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Investigation Of Metal Insulator Metal Mim And Nanolaminate Barrier Miim Tunnel Devices Fabricated Via Atomic Layer Deposition
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Book Synopsis Investigation of Metal-insulator-metal (MIM) and Nanolaminate Barrier MIIM Tunnel Devices Fabricated Via Atomic Layer Deposition by : Nasir Alimardani
Download or read book Investigation of Metal-insulator-metal (MIM) and Nanolaminate Barrier MIIM Tunnel Devices Fabricated Via Atomic Layer Deposition written by Nasir Alimardani and published by . This book was released on 2013 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies. The objective of this work is to develop MIM tunnel devices with improved electrical properties including I-V asymmetry and non-linearity. The standard approach to achieving asymmetric operation in MIM devices is through the use of electrodes with different metal work functions. This approach is investigated using a variety of thin film dielectrics deposited by atomic layer deposition (ALD). To assess suitability for high speed operation, the physical mechanisms of electron transport in each dielectric are investigated. Next, as an alternative approach to achieving asymmetric and non-linear operation, pairs of dielectrics with different band-gaps and band-offsets are combined to form asymmetric tunnel barrier metal-insulator-insulator-metal (MIIM) diodes. MIIM diodes are fabricated using ALD to form nanolaminate pairs of Al2O3, HfO2, ZrO2, and Ta2O5 between asymmetric electrodes. It is found that the performance of the MIIM diodes is sensitive to the choice, relative thickness, and arrangement of the individual dielectric layers. It is shown that asymmetric dual-dielectric tunnel barriers can overwhelm the influence of asymmetric electrodes and it is demonstrated that MIIM structures can be designed to provide improved asymmetry at low electric fields. Low field asymmetry improvements are shown to be due to a step tunneling phenomenon. Finally, the formation and influence of interfaces, as a means for providing insight into engineering of nanolaminate barrier tunnel devices is examined by comparing different atomically smooth bottom electrodes.
Book Synopsis Rectenna Solar Cells by : Garret Moddel
Download or read book Rectenna Solar Cells written by Garret Moddel and published by Springer Science & Business Media. This book was released on 2013-09-16 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by experts in their specialized fields.
Book Synopsis A Novel Way to Characterize Metal-insulator-metal Devices Via Nanoindentation by :
Download or read book A Novel Way to Characterize Metal-insulator-metal Devices Via Nanoindentation written by and published by . This book was released on 2011 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second "metal" (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.
Book Synopsis A Novel Way to Characterize Metal-insulator-metal Devices Via Nanoindentation by :
Download or read book A Novel Way to Characterize Metal-insulator-metal Devices Via Nanoindentation written by and published by . This book was released on 2011 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second "metal" (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.
Book Synopsis Barrier Layers and Metal Fill for Back End of Line Processing by : Steven Frank Wolf
Download or read book Barrier Layers and Metal Fill for Back End of Line Processing written by Steven Frank Wolf and published by . This book was released on 2019 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: As semiconductor devices continue to scale down below the 10 nm node, deposition of conformal, ultra-thin layers on high aspect ratio features becomes very challenging. As such, there is a need to deposit these materials with precise thickness and stoichiometry control via atomic layer deposition (ALD). Two main applications for ALD occur during BEOL microelectronic device processing after the MOSFET has been fabricated: barrier layer deposition and interconnect fill. These two applications will be the focus of this dissertation. ALD barrier layers are typically conductive nitrides, as such, this work will discuss growing several nitrides with ALD using N2H4 which has the main advantage of being able to grow at lower deposition temperatures. Commonly used barrier layers, titanium nitride (TiN) and tantalum nitride (TaN) have been extensively studied in devices because of their ideal thermal, mechanical, and electrical properties and ability to act as metal diffusion barriers, but typically require high deposition temperatures due to using less reactive NH3 as the N-containing precursor. Additionally, amorphous boron nitride was explored due to it having shorter bonds than TiN and TaN potentially making it a more-effective diffusion barrier that could be scaled down to films that must be less than 5 nm thick. These three materials in particular will be the focus in Chapters 2 and 3. Deposition of conductive interconnect metal in shrinking vias is another common problem facing the microelectronics industry. Traditionally, Al and then Cu have been used due to their high conductivities; however, in small critical dimensions, the resistivity of Cu increases due to electron scattering. Therefore, new materials and processing conditions are being explored that can offer lower resistivity for interconnect fill in these small critical dimension features. Chapter 4 of this dissertation will discuss two selective ALD processes (Co and Ru) that can allow for bottom-up fill of the interconnect metal. This would induce the formation and growth of larger grains, which are expected to decrease via and interconnect resistance. Reducing grain boundaries and decreasing surface roughness achieve this. For the analysis and characterization of ALD films, in situ XPS and STM along with ex situ AFM were mainly employed to characterize the chemical, electrical and topographical features of the deposited films and surfaces. To further study the conductivity of films, ex situ four-point probe measurements were performed.
Book Synopsis Fabrication and Packaging of Discontinuous MIM (Metal-Insulator-Metal) Film Arrays for Efficient MM Wave and IR Detection and Mixing by : Yu Chung
Download or read book Fabrication and Packaging of Discontinuous MIM (Metal-Insulator-Metal) Film Arrays for Efficient MM Wave and IR Detection and Mixing written by Yu Chung and published by . This book was released on 1987 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sputtering deposition of discontinuous Ni islands on a glass plate automatically produces a planar MOM diode array structure that will be mechanically stable when electrical leads are silver soldered to any two points of the coated plate. However, the efficiency in radiation reception and detection is totally controlled by the geometry of the diode array or the deposition process, which is mostly random due to deposition at very low sputtering powers. Such an array structure also has very poor antenna properties. Diode responsivity is found to be significantly improved by the incorporation of an etched-tip tungsten whisker, serving both as a long wire antenna for radiation reception and as a sharp tip electrical contact that concentrates the incident field and directs it to a selected nickel island group. This improvement in diode responsivity is offset by degradation in diode stability similar to that experienced by the MOM point contact diode, but to a lesser extent. The distinction between these two structures lies in the fact that the whisker serves mainly as an electrical contact in the discontinuous film diode, while it serves as the other electrode, sandwiching an ultrathin oxide layer, in the point contact vision. Stability can again be improved by deliberate hooking of an optimally etched tip without blunting. Some blunting is acceptable in the film diode at the expense of reduced diode responsivity.
Book Synopsis Quantum Transport by : Supriyo Datta
Download or read book Quantum Transport written by Supriyo Datta and published by Cambridge University Press. This book was released on 2005-06-16 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.
Book Synopsis Metal Amide Chemistry by : Michael Lappert
Download or read book Metal Amide Chemistry written by Michael Lappert and published by John Wiley & Sons. This book was released on 2008-12-23 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by internationally recognised leaders in the field, Metal Amide Chemistry is the authoritative survey of this important class of compounds, the first since Lappert and Power’s 1980 book “Metal and Metalloid Amides.” An introduction to the topic is followed by in-depth discussions of the amide compounds of: alkali metals alkaline earth metals zinc, cadmium and mercury the transition metals group 3 and lanthanide metals group 13 metals silicon and the group 14 metals group 15 metals the actinide metals Accompanied by a substantial bibliography, this is an essential guide for researchers and advanced students in academia and research working in synthetic organometallic, organic and inorganic chemistry, materials chemistry and catalysis.
Book Synopsis Charge-Trapping Non-Volatile Memories by : Panagiotis Dimitrakis
Download or read book Charge-Trapping Non-Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2017-02-14 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Book Synopsis Fuel Cells I by : Günther G. Scherer
Download or read book Fuel Cells I written by Günther G. Scherer and published by Springer Science & Business Media. This book was released on 2008-09-11 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: See table of contents
Book Synopsis Electrical Properties of Materials by : Laszlo Solymar
Download or read book Electrical Properties of Materials written by Laszlo Solymar and published by OUP Oxford. This book was released on 2009-10-22 with total page 461 pages. Available in PDF, EPUB and Kindle. Book excerpt: An informal and highly accessible writing style, a simple treatment of mathematics, and clear guide to applications, have made this book a classic text in electrical and electronic engineering. Students will find it both readable and comprehensive. The fundamental ideas relevant to the understanding of the electrical properties of materials are emphasized; in addition, topics are selected in order to explain the operation of devices having applications (or possible future applications) in engineering. The mathematics, kept deliberately to a minimum, is well within the grasp of a second-year student. This is achieved by choosing the simplest model that can display the essential properties of a phenomenom, and then examining the difference between the ideal and the actual behaviour. The whole text is designed as an undergraduate course. However most individual sections are self contained and can be used as background reading in graduate courses, and for interested persons who want to explore advances in microelectronics, lasers, nanotechnology and several other topics that impinge on modern life.
Book Synopsis Oxide Semiconductors: Volume 1633 by : Steve Durbin
Download or read book Oxide Semiconductors: Volume 1633 written by Steve Durbin and published by Materials Research Society. This book was released on 2014-07-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.
Book Synopsis Encyclopedia of RF and Microwave Engineering, 6 Volume Set by : Kai Chang
Download or read book Encyclopedia of RF and Microwave Engineering, 6 Volume Set written by Kai Chang and published by Wiley-Interscience. This book was released on 2005-03-14 with total page 5832 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF and Microwave Engineering is one of the fastest growth areas of the past decade and will probably continue to be a very active area of research and application in a large variety of fields. The six volume set of Encyclopedia of RF and Microwave Engineering illustrates how this field has been the key to enabling technology responsible for the phenomenal growth of wireless communications. This set also examines how RF and microwave engineering continues to have great influence as the technology behind such important applications as radar, remote sensing, remote control, sensors, navigation, surveillance, electronic warfare, radiometers, plasma research, and imaging. Prize or Award AAP Awards for Excellence in Professional and Scholarly Publishing, 2006
Book Synopsis Encyclopedia of Metalloproteins by : Robert H. Kretsinger
Download or read book Encyclopedia of Metalloproteins written by Robert H. Kretsinger and published by Springer. This book was released on 2013-05-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In biochemistry, a metalloprotein is a generic term for a protein that contains a metal cofactor. The metal may be an isolated ion or may be coordinated with a nonprotein organic compound, such as the porphyrin found in hemoproteins. In some cases, the metal is co-coordinated with a side chain of the protein and an inorganic nonmetallic ion. This kind of protein-metal-nonmetal structure is seen in iron-sulfur clusters Metalloproteins deals with all aspects related to the intracellular and extracellular metal-binding proteins, including their structures, properties and functions. The biological roles of metal cations and metal-binding proteins are endless. They are involved in all crucial cellular activities. Many pathological conditions are related to the problematic metal metabolism. Research in metalloprotein-related topics is therefore rapidly growing, and different aspects of metal-binding proteins progressively enter curricula at Universities and even at the High School level on occasion. However, no key resource providing basic, but comprehensible knowledge on this rapidly expanding field exists. The Encyclopedia of Metalloproteins aims to bridge this gap, and will attempt to cover various aspects of metalloprotein/metalloproteomics and will deal with the different issues related to the intracellular and extracellular metal-binding proteins, including their structures, properties and functions. The goal is to cover exhaustively all catalytically and biologically crucial metal ions and to find at least one interacting protein for other metal ions. The Encyclopedia of Metalloproteins will provide a key resource for advanced undergraduate and graduate students, researchers, instructors, and professors interested in protein science, biochemistry, cell biology, and genetics.
Book Synopsis Field Emission and Field Ionization by : Robert Gomer
Download or read book Field Emission and Field Ionization written by Robert Gomer and published by . This book was released on 1961 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Market: Students and researchers in vacuum and surface science, microscopy, and semiconductor physics. This definitive work was based on four lectures presented at Harvard University in 1958. When it was written, field emission was one of the few techniques available for surface studies and the attainment of ultra-high vacuum was a little-known art. Though more sophisticated treatments have since been developed, Gomer's pioneering work remains valid to this day.
Book Synopsis Dielectric Films for Advanced Microelectronics by : Mikhail Baklanov
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Book Synopsis Nanometer Scale Science and Technology by : Maria Allegrini
Download or read book Nanometer Scale Science and Technology written by Maria Allegrini and published by . This book was released on 2001 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
