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Author : Andrea Pons
Publisher :
ISBN 13 :
Total Pages : 210 pages
Book Rating : 4.:/5 (696 download)
Download or read book Materials and Electrical Characterization of Sputtered Tantalum Oxide Thin Films written by Andrea Pons and published by . This book was released on 2006 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fang-Xing Jiang
Publisher :
ISBN 13 :
Total Pages : 222 pages
Book Rating : 4.:/5 (35 download)
Download or read book Tantalum Oxide Thin Films for Microelectronic Applications written by Fang-Xing Jiang and published by . This book was released on 1995 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: "There is a critical demand for new dielectric films having higher dielectric constants, higher dielectric strengths and lower leakage currents for applications such as charge storage capacitors for DRAMs in ULSI and low-inductance decoupling capacitors for the control of simultaneous switching noise (SSN) in high-speed switching ULSI chips. Among these candidates for insulators, tantalum pentoxide has received considerable attention. As earlier as in the 1960's, tantalum oxide has been used as the dielectric in discrete capacitors. Recently, several papers have been reported on the electrical properties of Ta205 films grown by various techniques. It has been reported that the electrical properties, e.g. dielectric constant, leakage current, dielectric strength as well as the nature of the Ta2Os/Si interface, are extremely sensitive to the annealing conditions. At the present time, however, the role of the as-deposited Ta2Os/Si interface is not fully understood. In the present study, a two-step process, consisting two separate depositions and annealing, has been developed to improve the physical and electrical characteristics of reactivity sputtered Ta2Os films. The reactive ion etching (RE) selectivity of Ta2Os to Si, Si02 and Ta in CHF3, CF4 and SF6 with fractions of 02, H2 and Ar has been investigated for IC process applications. The tantalum oxide films were deposited on Si wafers by reactive DC sputtering. The films were characterized for thickness and refractive index using an ellipsometer and their phase was identified using an X-ray diffractometer. The annealing effect on Ta2Oj in oxygen ambient at 800C shows that the Ta205 films crystallize into an orthorhombic phase, condensed with a decrease of thickness and an increase of refractive index. Various capacitor configurations, such as MTM (Al/Ta205/Al) and MIS (Al/Ta20$/p-Si, Al/Ta205/n-Si and Al/Ta2Os/n+-Si), were fabricated to study the nature of Ta2Os/Si interface and the I-V and C-V characteristics. The as-deposited Ta2Os film on p-type Si substrate can sustain an electric field of 3 MV/cm at a current density of 1 u.A/cm2 in the accumulation mode, which is an order higher than that on n-type substrate. The value of apparent dielectric constant of as-deposited Ta2Os film estimated from the Al/Ta205/Al capacitor is 16, however, the value varies from 6 to 10 in MIS capacitors. This shows a evidence strongly that there is a substrate sensitivity for tantalum oxide films. As a result of the two-step process, the dielectric constant of Al/Ta2Os/n+-Si capacitor increases to 21. This value is considerably close to 24 for bulk Ta2Oj. To investigate the RIE selectivity of Ta2Os to Ta, Si and Si02, the Ta2Os film was deposited onto a wafer with three other films, DC sputtered Ta, LPCVD polysilicon, and thermally grown Si02. It is revealed that in SF6 with various fractions of 20% hydrogen or argon, the Ta2Os film shows extremely low etch rate as compared with Si, Ta and Si02, and in CF4 with various fractions of 30% hydrogen or oxygen, the Ta205 film shows a lower etch rate. However, in CHF3 the etch rates of Si and Ta2Os are comparable. The absorption spectrum of deposited tantalum oxide films was also measured. This material can be used for phase shift and attenuation masks, sunglasses and light filters. The as-deposited tantalum oxide films show a high absorbency peak at 217 nm and an additional small peak. at 416 nm with two subpeaks at 286 and 510 nm using spectrophotometer. The high peak becomes broadened and the long wavelength side of the small peak is shifted to short wavelength through annealing. A model of free volume like defect and oxygen vacancy like defect is proposed to explain the change of the absorbency spectrum."--Abstract.
Author : Gerald Thomas Kraus
Publisher :
ISBN 13 :
Total Pages : 348 pages
Book Rating : 4.E/5 ( download)
Download or read book Synthesis and Characterization of Sol-gel Derived Tantalum Oxide, Tantalum Nitride, and Nickel-alumina Thin Films written by Gerald Thomas Kraus and published by . This book was released on 1997 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William J. Meder
Publisher :
ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (26 download)
Download or read book Physical and Electrical Properties of Cathodic Sputtered Tantalum Thin Films written by William J. Meder and published by . This book was released on 1965 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yasin I. Al-Titi
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (531 download)
Download or read book Physical Characterization of Tantalum Oxide Thin Films Deposited by a Mirrortron Sputtering System (MTS) written by Yasin I. Al-Titi and published by . This book was released on 2003 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jaydeep Sarkar
Publisher : William Andrew
ISBN 13 : 0815519877
Total Pages : 614 pages
Book Rating : 4.8/5 (155 download)
Download or read book Sputtering Materials for VLSI and Thin Film Devices written by Jaydeep Sarkar and published by William Andrew. This book was released on 2010-12-13 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes. Two unique chapters of this book deal with productivity and troubleshooting issues. The content of the book has been divided into two sections: (a) the first section (Chapter 1 to Chapter 3) has been prepared for the readers from a range of disciplines (e.g. electrical, chemical, chemistry, physics) trying to get an insight into use of sputtered films in various devices (e.g. semiconductor, display, photovoltaic, data storage), basic of sputtering and performance of sputtering target in relation to productivity, and (b) the second section (Chapter 4 to Chapter 8) has been prepared for readers who already have background knowledge of sputter deposition of thin films, materials science principles and interested in the details of sputtering target manufacturing methods, sputtering behavior and thin film properties specific to semiconductor, liquid crystal display, photovoltaic and magnetic data storage applications. In Chapters 5 to 8, a general structure has been used, i.e. a description of the applications of sputtered thin films, sputtering target manufacturing methods (including flow charts), sputtering behavior of targets (e.g. current - voltage relationship, deposition rate) and thin film properties (e.g. microstructure, stresses, electrical properties, in-film particles). While discussing these topics, attempts have been made to include examples from the actual commercial processes to highlight the increased complexity of the commercial processes with the growth of advanced technologies. In addition to personnel working in industry setting, university researchers with advanced knowledge of sputtering would also find discussion of such topics (e.g. attributes of target design, chamber design, target microstructure, sputter surface characteristics, various troubleshooting issues) useful. . Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirements Practical information on technology trends, role of sputtering and major OEMs Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc. Practical case-studies on target performance and troubleshooting Essential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry
Author : S. V. Jagadeesh Chandra
Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783843394222
Total Pages : 188 pages
Book Rating : 4.3/5 (942 download)
Download or read book Investigations on Magnetron Sputtered Tantalum Oxide Films written by S. V. Jagadeesh Chandra and published by LAP Lambert Academic Publishing. This book was released on 2011-01 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.
Author :
Publisher :
ISBN 13 :
Total Pages : 722 pages
Book Rating : 4.0/5 ( download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-02 with total page 722 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jaya Murli Purswani
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (564 download)
Download or read book The Effects of Annealing Temperature and Deposition Parameters on the Mechanical and Electrical Properties of Tantalum Oxide Thin Films written by Jaya Murli Purswani and published by . This book was released on 2004 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hari Singh Nalwa
Publisher : Elsevier
ISBN 13 : 0080533825
Total Pages : 1915 pages
Book Rating : 4.0/5 (85 download)
Download or read book Handbook of Surfaces and Interfaces of Materials, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Author : Gianfranco Pacchioni
Publisher : Springer Science & Business Media
ISBN 13 : 9401009449
Total Pages : 619 pages
Book Rating : 4.4/5 (1 download)
Download or read book Defects in SiO2 and Related Dielectrics: Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author : Anna Zaman
Publisher :
ISBN 13 :
Total Pages : 78 pages
Book Rating : 4.:/5 (892 download)
Download or read book Characterization of Tantalum Nitride Thin Films Synthesized by Magnetron Sputtering written by Anna Zaman and published by . This book was released on 2014 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tantalum Nitride is chemically inert, oxidation resistant and hard. TaN finds applications as a protective coating due to its excellent wear properties. It has become a very promising diffusion barrier material in Cu interconnect technology in microelectronics. TaN has not been analyzed as much as other transition metal nitrides like the TiN system because TaN exhibits various stable and metastable phases. The emergence of these phases and the different physical, chemical and mechanical properties depend on the growth technique and deposition conditions. TaN thin films were deposited using magnetron PVD sputtering in the SaNEL lab. The aim of this study was to identify the effect of processing parameters like N2/Ar ratio, substrate bias and temperature on the emergence of the different phases present in TaN thin films and the effect of deposition conditions on the mechanical properties of these films. The phases present in the films, deposited at various conditions were explored via low angle X-Ray Diffraction (XRD), hardness response by using Nanoindentation and tribological testing out to assess their frictional and wear behavior. It was observed that at high percentage of Nitrogen in the gas mixture (10% - 25%) the main phase present was FCC TaN and as the Nitrogen content was decreased a mixture of phases was present in these films. The hardness of the films increases as we decrease the Nitrogen content, yielding a film with a hardness of 37.1 GPa at 3% N2 in the gas mixture with a substrate bias voltage of -100 V.
Author :
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ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ana Paula Pinto Correia
Publisher : Springer
ISBN 13 : 331927192X
Total Pages : 86 pages
Book Rating : 4.3/5 (192 download)
Download or read book A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs written by Ana Paula Pinto Correia and published by Springer. This book was released on 2015-12-29 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: This books discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates.
Author :
Publisher :
ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. W. Jones
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)
Download or read book Electrical Conduction in Tantalum Oxide Thin Films written by M. W. Jones and published by . This book was released on 1974 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mark J. Lododa
Publisher : The Electrochemical Society
ISBN 13 : 9781566772709
Total Pages : 262 pages
Book Rating : 4.7/5 (727 download)
Download or read book Low and High Dielectric Constant Materials written by Mark J. Lododa and published by The Electrochemical Society. This book was released on 2000 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contains papers from a May 2000 symposium, representing the state of the art in areas of dielectric materials science and process integration. Papers are arranged in sections on low and high dielectric constant materials, covering topics such as ammonia plasma passivation effects on properties of post-CMP low-k HSQ, characterization of ashing effects on low-k dielectric films, and electron beam curing of thin film polymer dielectrics. Other subjects include characterization of high-k dielectrics using the non-contact surface charge profiler method, and processing effects and electrical evaluation of ZrO2 formed by RTP oxidation of Zr. Loboda is affiliated with Dow Corning Corporation. c. Book News Inc.
