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Growth And Characterization Of Wide Gap Semiconducting Oxide And Chalcogenide Thin Films By Pulsed Laser Deposition
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Book Synopsis Growth and Characterization of Wide-gap Semiconducting Oxide and Chalcogenide Thin Films by Pulsed Laser Deposition by : Paul F. Newhouse
Download or read book Growth and Characterization of Wide-gap Semiconducting Oxide and Chalcogenide Thin Films by Pulsed Laser Deposition written by Paul F. Newhouse and published by . This book was released on 2008 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: The preparation and characterization of thin film oxides and chalcogenides by pulsed laser deposition (PLD) is presented. An overview of fundamental PLD concepts are presented and are followed by a description implementation and development of the PLD systems at OSU. We present the results of thin film growth of high electron mobility In2O3:W in which we have prepared films exhibiting □ > 100 cm2/Vs on vitreous SiO2 substrates. The growth of Cu3TaQ 4 (Q = S, Se) films is outlined as a two step process consisting of PLD of ceramic targets followed by ex-situ annealing in chalcogenide vapor. Also, BiCuOSe thin films have been prepared in-situ and exhibit a high hole mobility up to 4 cm2/Vs. A discussion of their electronic structure is presented which explains the nature of the low band gap energy on the basis of deep Bi 6p level at the conduction band minimum. Finally, the results of BaBiO3 thin film preparation are presented in which both polycrystalline and highly (00l) oriented samples were grown.
Author :Satishchandra B. Ogale Publisher :Springer Science & Business Media ISBN 13 :0387260897 Total Pages :416 pages Book Rating :4.3/5 (872 download)
Book Synopsis Thin Films and Heterostructures for Oxide Electronics by : Satishchandra B. Ogale
Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-11-21 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Book Synopsis Development and Characterization of Pulsed Laser Deposited Tungsten Oxide Thin Films for Electrochromic Applications by : Syed Ali Shamoel Zaidi
Download or read book Development and Characterization of Pulsed Laser Deposited Tungsten Oxide Thin Films for Electrochromic Applications written by Syed Ali Shamoel Zaidi and published by . This book was released on 2013 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: In order to fabricate layered electrochromic devices capable of reversibly changing color in response to applied voltage, pulsed laser deposition was used to deposit thin films of tungsten oxide on fluorine doped tin oxide substrates.The thin films were deposited at room temperature in an O2 atmosphere of the order of 10−1 mbar on FTO/glass substrates using a KrF pulsed laser source. XRD analysis confirmed the resulting films to be amorphous and UV-Vis spectroscopy confirmed transparency. Raman shift confirms non-crystalline WO3 presence. Electrochromic devices were connected to a cyclic voltammetry system to regulate voltage sweeps, investigate charge transport, response time and reversibility of color/bleached states. Scanning electron microscopy was performed on the films post device operation to examine the surface topography and composition. Raman spectroscopy and XRD was performed post device films to investigate any changes in the films. Li+ ion conducting glasses of composition xLi2SO4 - (1-x)[0.50Li2O-0.5(2NH4H2PO2)) were characterized using resistivity measurements and neutron diffraction experiments to evaluate them as suitable substitutes for the electrolyte in the electrochromic devices. Formation of crystallites above 400°C has been observed which is understood to hamper Li+ ion mobility, resulting in reduced performance of the electrolyte. The acid based electrochromic devices have exhibited superior reversibility.
Book Synopsis Growth of Semiconductor Thin Films by Pulsed Laser Deposition by : Yilu Li
Download or read book Growth of Semiconductor Thin Films by Pulsed Laser Deposition written by Yilu Li and published by . This book was released on 2016 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide and tin dioxide on (111) p-type silicon wafers within a versatile high vacuum laser deposition system. This pulsed laser deposition system was self-designed and self-built. Parameters such as pressure, target temperature, and distance from the target to the substrate can be adjusted in the system. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction spectroscopy, Raman spectroscopy and ellipsometry were used to analyze the structures and properties of ZnO and SnO2 thin films. The critical temperature required to fabricate a crystalline ZnO thin film by pulsed laser deposition was found and has been confirmed. For the SnO2 thin film, the critical temperature required to generate a crystalline structure could not be found because of the temperature limit of the substrate heater used in the experiment. In SnO2 thin films, thermal annealing has been used to convert into crystalline structure with (110), (101) and (211) orientations. After fabricating the amorphous SnO2 thin films, they were put into an oven with specific temperatures to anneal them. The minimum annealing temperature range was found for converting the amorphous SnO2 thin films into SnO2 thin films with a crystalline structure. Thermal annealing has also been applied to some amorphous ZnO thin films which were fabricated under the critical temperature required to produce crystalline ZnO thin films. The minimum annealing temperature range for amorphous ZnO thin films was found and only one orientation (002) shown after annealing. Laser annealing technology has also been applied for converting both amorphous ZnO and SnO2 thin films, and results show that this method was not well suited for this attempt. ZnO thin films and SnO2 thin films with a crystalline structure have inportant widely used in industry, for example, application in devices such as solar cells and UV or blue-light-emitting devices. The aim of this research is to help improving the manufacturing process of ZnO and SnO2 thin films.
Book Synopsis Thin Films and Heterostructures for Oxide Electronics by : Satishchandra B. Ogale
Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Semiconducting Properties of Oxide Thin Films Prepared by Pulsed Laser Deposition by : Ching-yee Lam
Download or read book Semiconducting Properties of Oxide Thin Films Prepared by Pulsed Laser Deposition written by Ching-yee Lam and published by . This book was released on 2005 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Magnetic Semiconducting Oxide Thin Films and Heterostructures by Pulsed Laser Deposition by : Gong Wai Leung
Download or read book Magnetic Semiconducting Oxide Thin Films and Heterostructures by Pulsed Laser Deposition written by Gong Wai Leung and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor -- Indium Gallium Zinc Oxide by :
Download or read book Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor -- Indium Gallium Zinc Oxide written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were investigated. The thin films of europium doped gallium and gadolinium oxides and indium gallium zinc oxide were deposited on c-axis oriented sapphire substrates by Pulsed Laser Deposition at various conditions of temperature, pressure and doping concentration. Europium doped gallium oxide was found to be in beta phase with monoclinic crystal structure and the films exhibited intense red emission under cathode ray excitation with a peak wavelength of emission at 611 nm which corresponds to the transitions from 5D0 to 7F2 levels in europium. Europium doped gadolinium oxide thin films were found to exhibit two different phases (cubic and monoclinic) with the one of the phases being dominant depending on the growth conditions. The peak wavelength of emission was either 611 nm or 613 nm depending on the phase of the films. The amorphous indium gallium zinc oxide thin films were found to exhibit very high hall mobilities of the order of ̃15 cm2∙V−1∙s−1 and the conductivity could be controlled over several orders of magnitude from 5 x 10−3 S∙cm−1 to 10 S∙cm−1 in the amorphous phase. Annealing the films in presence of air was found to decrease the carrier concentration of the films due the incorporation of oxygen in the films thereby filling up the oxygen vacancies. Applications of amorphous indium gallium zinc oxide include Transparent Thin Film Transistors and use as transparent conducting oxide for optoelectronic devices.
Book Synopsis Functional Complex Oxide Thin Films and Related Superlattices Grown Via Pulsed Laser Deposition by : Joseph A. Cianfrone
Download or read book Functional Complex Oxide Thin Films and Related Superlattices Grown Via Pulsed Laser Deposition written by Joseph A. Cianfrone and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Oxide electronics offer a wide array of interesting properties, including ferromagnetism, ferroelectricity and superconductivity. This dissertation investigates the transport, magnetic, and structural properties of several perovskite and spinel material systems, with particular interest in their manipulation at the nanoscale through the growth of functional heterostructures. Spinel phase ZnCo2O4 is investigated as a ferromagnetic semiconductor whose carrier type changes with oxygen concentration. The perovskite system of K(Ta, Nb)O3 is investigated for its interesting properties as a solid solution which exhibits a ferroelectric transition dependent on composition. Its thin film epitaxial growth modes are investigated via reflection high energy electron diffraction, with particular attention paid to the volatile potassium ion. Superlattices of K(Ta, Nb)O3 and SrTiO3 are also investigated for the possibility of dielectric enhancement and conductive interfaces. The multiferroic properties of BaFeO3 K(Ta, Nb)O3 superlattices are investigated, with particular attention paid to the role of magnetoelectric coupling and strain as stabilizing mechanisms.
Book Synopsis Synthesis and Characterization of Wide Band Gap Semiconductor Thin Films by : Sindhura Vadlamani
Download or read book Synthesis and Characterization of Wide Band Gap Semiconductor Thin Films written by Sindhura Vadlamani and published by . This book was released on 2003 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterizations of Complex Oxide Thin Film Heterostructures Via Pulsed Laser Deposition by : Kyeong-Won Kim
Download or read book Growth and Characterizations of Complex Oxide Thin Film Heterostructures Via Pulsed Laser Deposition written by Kyeong-Won Kim and published by . This book was released on 2012 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: The superlattices showed the strain induced enhancement of magnetization and the Curie temperature of superlattices were lowered substantially with increasing strain. Phosphorus doped ZnOthin films were deposited on ZnO buffer grown under different growth conditions and the properties of thin films were examined, focusing on the role of buffer layers. Phosphorus doped ZnO thin films on buffer layer grown at low temperature were less conductive as grown state and showed a drastic change in the transport properties upon the rapid thermal annealing. This suggests that poor crystalline quality of the buffer layer grown at low temperature lead to the more incorporation of phosphorus dopants in following films. A high resolution X-ray diffraction study confirmed the poor crystalline quality of phosphorus doped thin films on low temperature deposited buffer layer by broader peaks of omega rocking curves. Also it was observed that the microstructures of the phosphorus doped ZnO thin film significantly depended on the buffer layer.
Book Synopsis Growth and Characterization of LuFe2O4 Thin Film by Pulsed Laser Deposition by : Jun Liu
Download or read book Growth and Characterization of LuFe2O4 Thin Film by Pulsed Laser Deposition written by Jun Liu and published by . This book was released on 2010 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comparative Characterization of Molybdenum Oxide Thin Films Grown on Various Substrates Using Temporally Different Pulsed Laser Deposition Techniques by : Krishna Harsha Puppala
Download or read book Comparative Characterization of Molybdenum Oxide Thin Films Grown on Various Substrates Using Temporally Different Pulsed Laser Deposition Techniques written by Krishna Harsha Puppala and published by . This book was released on 2016 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulsed Laser Deposition (PLD) technique, with its vast tunability in terms of thin film fabrication has been the center of this study. By changing the temporal component of the laser source used for deposition into the femtosecond (fs) regime, interesting structural, morphological changes can be achieved which may prove to be beneficial for photocatalytic applications. In particular, molybdenum oxide thin films, which are the less well-studied and potentially newer candidates for photocatalysis applications have been chosen for investigation. Hence, a detailed characterization study of molybdenum oxide thin films synthesized using femtosecond-based (f-PLD) and nanosecond-based (n-PLD) techniques, was carried out in terms of their structural, morphological, surface chemical/ electronic states and vibrational properties using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. The f-PLD technique was found to produce more favorable molybdenum oxide thin films deposited on glass for surface-related applications, in terms of having a higher surface to volume ratio, than the n-PLD technique. A related simultaneous study of substrate-based effect on the thin films produced using n-PLD system, also revealed both variation among the morphological, structural, and electronic (in terms of Mo oxidation state) properties depending upon the nature of the substrate used to synthesize the molybdenum oxide thin films. Special cases of thin films on epitaxial substrates (Si, sapphire) have been characterized to determine the parameters necessary for fabricating highly-textured thin films with large surface-area to volume ratio, which is key to efficient photo-catalysts.
Book Synopsis Growth and Characterization of Cobalt Doped Indium Oxide Thin Films by : Naveen Kumar Mamidi
Download or read book Growth and Characterization of Cobalt Doped Indium Oxide Thin Films written by Naveen Kumar Mamidi and published by . This book was released on 2007 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Scale Characterization of Complex Oxide Thin Films by : Meng Gu
Download or read book Atomic Scale Characterization of Complex Oxide Thin Films written by Meng Gu and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials with the ABO3 perovskite structure possess a wide variety of properties including superconductivity, ferroelectric, and magnetic properties. These properties are highly tunable due to the fact that the B site cation can assume multiple valence states and its high structural stability allows for large scale doping and strain. Due to a reduced dimensionality, two dimensional thin films and superlattices grown using techniques such as pulsed laser deposition (PLD) often possess novel properties which differ from the bulk perovskite materials. The origins of these novel properties can be traced to interfacial chemical intermixing, electronic reconstruction, strain as well as defect formation, which cause significant changes in the electronic structures. Therefore, it is crucially important to investigate the atomic and electronic structures of the functional materials in order to understand the correlation between microstructures and physical properties. Chemically-sensitive Z-contrast imaging and bonding-sensitive electron energy loss spectroscopy (EELS) in aberration corrected scanning transmission electron microscopes (STEM) can directly characterize the local structure, strain, composition and bonding on the atomic scale. Determination of the atomic and electronic structures of the interfaces and defects in the thin films can then be correlated with the magnetic and transport properties. Therefore, the understanding of the structure-property relationship for several different systems of perovskite oxide thin films and superlattices were developed on the atomic scale. Multifunctional superlattices composed of ferromagnetic (FM) La(0.7)Sr(0.3)MnO3 (LSMO) and antiferromagnetic (AFM) La(0.7)Sr(0.3)FeO3 (LSFO) have potential applications for next generation data storage and logic devices. Defect formation, driven by strain relaxation in the LSMO/LSFO superlattices can modify not only the structure and surface sharpness, but also the functional properties of the superlattice. Stacking faults were found as one efficient way of strain relaxation while maintaining robust antiferromagnetic properties for a thin [3LSMO][6LSFO] superlattice (repeating motif composed of 3 unit-cell LSMO sublayer and 6 unit-cell LSFO sublayer). On the other hand, for a fully strained [3LSMO][6LSFO], large inter-diffusion across the interface between the LSMO and LSFO layers was detected in EELS line scans, resulting in deteriorated AFM properties. When a [6LSMO][6LSFO] superlattice with one micron thickness, a high density of nanoflowers and cracks/pinholes were observed to result from strain relaxation. The formation of these nanoflowers and cracks/pinholes was suppressed by increasing the growth rate and thereby reducing the growth time and overall thermal treatment of the sample. Strain relaxation was shown to be directly related to the growth conditions and have a large effect on both the structure and functional properties of the superlattices. A series of superlattices composed of non-magnetic La(0.5)Sr(0.5)TiO3 (LSTO) and ferromagnetic LSMO were grown on single crystal oxide substrates with different amounts of misfit strain. No significant electronic structure changes along the interfaces was observed in this series of superlattices as revealed by atomic resolution EELS. In comparison, charge transfer effect was reported for the LSMO/STO superlattices and was shown to cause an ultrathin magnetic dead layer along the interfaces. Thus, compared with the LSMO/STO superlattice, composition tuning of the sublayers was proven to be efficient in controlling the interfacial charge transfer effects in a superlattice. In addition, tetragonal distortion was found to reduce the ferromagnetic ordering, decrease the Tc, increase the resistivity, and even lead to metal-insulator transitions of the superlattices. The strain relaxation defects such as dislocations and low angle grain boundaries serve as important pinning sites for magnetic domains, leading to enhanced coercive field strength. In order to determine the properties of an intermixed interface layer, we have performed a detailed study of the solid solution between LSMO and LSFO, i.e. La(0.7)Sr(0.3)Mn(0.5)Fe(0.5)O3 (LSMFO). A large target-substrate distance during the PLD growth led to cation segregation in the LSMFO film. Cation segregation could cause the formation of diverse local magnetic ordering and B site valence states due to the different local stoichiometry and coordination environment. For the cation segregated LSFMO films, robust ferromagnetic and antiferromagnetic coupling was observed at 150K and room temperature. Decreasing the target-substrate distance resulted to a homogeneous cation distribution in the film, without any ferromagnetic ordering as expected. This result suggests the important role of target-substrate distance and the kinetic energy of the plume species on the crystalline quality and functional properties of perovskite oxide thin films. La(x)Sr(1-x)TiO3 possesses a wide range of functional properties which make it an attractive candidate material for applications such as the conductive buffer for high temperature superconductor growth, transparent conductors, and anodes in solid oxide fuel cells. La(0.5)Sr(0.5)TiO3 thin films were grown using PLD and the resistivity was found to be highly dependent on the O2 background pressure used in the deposition. However, a thin film which was deposited as a single phase film was transformed into a semi-ordered superlattice with TiO2 rich stacking faults and distorted lattices upon exposure to high oxygen pressure (~200torr) during the cooling procedure after deposition. This phase change stabilized Ti4+ ions and dramatically increased the resistivity of the film. In addition, a two dimensional free electron gas could be constructed by confining a few unit cells of La doped STO with STO spacer layers. Our study showed that charge transfer over a distance of ~2 u.c. was present in Sr(0.75)La(0.25)TiO3/STO superlattices. This thickness defined the lower limit for the thickness of the STO spacers in order to confine the charge carriers into two dimensions; secondly, the La dopants were shown to be less localized in thicker superlattice (~100nm) due to interdiffusion upon extended thermal exposure. This information provided important feedback on the fabrication and utilization of this material.In conclusion, several perovskite thin film systems with fascinating properties have been explored in this thesis. Strain states and strain relaxations, defect formation, interfacial atomic mixing, charge transfer, and cation segregation were shown to have profound effect on the functional properties of complex oxide thin film systems. Atomic resolution Z-contrast imaging and EELS provide extremely useful information on the structural and electronic structure variations, which enable us to see the whole picture of growth, structure and properties' interactions.
