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Investigation Of Electromigration Reliability In Alcu Interconnects
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Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Author :Electrochemical Society. Dielectric Science and Technology Division Publisher :The Electrochemical Society ISBN 13 :9781566770033 Total Pages :346 pages Book Rating :4.7/5 (7 download)
Book Synopsis Proceedings of the Symposia on Reliability of Semiconductor Devices/interconnections and Dielectric Breakdown, and Laser Process for Microelectronic Applications by : Electrochemical Society. Dielectric Science and Technology Division
Download or read book Proceedings of the Symposia on Reliability of Semiconductor Devices/interconnections and Dielectric Breakdown, and Laser Process for Microelectronic Applications written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 1992 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: Papers in this volume are from the 180th ECS Meeting, held in held in Phoenix, Arizona, Fall 1991. This symposium addresses all aspects of reliability of semiconductor devices, multilevel interconnection and dielectric breakdown in VLSI and ULSI technologies. The symposium establishes reliability from design through manufacturing. The second part of the symposium addresses laser ablation/etching, laser planarization laser/UV. CVD of metal end dielectric films, laser/UV enhanced etching and deposition processesing liquid phase, and photomodification of surfaces.
Book Synopsis Proceedings of the Symposia on Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization, Interconnection, and Contact Technologies by : Harzara S. Rathore
Download or read book Proceedings of the Symposia on Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization, Interconnection, and Contact Technologies written by Harzara S. Rathore and published by . This book was released on 1989 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections by : Cher Ming Tan
Download or read book Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2011-03-28 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.
Book Synopsis 3D Microelectronic Packaging by : Yan Li
Download or read book 3D Microelectronic Packaging written by Yan Li and published by Springer Nature. This book was released on 2020-11-23 with total page 629 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive reference guide for graduate students and professionals in both academia and industry, covering the fundamentals, architecture, processing details, and applications of 3D microelectronic packaging. It provides readers an in-depth understanding of the latest research and development findings regarding this key industry trend, including TSV, die processing, micro-bumps for LMI and MMI, direct bonding and advanced materials, as well as quality, reliability, fault isolation, and failure analysis for 3D microelectronic packages. Images, tables, and didactic schematics are used to illustrate and elaborate on the concepts discussed. Readers will gain a general grasp of 3D packaging, quality and reliability concerns, and common causes of failure, and will be introduced to developing areas and remaining gaps in 3D packaging that can help inspire future research and development.
Book Synopsis Principles of Extreme Mechanics (XM) in Design for Reliability (DfR) by : Arief Suriadi Budiman
Download or read book Principles of Extreme Mechanics (XM) in Design for Reliability (DfR) written by Arief Suriadi Budiman and published by Springer Nature. This book was released on 2021-11-13 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses issues pertinent to mechanics and stress generation, especially in recent advanced cases of technology developments, spanning from micrometer interconnects in solar photovoltaics (PV), next-gen energy storage devices to multilayers of nano-scale composites enabling novel stretchable/flexible conductor technologies. In these cases, the mechanics of materials have been pushed to the extreme edges of human knowledge to enable cutting-edge, unprecedented functionalities and technological innovations. Synchrotron X-ray diffraction, in situ small-scale mechanical testing combined with physics-based computational modeling/simulation, has been widely used approaches to probe these mechanics of the materials at their extreme limits due to their recently discovered distinct advantages. The techniques discussed in this manuscript are highlights specially curated from the broad body of work recently reported in the literature, especially ones that the author had led the pursuits at the frontier himself. Extreme stress generation in these advanced material leads to often new failure modes, and hence, the reliability of the final product is directly affected. From the recent topics and various advanced case studies covered in this book, the reader gets an updated knowledge of how new mechanics can and has been applied in Design-for-Reliability (DfR) for some of the latest technological innovations known in our modern world. Further, this also helps in building better designs, which may avoid the pitfalls of the current practiced trends.
Book Synopsis Electromigration in Metals by : Paul S. Ho
Download or read book Electromigration in Metals written by Paul S. Ho and published by Cambridge University Press. This book was released on 2022-05-12 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Book Synopsis Microelectronics Manufacturability, Yield, and Reliability by : Barbara Vasquez
Download or read book Microelectronics Manufacturability, Yield, and Reliability written by Barbara Vasquez and published by . This book was released on 1994 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Influence of Temperature on Microelectronics and System Reliability by : Pradeep Lall
Download or read book Influence of Temperature on Microelectronics and System Reliability written by Pradeep Lall and published by CRC Press. This book was released on 2020-07-09 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Book Synopsis Mechatronic Reliability by : Wei Yang
Download or read book Mechatronic Reliability written by Wei Yang and published by Springer Science & Business Media. This book was released on 2003-01-13 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first mechatronics book dealing with coupled mechanical and electrical actions, an emerging branch of modern technology. Authored by the leading scientist in this field, the book treats various subjects along the interface between mechanics and electronics.
Book Synopsis Analog IC Reliability in Nanometer CMOS by : Elie Maricau
Download or read book Analog IC Reliability in Nanometer CMOS written by Elie Maricau and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
Book Synopsis Multilevel Interconnection by : Hoang H. Hoang
Download or read book Multilevel Interconnection written by Hoang H. Hoang and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A One-Semester Course in Modeling of VSLI Interconnections by : Ashok Goel
Download or read book A One-Semester Course in Modeling of VSLI Interconnections written by Ashok Goel and published by Momentum Press. This book was released on 2014-12-29 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantitative understanding of the parasitic capacitances and inductances, and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of-the-art integrated circuits. More than 65 percent of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Mathematical techniques to model the parasitic capacitances, inductances, propagation delays, crosstalk noise, and electromigration-induced failure associated with the interconnections in the realistic high-density environment on a chip will be discussed. A One-Semester Course in Modeling of VLSI Interconnections also includes an overview of the future interconnection technologies for the nanotechnology circuits.
Book Synopsis Silicon Analog Components by : Badih El-Kareh
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 683 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Book Synopsis Materials Reliability in Microelectronics by :
Download or read book Materials Reliability in Microelectronics written by and published by . This book was released on 1999 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-Speed VLSI Interconnections by : Ashok K. Goel
Download or read book High-Speed VLSI Interconnections written by Ashok K. Goel and published by John Wiley & Sons. This book was released on 2007-10-19 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.
