Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Electronic Properties Of The 110 Surface Of Gallium Arsenide And Other Iii V Compounds full books in PDF, epub, and Kindle. Read online Electronic Properties Of The 110 Surface Of Gallium Arsenide And Other Iii V Compounds ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Arie Huijser
Publisher :
ISBN 13 :
Total Pages : 193 pages
Book Rating : 4.:/5 (636 download)
Download or read book Electronic Properties of the 110 surface of Gallium Arsenide and other III-V compounds written by Arie Huijser and published by . This book was released on 1979 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jingxi Sun
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.:/5 (89 download)
Download or read book Surface Chemistry and Surface Electronic Properties of Gallium Arsenide and Gallium Nitride written by Jingxi Sun and published by . This book was released on 2000 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Günter Weimann
Publisher : CRC Press
ISBN 13 : 9780750302951
Total Pages : 880 pages
Book Rating : 4.3/5 (29 download)
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : A. Kahn
Publisher :
ISBN 13 :
Total Pages : 20 pages
Book Rating : 4.:/5 (227 download)
Download or read book Free Surface Properties of III-V Compound Semiconductor Surfaces written by A. Kahn and published by . This book was released on 1980 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt: Studies of free compound semiconductor surfaces as well as gas-solid and metal-solid interaction are summarized. An experimental and theoretical analysis of the GaAs(110) surface reconstruction was conducted and applied to three additional compounds: InSb, InP and ZnTe. Attempts were made to relate the type and the magnitude of the surface reconstruction of these materials to the covalent-ionic character of the bonding. Knowledge of the atomic reconstructions of these surfaces was used to investigate the reactivity of semiconductor surfaces (GaAs(110)) with gas (oxygen) and metal (aluminum) atoms. These multicomponent systems are at the center of the author's essays to understand the chemistry of these surfaces and its relationship with their atomic reconstruction. Using Low Energy Electron Diffraction (LEED) as the principal tool to investigation, structural information has been obtained which correlates chemical and electronic information obtained by other surface analysis techniques. (Author).
Author :
Publisher :
ISBN 13 :
Total Pages : 1186 pages
Book Rating : 4.E/5 ( download)
Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1979 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sadao Adachi
Publisher : IET
ISBN 13 : 9780852965580
Total Pages : 354 pages
Book Rating : 4.9/5 (655 download)
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author :
Publisher :
ISBN 13 :
Total Pages : 128 pages
Book Rating : 4.:/5 (319 download)
Download or read book NBS Technical Note written by and published by . This book was released on 1964-10 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1460 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author : Kompa, Günter
Publisher : kassel university press GmbH
ISBN 13 : 3862195414
Total Pages : 762 pages
Book Rating : 4.8/5 (621 download)
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : National Institute of Standards and Technology (U.S.)
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.3/5 (243 download)
Download or read book Publications of the National Institute of Standards and Technology ... Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. Stutzmann
Publisher : Elsevier
ISBN 13 : 0444598839
Total Pages : 598 pages
Book Rating : 4.4/5 (445 download)
Download or read book Hydrogen in Semiconductors written by M. Stutzmann and published by Elsevier. This book was released on 2012-12-02 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Author : A D'andrea
Publisher : World Scientific
ISBN 13 : 9814556254
Total Pages : 470 pages
Book Rating : 4.8/5 (145 download)
Download or read book Materials For Photonic Devices written by A D'andrea and published by World Scientific. This book was released on 1991-11-15 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: The post-industrial societies' demand for more information processing and communication is a challenge to modern technology.This workshop is the first forum in Italy fully devoted to the advanced materials for opto-electronic and photonic device applications.The volume contains selected papers presented at the workshop and provide an updated overview by leading Italian public and private research groups on the state-of-the-art developments in crystal growth, tailoring and characterization of a large class of materials, namely semiconductors, glasses, polymers and organic molecules.Internationally recognized scientists on materials science have contributed to the workshop and their contributions have been reported in this volume.
Author :
Publisher :
ISBN 13 :
Total Pages : 222 pages
Book Rating : 4.X/5 (3 download)
Download or read book Research in Progress written by and published by . This book was released on with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1834 pages
Book Rating : 4.:/5 (319 download)
Download or read book Government Reports Annual Index written by and published by . This book was released on 1993 with total page 1834 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Donald T. Hawkins
Publisher : Springer Science & Business Media
ISBN 13 : 1468413872
Total Pages : 305 pages
Book Rating : 4.4/5 (684 download)
Download or read book Auger Electron Spectroscopy written by Donald T. Hawkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.
