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Growth Of Inp Based Materials And Heterostructures Using Metalorganic Vapor Phase Epitaxy For High Frequency Device Applications
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Book Synopsis Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications by : Kyushik Hong
Download or read book Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications written by Kyushik Hong and published by . This book was released on 1996 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits by : Delong Cui
Download or read book InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits written by Delong Cui and published by . This book was released on 2001 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organometallic Vapor-Phase Epitaxy by : Gerald B. Stringfellow
Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 1999-03-04 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices. Updated with new emphasis on the semiconducting nitride materials—GaN and its alloys with In and Al Emphasizes the newly understood aspects of surface processes Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis Metal Organic Vapor Phase Epitaxy Growth and Electrical Characterization of High-resistivity and Lattice-mismatched InAsy̳P1-y̳ and A1x̳In1-x̳Asy̳P1-y̳ Buffer Layers for InAs on InP Device Application by : Steven Sontung Bui
Download or read book Metal Organic Vapor Phase Epitaxy Growth and Electrical Characterization of High-resistivity and Lattice-mismatched InAsy̳P1-y̳ and A1x̳In1-x̳Asy̳P1-y̳ Buffer Layers for InAs on InP Device Application written by Steven Sontung Bui and published by . This book was released on 2008 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-Based Materials and Devices by : Osamu Wada
Download or read book InP-Based Materials and Devices written by Osamu Wada and published by Wiley-Interscience. This book was released on 1999-04-13 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Book Synopsis InP and Related Compounds by : M O Manasreh
Download or read book InP and Related Compounds written by M O Manasreh and published by CRC Press. This book was released on 2000-08-08 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) Growth and Characterization of III-nitride Heterostructures for Application in Electronic Devices by : Seth Martin Hubbard
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) Growth and Characterization of III-nitride Heterostructures for Application in Electronic Devices written by Seth Martin Hubbard and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of InGaAs/InP Multiple Quantum Well by Metalorganic Vapor Phase Epitaxy by : Xiaosong Jiang
Download or read book Growth of InGaAs/InP Multiple Quantum Well by Metalorganic Vapor Phase Epitaxy written by Xiaosong Jiang and published by . This book was released on 1994 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices by : Rajendra Singh
Download or read book First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices written by Rajendra Singh and published by . This book was released on 1989 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington by :
Download or read book Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington written by and published by National Academies. This book was released on 1997 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Selective Growth of InP/GaInAs Heterostructures Using Metalorganic Molecular Beam Epitaxy by : Y. L. Wang
Download or read book Selective Growth of InP/GaInAs Heterostructures Using Metalorganic Molecular Beam Epitaxy written by Y. L. Wang and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selective area growth is used in the fabrication of Si epitaxial devices such as bipolar transistors. This growth technique facilitates the preparation of very complex self-aligned and buried transistor structures. Selective growth has been investigated in the III-V materials, without, however, any significant results pertaining to the optical or electrical quality of the material grown, or device results. In this work, we investigate selective growth of InP and GaInAs on S'02-masked InP substrates using metalorganic molecular beam epitaxy (MOMBE). Group Ill and V elements are derived from triethylgallium and trimethylindium, and AsH3 and PH3 respectively. Excellent selectivity is achieved in the temperature range from 5 10 to 540 deg C.
Book Synopsis Epitaxial Silicon Technology by : B Baliga
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Book Synopsis Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, by : M. G. Astles
Download or read book Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Book Synopsis Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide by : Lester F. Eastman
Download or read book Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide written by Lester F. Eastman and published by . This book was released on 1975 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Book Synopsis Three Nitride Metal Organic Vapor Phase Epitaxy Growth and Characterization and Use in Gas Sensing Devices by : Eunjung Cho
Download or read book Three Nitride Metal Organic Vapor Phase Epitaxy Growth and Characterization and Use in Gas Sensing Devices written by Eunjung Cho and published by . This book was released on 2009 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal Vapor Phase Epitaxy by : John D. Leighton
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
