Springer Handbook of Crystal Growth

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Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Springer Handbook of Crystal Growth by : Govindhan Dhanaraj

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Silicon Epitaxy

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Author :
Publisher : Elsevier
ISBN 13 : 0080541003
Total Pages : 514 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon Epitaxy by :

Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

SiC Materials and Devices

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Publisher : Academic Press
ISBN 13 : 0080864503
Total Pages : 435 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis SiC Materials and Devices by :

Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

SiC Power Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 9783540206668
Total Pages : 480 pages
Book Rating : 4.2/5 (66 download)

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Book Synopsis SiC Power Materials by : Zhe Chuan Feng

Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Handbook of Silicon Carbide Materials and Devices

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Author :
Publisher : CRC Press
ISBN 13 : 0429583958
Total Pages : 465 pages
Book Rating : 4.4/5 (295 download)

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Book Synopsis Handbook of Silicon Carbide Materials and Devices by : Zhe Chuan Feng

Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Amorphous and Crystalline Silicon Carbide IV

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Publisher : Springer Science & Business Media
ISBN 13 : 3642848044
Total Pages : 439 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis Amorphous and Crystalline Silicon Carbide IV by : Cary Y. Yang

Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y. Yang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.

Porous Silicon Carbide and Gallium Nitride

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Publisher : John Wiley & Sons
ISBN 13 : 9780470751824
Total Pages : 332 pages
Book Rating : 4.7/5 (518 download)

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Book Synopsis Porous Silicon Carbide and Gallium Nitride by : Randall M. Feenstra

Download or read book Porous Silicon Carbide and Gallium Nitride written by Randall M. Feenstra and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Amorphous and Crystalline Silicon Carbide II

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Publisher : Springer Science & Business Media
ISBN 13 : 3642750486
Total Pages : 238 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis Amorphous and Crystalline Silicon Carbide II by : Mahmud M. Rahman

Download or read book Amorphous and Crystalline Silicon Carbide II written by Mahmud M. Rahman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Advancing Silicon Carbide Electronics Technology I

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Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 249 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Vapour Growth and Epitaxy

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Publisher : Elsevier
ISBN 13 : 1483223574
Total Pages : 409 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Vapour Growth and Epitaxy by : G.W. Cullen

Download or read book Vapour Growth and Epitaxy written by G.W. Cullen and published by Elsevier. This book was released on 2013-09-03 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.

Novel Carbon Materials and Composites

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Publisher : John Wiley & Sons
ISBN 13 : 1119313392
Total Pages : 300 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Novel Carbon Materials and Composites by : Xin Jiang

Download or read book Novel Carbon Materials and Composites written by Xin Jiang and published by John Wiley & Sons. This book was released on 2019-05-28 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Connects knowledge about synthesis, properties, and applications of novel carbon materials and carbon-based composites This book provides readers with new knowledge on the synthesis, properties, and applications of novel carbon materials and carbon-based composites, including thin films of silicon carbide, carbon nitrite, and their related composites. It examines the direct bottom-up synthesis of the carbon-based composite systems and their potential applications, and discusses the growth mechanism of the composite structures. It features applications that range from mechanical, electronic, chemical, biochemical, medical, and environmental to functional devices. Novel Carbon Materials and Composites: Synthesis, Properties and Applications covers an overview of the synthesis, properties, and applications of novel carbon materials and composites. Especially, it covers everything from chemical vapor deposition of silicon carbide films and their electrochemical applications to applications of various novel carbon materials for the construction of supercapacitors to chemical vapor deposition of diamond/silicon carbide composite films to the covering and fabrication processes of nanodot composites. Looks at the recent progress and achievements in the fields of novel carbon materials and composites, including thin films of silicon carbide, carbon nitrite, and their related composites Discusses the many applications of carbon materials and composites Focuses on the hot topic of the fabrication of carbon-based composite materials and their abilities to extend the potential applications of carbon materials Published as a title in the new Wiley book series Nanocarbon Chemistry and Interfaces. Novel Carbon Materials and Composites: Synthesis, Properties and Applications is an important book for academic researchers and industrial scientists working in the fabrication and application of carbon materials and carbon-based composite materials and related fields.

Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566771559
Total Pages : 922 pages
Book Rating : 4.7/5 (715 download)

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Book Synopsis Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition by : Theodore M. Besmann

Download or read book Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition written by Theodore M. Besmann and published by The Electrochemical Society. This book was released on 1996 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide

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Publisher : John Wiley & Sons
ISBN 13 : 3527629068
Total Pages : 528 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Silicon Carbide by : Peter Friedrichs

Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Functional Properties of Advanced Engineering Materials and Biomolecules

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Publisher : Springer Nature
ISBN 13 : 3030622266
Total Pages : 778 pages
Book Rating : 4.0/5 (36 download)

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Book Synopsis Functional Properties of Advanced Engineering Materials and Biomolecules by : Felipe A. La Porta

Download or read book Functional Properties of Advanced Engineering Materials and Biomolecules written by Felipe A. La Porta and published by Springer Nature. This book was released on 2021-05-17 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book shows how a small toolbox of experimental techniques, physical chemistry concepts as well as quantum/classical mechanics and statistical methods can be used to understand, explain and even predict extraordinary applications of these advanced engineering materials and biomolecules. It highlights how improving the material foresight by design, including the fundamental understanding of their physical and chemical properties, can provide new technological levels in the future.

III-Nitride Based Light Emitting Diodes and Applications

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Publisher : Springer Science & Business Media
ISBN 13 : 9400758634
Total Pages : 434 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong

Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Advances in Crystal Growth Research

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Publisher : Elsevier
ISBN 13 : 0080526128
Total Pages : 435 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Advances in Crystal Growth Research by : Y. Furukawa

Download or read book Advances in Crystal Growth Research written by Y. Furukawa and published by Elsevier. This book was released on 2001-07-12 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this book is to provide a timely collection that highlights advances in current research of crystal growth ranging from fundamental aspects to current applications involving a wide range of materials. This book is published on the basis of lecture texts of the 11th International Summer School on Crystal Growth (ISSCG-11) to be held at Doshisha Retreat Center in Shiga Prefecture Japan, on July 24-29, 2001. This school is always associated with the International Conference of Crystal Growth (ICCG) series that have been held every three years since 1973; thus this school continues the tradition of the past 10 schools of crystal growth.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1904 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt: