Fully Depleted Silicon-On-Insulator

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Author :
Publisher : Elsevier
ISBN 13 : 0128231653
Total Pages : 386 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Fully Depleted Silicon-On-Insulator by : Sorin Cristoloveanu

Download or read book Fully Depleted Silicon-On-Insulator written by Sorin Cristoloveanu and published by Elsevier. This book was released on 2021-08-04 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

Silicon-On-Insulator (SOI) Technology

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Author :
Publisher : Elsevier
ISBN 13 : 0857099256
Total Pages : 496 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Silicon-On-Insulator (SOI) Technology by : O. Kononchuk

Download or read book Silicon-On-Insulator (SOI) Technology written by O. Kononchuk and published by Elsevier. This book was released on 2014-06-19 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics

Silicon-on-Insulator Technology: Materials to VLSI

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9781402077739
Total Pages : 392 pages
Book Rating : 4.0/5 (777 download)

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Book Synopsis Silicon-on-Insulator Technology: Materials to VLSI by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology: Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

Silicon-on-Insulator Technology: Materials to VLSI

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1441991069
Total Pages : 375 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Silicon-on-Insulator Technology: Materials to VLSI by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology: Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.

SIMOX

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Author :
Publisher : IET
ISBN 13 : 9780863413346
Total Pages : 164 pages
Book Rating : 4.4/5 (133 download)

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Book Synopsis SIMOX by : Maria J. Anc

Download or read book SIMOX written by Maria J. Anc and published by IET. This book was released on 2004-12-03 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: SIMOX represents the first effort to compile a broad spectrum of knowledge from various groups of researchers and technologists in the world. It provides the reader with a basic understanding of SIMOX technology and in addition gives a good starting point for further investigation and applications.

Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

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Author :
Publisher : Springer
ISBN 13 : 3030045137
Total Pages : 122 pages
Book Rating : 4.0/5 (3 download)

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Book Synopsis Device Physics, Modeling, Technology, and Analysis for Silicon MESFET by : Iraj Sadegh Amiri

Download or read book Device Physics, Modeling, Technology, and Analysis for Silicon MESFET written by Iraj Sadegh Amiri and published by Springer. This book was released on 2018-12-13 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

Wafer Bonding

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Publisher : Springer Science & Business Media
ISBN 13 : 3662108275
Total Pages : 510 pages
Book Rating : 4.6/5 (621 download)

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Book Synopsis Wafer Bonding by : Marin Alexe

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs

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Author :
Publisher : Presses univ. de Louvain
ISBN 13 : 9782874630880
Total Pages : 176 pages
Book Rating : 4.6/5 (38 download)

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Book Synopsis Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs by : Maryline Bawedin

Download or read book Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs written by Maryline Bawedin and published by Presses univ. de Louvain. This book was released on 2007 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.

Silicon-on-Insulator Technology and Devices X

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566773096
Total Pages : 482 pages
Book Rating : 4.7/5 (73 download)

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Book Synopsis Silicon-on-Insulator Technology and Devices X by : Electrochemical Society. Electronics Division

Download or read book Silicon-on-Insulator Technology and Devices X written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2001 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-on-insulator Technology and Devices 13

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566775531
Total Pages : 409 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Silicon-on-insulator Technology and Devices 13 by : George K. Celler

Download or read book Silicon-on-insulator Technology and Devices 13 written by George K. Celler and published by The Electrochemical Society. This book was released on 2007 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ESC Transactions covers recent significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Several keynote papers introduce and review the main topics. This is followed by contributed papers covering the latest research and implementation results.

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

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Author :
Publisher : Cambridge University Press
ISBN 13 : 1107434491
Total Pages : 227 pages
Book Rating : 4.1/5 (74 download)

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Book Synopsis Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs by : Jerry G. Fossum

Download or read book Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs written by Jerry G. Fossum and published by Cambridge University Press. This book was released on 2013-08-29 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Noise in Nanoscale Semiconductor Devices

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Author :
Publisher : Springer Nature
ISBN 13 : 3030375005
Total Pages : 724 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Noise in Nanoscale Semiconductor Devices by : Tibor Grasser

Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

Innovations in Electrical and Electronic Engineering

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Publisher : Springer Nature
ISBN 13 : 9811607494
Total Pages : 987 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Innovations in Electrical and Electronic Engineering by : Saad Mekhilef

Download or read book Innovations in Electrical and Electronic Engineering written by Saad Mekhilef and published by Springer Nature. This book was released on 2021-05-24 with total page 987 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected papers from the 2021 International Conference on Electrical and Electronics Engineering (ICEEE 2020), held on January 2–3, 2021. The book focuses on the current developments in various fields of electrical and electronics engineering, such as power generation, transmission and distribution; renewable energy sources and technologies; power electronics and applications; robotics; artificial intelligence and IoT; control, automation and instrumentation; electronics devices, circuits and systems; wireless and optical communication; RF and microwaves; VLSI; and signal processing. The book is a valuable resource for academics and industry professionals alike.

Silicon-on-insulator Technology and Devices XII

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Publisher : The Electrochemical Society
ISBN 13 : 9781566774611
Total Pages : 412 pages
Book Rating : 4.7/5 (746 download)

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Book Synopsis Silicon-on-insulator Technology and Devices XII by : George K. Celler

Download or read book Silicon-on-insulator Technology and Devices XII written by George K. Celler and published by The Electrochemical Society. This book was released on 2005 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Fourth Terminal

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Publisher : Springer Nature
ISBN 13 : 3030394964
Total Pages : 433 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis The Fourth Terminal by : Sylvain Clerc

Download or read book The Fourth Terminal written by Sylvain Clerc and published by Springer Nature. This book was released on 2020-04-25 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the advantages and challenges of Body-Biasing for integrated circuits and systems, together with the deployment of the design infrastructure needed to generate this Body-Bias voltage. These new design solutions enable state of the art energy efficiency and system flexibility for the latest applications, such as Internet of Things and 5G communications.

Silicon-on-insulator Technology and Devices XI

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566773751
Total Pages : 538 pages
Book Rating : 4.7/5 (737 download)

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Book Synopsis Silicon-on-insulator Technology and Devices XI by : Electrochemical Society. Meeting

Download or read book Silicon-on-insulator Technology and Devices XI written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Digitally-Assisted Analog and Analog-Assisted Digital IC Design

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Author :
Publisher : Cambridge University Press
ISBN 13 : 1107096103
Total Pages : 417 pages
Book Rating : 4.1/5 (7 download)

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Book Synopsis Digitally-Assisted Analog and Analog-Assisted Digital IC Design by : Xicheng Jiang

Download or read book Digitally-Assisted Analog and Analog-Assisted Digital IC Design written by Xicheng Jiang and published by Cambridge University Press. This book was released on 2015-07-23 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover cutting-edge techniques for next-generation integrated circuit design, and learn how to deliver improved speed, density, power, and cost.