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Author : Ryan Clarke
Publisher :
ISBN 13 :
Total Pages : 380 pages
Book Rating : 4.:/5 (115 download)
Download or read book High-speed Serial Circuits Using SiGe HBT BiCMOS Technology written by Ryan Clarke and published by . This book was released on 2015 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834789
Total Pages : 321 pages
Book Rating : 4.3/5 (518 download)
Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author : Wei-Min Kuo
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (89 download)
Download or read book High-speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers written by Wei-Min Kuo and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) circuits for next-generation ground- and space-based millimeter-wave (MMW>= 30 GHz) communication front-ends and X-band (8 to 12 GHz) radar (radio detection and ranging) modules. The requirements of next-generation transceivers, for both radar and communication applications, are low power, small size, light weight, low cost, high performance, and high reliability. For this purpose, the high-speed circuits that satisfy the demanding specifications of next-generation transceivers are implemented in SiGe HBT BiCMOS technology, and the device-circuit interactions of SiGe HBTs to transceiver building blocks for performance optimization and radiation tolerance are investigated. For X-band radar module components, the dissertation covers: (1) The design of an ultra-low-noise X-band SiGe HBT low-noise-amplifier (LNA). (2) The design of low-loss shunt and series/shunt X-band Si CMOS single-pole double-throw (SPDT) switches. (3) The design of a low-power X-band SiGe HBT LNA for near-space radar applications. For MMW communication front-end circuits, the dissertation covers: (4) The design of an inductorless SiGe HBT ring oscillator for MMW operation. (5) The study of emitter scaling and device biasing on MMW SiGe HBT voltage-controlled oscillator (VCO) performance. (6) The study of proton radiation on MMW SiGe HBT transceiver building blocks.
Author : Mark J. W. Rodwell
Publisher : World Scientific
ISBN 13 : 9789812810014
Total Pages : 374 pages
Book Rating : 4.8/5 (1 download)
Download or read book High-speed Integrated Circuit Technology written by Mark J. W. Rodwell and published by World Scientific. This book was released on 2001 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.
Author : Young U. Yim
Publisher :
ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.:/5 (115 download)
Download or read book High Speed Serial Data Transmission Integrated Circuits with Half-rate Clock and Quarter-rate Clock in SiGe BiCMOS Technology written by Young U. Yim and published by . This book was released on 2006 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Niccolò Rinaldi
Publisher : River Publishers
ISBN 13 : 8793519613
Total Pages : 378 pages
Book Rating : 4.7/5 (935 download)
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author : Tommy Rosenbaum
Publisher : BoD – Books on Demand
ISBN 13 : 3743134268
Total Pages : 266 pages
Book Rating : 4.7/5 (431 download)
Download or read book Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches written by Tommy Rosenbaum and published by BoD – Books on Demand. This book was released on 2017-03-10 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bipolar complementary metal-oxide-semiconductor (BiCMOS) processes can be considered as the most general solution for RF products, as they combine the mature manufacturing tools of CMOS with the speed and drive capabilities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). HBTs in turn are major contenders for partially filling the terahertz gap, which describes the range in which the frequencies generated by transistors and lasers do not overlap (approximately 0.3 THz to 30 THz). To evaluate the capabilities of such future devices, a reliable prediction methodology is desirable. Using a heterogeneous set of simulation tools and approaches allows to achieve this goal successively and is beneficial for troubleshooting. Various scientific fields are combined, such as technology computer-aided design (TCAD), compact modeling and parameter extraction. To create a foundation for the simulation environment and to ensure reproducibility, the used material models of the hydrodynamic and drift-diffusion approaches are introduced in the beginning of this thesis. The physical models are mainly based on literature data of Monte Carlo (MC) or deterministic simulations of the Boltzmann transport equation (BTE). However, the TCAD deck must be calibrated on measurement data too for a reliable performance prediction of HBTs. The corresponding calibration approach is based on measurements of an advanced SiGe HBT technology for which a technology-specific parameter set of the HICUM/L2 compact model is extracted for the high-speed, medium-voltage and high-voltage transistor versions. With the help of the results, one-dimensional transistor characteristics are generated that serve as reference for the doping profile and model calibration. By performing elaborate comparisons between measurement-based reference data and simulations, the thesis advances the state-of-the-art of TCAD-based predictions and proofs the feasibility of the approach. Finally, the performance of a future technology in 28 nm is predicted by applying the heterogeneous methodology. On the basis of the TCAD results, bottlenecks of the technology are identified.
Author : Ramesh Harjani
Publisher : World Scientific
ISBN 13 : 9812774580
Total Pages : 233 pages
Book Rating : 4.8/5 (127 download)
Download or read book Design of High-speed Communication Circuits written by Ramesh Harjani and published by World Scientific. This book was released on 2006 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible. The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O. Contents: Achieving Analog Accuracy in Nanometer CMOS (M P Flynn et al.); Self-Induced Noise in Integrated Circuits (R Gharpurey & S Naraghi); High-Speed Oversampling Analog-to-Digital Converters (A Gharbiya et al.); Designing LC VCOs Using Capacitive Degeneration Techniques (B Jung & R Harjani); Fully Integrated Frequency Synthesizers: A Tutorial (S T Moon et al.); Recent Advances and Design Trends in CMOS Radio Frequency Integrated Circuits (D J Allstot et al.); Equalizers for High-Speed Serial Links (P K Hanumolu et al.); Low-Power, Parallel Interface with Continuous-Time Adaptive Passive Equalizer and Crosstalk Cancellation (C P Yue et al.). Readership: Technologists, scientists, and engineers in the field of high-speed communication circuits. It can also be used as a textbook for graduate and advanced undergraduate courses.
Author :
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (742 download)
Download or read book SiGe HBT BiCMOS for 2-160 Gb/s Next Generation Internet (NGI). written by and published by . This book was released on 2003 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Final Report describes the research related to high speed serial communication circuits implemented in SiGe HBT technology at Rensselaer Polytechnic Institute. Serializer/ Deserializer (SERDES) circuits are crucial in keeping pace with the rapidly advancing needs for high-speed data transmission in both short distance and long distance scenarios. Research was undertaken to make better use of existing long-haul infrastructure such as fiber optic networks, as well as for improving communication over much smaller scales such as those distances found on a typical PCB. Designs pushing the fundamental limits of the available manufacturing processes provide a fertile ground for developing innovative circuits in both the analog and digital realms. Work rapidly changes focus to the circuitry responsible for the most recently encountered bottleneck, be it in amplification, digital sampling, oscillators, or elsewhere. To date we have created two complete prototype designs, which were fabricated. A third design would capture 80% of the device fT as a bit rate. For IBM 5HP with an fT of 50 GHz this would be 40 Gb/s, but for a 210 GHz ft in IBM 8HP this would become 160 Gb/s. The challenge is to achieve unprecedented symmetry in the SERDES circuit and layout, as well as development of extremely low jitter VCOfs. Figure 7.15 at the end of this report shows just how good the result may be after all the circuit work is completed.
Author : Jung Han Choi
Publisher : CRC Press
ISBN 13 : 1466590122
Total Pages : 258 pages
Book Rating : 4.4/5 (665 download)
Download or read book High-Speed Devices and Circuits with THz Applications written by Jung Han Choi and published by CRC Press. This book was released on 2017-09-19 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.
Author : Tho T Vu
Publisher : World Scientific
ISBN 13 : 9814486434
Total Pages : 363 pages
Book Rating : 4.8/5 (144 download)
Download or read book Compound Semiconductor Integrated Circuits written by Tho T Vu and published by World Scientific. This book was released on 2003-04-02 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Author : Magnus Willander
Publisher : World Scientific
ISBN 13 : 9813225416
Total Pages : 150 pages
Book Rating : 4.8/5 (132 download)
Download or read book Scaling And Integration Of High-speed Electronics And Optomechanical Systems written by Magnus Willander and published by World Scientific. This book was released on 2017-04-17 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.
Author : Sorin Voinigescu
Publisher : Cambridge University Press
ISBN 13 : 0521873029
Total Pages : 921 pages
Book Rating : 4.5/5 (218 download)
Download or read book High-Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
Author : Timothy Osborne Dickson
Publisher :
ISBN 13 : 9780494279403
Total Pages : 398 pages
Book Rating : 4.2/5 (794 download)
Download or read book Low-voltage and Low-power Silicon Germanium BiCMOS Topologies for 80-100 Gigabit-per-second Serial Communication written by Timothy Osborne Dickson and published by . This book was released on 2007 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new concepts presented in this thesis enable the design of highly-integrated broadband circuits in a 130-nm SiGe BiCMOS technology with 150-GHz fT SiGe HBT. The first single-chip pseudo-random binary sequence generator with a pattern length of 231 - 1 is reported and achieves a maximum output data rate of 80 Gb/s. Additionally, the first 86-Gb/s serial transmitter is presented, which operates from a 2.5-V supply voltage and consumes less power (1.36 W) than any 40-Gb/s serial transmitter reported to date. This thesis focuses on new design challenges which arise in the design of next-generation wireline circuits operating at data rates of 80--100 Gb/s. Methodologies for low-power high-speed logic are described. A new low-voltage BiCMOS current-mode logic family is introduced, which allows for more than a 20% reduction in power consumption in high-speed building blocks. This logic family, based on a MOS-HBT cascode topology with common-source nMOS and common-base SiGe HBT, takes full advantage of the best features of both devices to achieve low-voltage, high-speed operation. Algorithmic design methodologies for MOS and BiCMOS high-speed logic circuits are presented based on the invariance of characteristic current densities in nanoscale MOSFETs, resulting in robust designs which can be ported between foundries and even across technology nodes. Further reduction in building block power consumption can be achieved by trading of bias current for inductive peaking. For the first time, monolithic spiral inductors and transformers are demonstrated for use at mm-wave frequencies. Broadband inductor models along with a model extraction methodology based on measured or simulated y-parameters is described for the first time. Low-noise broadband input stages are compared theoretically and experimentally to determine the best topology to improve sensitivity in Ethernet or backplane receivers. It is proven that the transimpedance input stage yields the best noise performance, highest bandwidth, best input matching, and lowest power consumption than more conventional emitter-follower-inverter or Cherry-Hooper input stages, making it an ideal topology for use in broadband receivers.
Author : Sorin Voinigescu
Publisher : Cambridge University Press
ISBN 13 : 110731061X
Total Pages : 921 pages
Book Rating : 4.1/5 (73 download)
Download or read book High-Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. Step-by-step design methodologies, end-of-chapter problems and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
Author : Antonio R. Alvarez
Publisher : Springer Science & Business Media
ISBN 13 : 9780792393849
Total Pages : 430 pages
Book Rating : 4.3/5 (938 download)
Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 1993-09-30 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Author : Yuyu Liu
Publisher : World Scientific
ISBN 13 : 9814478709
Total Pages : 242 pages
Book Rating : 4.8/5 (144 download)
Download or read book High-speed Optical Transceivers: Integrated Circuits Designs And Optical Devices Techniques written by Yuyu Liu and published by World Scientific. This book was released on 2006-03-09 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the unique advantages and large inherent transmission capacity of optical fiber communication systems. The long-term and high-risk research challenges of optical transceivers are analyzed with a view to sustaining the seemingly insatiable demand for bandwidth. A broad coverage of topics relating to the design of high-speed optical devices and integrated circuits, oriented to low power, low cost, and small area, is discussed.Written by specialists with many years of research and engineering experience in the field of optical fiber communication, this book is essential for an audience dedicated to the development of integrated electronic systems for optical communication applications. It can also be used as a supplementary text for graduate courses on optical transceiver IC design.
