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Author :
Publisher :
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.3/5 (91 download)
Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 960 pages
Book Rating : 4.3/5 (91 download)
Download or read book GaN and Related Alloys written by and published by . This book was released on 2002 with total page 960 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. J. Pearton
Publisher :
ISBN 13 :
Total Pages : 1056 pages
Book Rating : 4.:/5 (318 download)
Download or read book GaN and Related Alloys: Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Author : Stephen J. Pearton
Publisher : CRC Press
ISBN 13 : 9789056996864
Total Pages : 724 pages
Book Rating : 4.9/5 (968 download)
Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.
Author : John E. Northrup
Publisher :
ISBN 13 :
Total Pages : 912 pages
Book Rating : 4.:/5 (318 download)
Download or read book GaN and Related Alloys - 2001: Volume 693 written by John E. Northrup and published by . This book was released on 2002-07-23 with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author :
Publisher :
ISBN 13 :
Total Pages : 53 pages
Book Rating : 4.:/5 (946 download)
Download or read book Symposium L: GaN and Related Alloys written by and published by . This book was released on 2003 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Symposium L on GaN and Related Alloys, recent results on growth and characterization of III-nitride semiconductors and their application in optoelectronic and electronic devices were reported. Several advances were reported in nitride-based technology for visible and UV-light emitters. Researchers at the University of South Carolina presented results on LEDs operating at 250 nm, while NTT researchers presented 350-nm UV LEDs with maximum external efficiency of 1.4%; phosphor-coated red and white LEDs incorporating their UV LEDs were also described by NTT. Lumileds researchers discussed the performance of their latest Luxeon LEDs, which achieve external quantum efficiency of 25% and 10% at 450 nm and 530 nm, respectively. In addition, Lumileds presented a demonstration of backlighting using 34 Luxeon chips to create a full-color light source with color temperature up to 15,000 K.A number of notable results in the nitride materials characterization arena were presented, particularly with regard to defect structure and the behavior of Mg in p-doped GaN. Continued advances were also reported in the development of nitride-based electronic devices. New materials and device designs for nitride-based heterostructure FETs, targeted for rf power applications, were presented by several research groups. Included among these was a discussion of advances in the growth and fabrication of nitride electronic devices on Si substrates. Also reported were initial results on an AlGaAs-GaAs-GaN heternstructure biopolar transistor realized using a wafer fusion process for device fabrication.
Author : Thomas H. Myers
Publisher : Cambridge University Press
ISBN 13 : 9781107413290
Total Pages : 1052 pages
Book Rating : 4.4/5 (132 download)
Download or read book GaN and Related Alloys - 1999: written by Thomas H. Myers and published by Cambridge University Press. This book was released on 2014-06-05 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author :
Publisher :
ISBN 13 :
Total Pages : 53 pages
Book Rating : 4.:/5 (946 download)
Download or read book Symposium Y: GaN and Related Alloys written by and published by . This book was released on 2004 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John E. Northrup
Publisher : Cambridge University Press
ISBN 13 : 9781107412071
Total Pages : 888 pages
Book Rating : 4.4/5 (12 download)
Download or read book GaN and Related Alloys - 2001: written by John E. Northrup and published by Cambridge University Press. This book was released on 2014-06-05 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on three main themes. Theme one - advances in basic science. Point defects, dislocations, doping, the properties of nitride alloys with a special emphasis on localization phenomena and GaAsN alloys (which are very promising for long-wavelength emitters), transport and optical properties are also featured. Theme two - growth and growth-related issues. Significant advances have been made in understanding/improving all major nitride growth techniques (MBE, MOCVD, HVPE). Techniques such as ELOG and the development of bulk-like substrates are receiving attention as methods to reduce the number of dislocations. Theme three - devices. Tremendous progress has been reported in device design and optimization, and also in understanding device processing issues such as p-contacts, laser lift-off, and etching. Overall, the book offers a broad exchange of scientific knowledge and technical expertise. Topics include: molecular beam epitaxy and growth kinetics; point defects and doping; light emitters; nitride alloys and lateral epitaxy; quantum wells; transport and optical properties; vapor phase epitaxy; extended defects; electronic devices and processing.
Author : Hock Min Ng
Publisher : Cambridge University Press
ISBN 13 : 9781107409286
Total Pages : 862 pages
Book Rating : 4.4/5 (92 download)
Download or read book GaN and Related Alloys - 2003: written by Hock Min Ng and published by Cambridge University Press. This book was released on 2014-06-05 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2004, focuses on both the fundamental issues in materials science as well as the technology of photonic, electronic and sensor applications utilizing gallium nitride (GaN) and related alloys. With contributions from 28 countries spanning 5 continents, it is evident that the field is vibrant and growing rapidly. Current and emerging research areas are addressed - epitaxial growth strategies for high-indium-content InGaN alloys, InGaAlN alloys, and dilute nitride alloys; increasing the p-type doping levels in GaN and AlGaN alloys; developing large-area GaN and AlN substrates; controlling and understanding the influence of defects and polarization; device processing techniques; and developing new applications for III-nitrides.
Author : Materials Research Society. Meeting
Publisher :
ISBN 13 :
Total Pages : 900 pages
Book Rating : 4.:/5 (318 download)
Download or read book GaN and Related Alloys - 2002: Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Download or read book GaN and Related Alloys-2002 written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and Related Alloys.2001 written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (637 download)
Download or read book GaN and Related Alloys written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Materials Research Society. Meeting Symposium C.
Publisher :
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.:/5 (318 download)
Download or read book Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068 written by Materials Research Society. Meeting Symposium C. and published by . This book was released on 2008-08-29 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1498747140
Total Pages : 709 pages
Book Rating : 4.4/5 (987 download)
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
