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Author : Wei Chang
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.:/5 (295 download)
Download or read book Inverted Ge/GaAs Heterojunction Bipolar Transistors written by Wei Chang and published by . This book was released on 1993 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author : M F Chang
Publisher : World Scientific
ISBN 13 : 9814501069
Total Pages : 437 pages
Book Rating : 4.8/5 (145 download)
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Author : Juin J. Liou
Publisher : Artech House Publishers
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.3/5 (91 download)
Download or read book Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors written by Juin J. Liou and published by Artech House Publishers. This book was released on 1996 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.
Author : Institution of Electrical Engineers
Publisher : IET
ISBN 13 : 9780863412042
Total Pages : 330 pages
Book Rating : 4.4/5 (12 download)
Download or read book Physics and Technology of Heterojunction Devices written by Institution of Electrical Engineers and published by IET. This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Author : Jianjun Gao
Publisher : John Wiley & Sons
ISBN 13 : 1118921550
Total Pages : 394 pages
Book Rating : 4.1/5 (189 download)
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Author : Jiann S. Yuan
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 496 pages
Book Rating : 4.3/5 (91 download)
Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Author : Jessica E. Metcalfe
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (73 download)
Download or read book Silicon Germanium Heterojunction Bipolar Transistors written by Jessica E. Metcalfe and published by . This book was released on 2006 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William Liu
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 1312 pages
Book Rating : 4.3/5 (91 download)
Download or read book Handbook of III-V Heterojunction Bipolar Transistors written by William Liu and published by Wiley-Interscience. This book was released on 1998-04-27 with total page 1312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.
Author : Sung-Jin Ho
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (891 download)
Download or read book Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bruce Robert Hancock
Publisher :
ISBN 13 :
Total Pages : 182 pages
Book Rating : 4.:/5 (819 download)
Download or read book Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Bruce Robert Hancock and published by . This book was released on 1985 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Rebecca Jane Welty
Publisher :
ISBN 13 :
Total Pages : 332 pages
Book Rating : 4.:/5 (318 download)
Download or read book GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency written by Rebecca Jane Welty and published by . This book was released on 2002 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 364255900X
Total Pages : 671 pages
Book Rating : 4.6/5 (425 download)
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : Michael S. Shur
Publisher : Springer Science & Business Media
ISBN 13 : 1489919899
Total Pages : 677 pages
Book Rating : 4.4/5 (899 download)
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author : Andreas Pawlak
Publisher : Tudpress Verlag Der Wissenschaften Gmbh
ISBN 13 : 9783959080286
Total Pages : 244 pages
Book Rating : 4.0/5 (82 download)
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Author : Shahzad Akbar
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.E/5 ( download)
Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
