. There are various forms of the interplay of magnetism and superconductivity, which can be divided into competition and coexistence phenomena. For instance, a strong competition is found in high-Tc cuprates. In these materials, depending on the doping rate, either Neel-type antiferromagnetism moments (e.g. from 4f-elements) with superconductivity is known to occur in systems where the concentration of these moments is sufficiently small or where they are antiferromagnetically ordered and only weakly coupled to the conduction electrons. During the years, intermetallic gadolinium compounds have adopted a special position in the study of 4f electron magnetism. The reason for this is the fact that the gadolinium moment consists only of a pure spin moment, orbital contributions to the moment being absent. As a consequence, gadolinium compounds have been regarded as ideal test benches for studying exchange interactions, free from complications due to crystal effects. Volume 14 of the Handbook of Magnetic Materials, as the preceding volumes, has a dual purpose. As a textbook it is intended to be of assistance to those who wish to be introduced to a given topic in the field of magnetism without the need to read the vast amount of literature published. As a work of reference it is intended for scientists active in magnetism research. To this dual purpose, volume 14 of the Handbook is composed of topical review articles written by leading authorities. In each of these articles an extensive description is given in graphical as well as tabular form, much emphasis being placed on the discussion of the experimental material in the framework of physics, chemistry and material science.

Diluted Magnetic (semimagnetic) Semiconductors

Download Diluted Magnetic (semimagnetic) Semiconductors PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 350 pages
Book Rating : 4.3/5 (91 download)

DOWNLOAD NOW!


Book Synopsis Diluted Magnetic (semimagnetic) Semiconductors by : Roshan Lal Aggarwal

Download or read book Diluted Magnetic (semimagnetic) Semiconductors written by Roshan Lal Aggarwal and published by . This book was released on 1987 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the IEEE ... International Symposium on Compound Semiconductors

Download Proceedings of the IEEE ... International Symposium on Compound Semiconductors PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 264 pages
Book Rating : 4.3/5 (91 download)

DOWNLOAD NOW!


Book Synopsis Proceedings of the IEEE ... International Symposium on Compound Semiconductors by :

Download or read book Proceedings of the IEEE ... International Symposium on Compound Semiconductors written by and published by . This book was released on 2003 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: