Electronic Properties Of Doped Semiconductors

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Electronic Properties of Doped Semiconductors

Author : B.I. Shklovskii
Publisher : Springer Science & Business Media
ISBN 13 : 3662024039
Total Pages : 400 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Doped Semiconductors by : B.I. Shklovskii

Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Electronic Properties of Doped Semiconductors

Author : Boris Ionovič Šklovskij
Publisher :
ISBN 13 : 9780487129951
Total Pages : 388 pages
Book Rating : 4.1/5 (299 download)

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Book Synopsis Electronic Properties of Doped Semiconductors by : Boris Ionovič Šklovskij

Download or read book Electronic Properties of Doped Semiconductors written by Boris Ionovič Šklovskij and published by . This book was released on 1984 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Properties of Inhomogeneous Semiconductors

Author : A.Y. Shik
Publisher : CRC Press
ISBN 13 : 9782884490436
Total Pages : 180 pages
Book Rating : 4.4/5 (94 download)

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Book Synopsis Electronic Properties of Inhomogeneous Semiconductors by : A.Y. Shik

Download or read book Electronic Properties of Inhomogeneous Semiconductors written by A.Y. Shik and published by CRC Press. This book was released on 1995-10-06 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Properties of Semiconductor Interfaces

Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 3662069458
Total Pages : 269 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch

Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Properties of Impurity States in Superlattice Semiconductors

Author : C.Y. Fong
Publisher : Springer Science & Business Media
ISBN 13 : 1468455532
Total Pages : 350 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Properties of Impurity States in Superlattice Semiconductors by : C.Y. Fong

Download or read book Properties of Impurity States in Superlattice Semiconductors written by C.Y. Fong and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.

Nanomaterials

Author : Engg Kamakhya Prasad Ghatak
Publisher : Walter de Gruyter GmbH & Co KG
ISBN 13 : 3110609355
Total Pages : 432 pages
Book Rating : 4.1/5 (16 download)

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Book Synopsis Nanomaterials by : Engg Kamakhya Prasad Ghatak

Download or read book Nanomaterials written by Engg Kamakhya Prasad Ghatak and published by Walter de Gruyter GmbH & Co KG. This book was released on 2018-11-05 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work studies under different physical conditions the carrier contribution to elastic constants in heavily doped optoelectronic materials. In the presence of intense photon field the authors apply the Heisenberg Uncertainty Principle to formulate electron statistics. Many open research problems are discussed and numerous potential applications as quantum sensors and quantum cascade lasers are presented.

Rare Earth and Transition Metal Doping of Semiconductor Materials

Author : Volkmar Dierolf
Publisher : Woodhead Publishing
ISBN 13 : 008100060X
Total Pages : 470 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Rare Earth and Transition Metal Doping of Semiconductor Materials by : Volkmar Dierolf

Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Fundamentals of the Physics of Solids

Author : Jenö Sólyom
Publisher : Springer Science & Business Media
ISBN 13 : 3642045189
Total Pages : 747 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Fundamentals of the Physics of Solids by : Jenö Sólyom

Download or read book Fundamentals of the Physics of Solids written by Jenö Sólyom and published by Springer Science & Business Media. This book was released on 2010-12-09 with total page 747 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the third of a three-volume series written by the same author. It aims to deliver a comprehensive and self-contained account of the fundamentals of the physics of solids. In the presentation of the properties and experimentally observed phenomena together with the basic concepts and theoretical methods, it goes far beyond most classic texts. The essential features of various experimental techniques are also explained. This volume is devoted mostly to the discussion of the effects of electron—electron interaction beyond the one-electron approximation. The density-functional theory is introduced to account for correlation effects. The response to external perturbations is discussed in the framework of linear response theory. Landau’s Fermi-liquid theory is followed by the theory of Luttinger liquids. The subsequent chapters are devoted to electronic phases with broken symmetry: to itinerant magnetism, to spin- and charge-density waves and their realizations in quasi-one-dimensional materials, as well as to the microscopic theory of superconductivity. An overview is given of the physics of strongly correlated systems. The last chapter covers selected problems in the physics of disordered systems.

Dopants and Defects in Semiconductors

Author : Matthew D. McCluskey
Publisher : CRC Press
ISBN 13 : 9781138035195
Total Pages : 350 pages
Book Rating : 4.0/5 (351 download)

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Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey

Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization

Semiconductors

Author : Otfried Madelung
Publisher : Springer Science & Business Media
ISBN 13 : 3642188656
Total Pages : 691 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Semiconductors by : Otfried Madelung

Download or read book Semiconductors written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 691 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.

Semiconductors for Optoelectronics

Author : Naci Balkan
Publisher : Springer
ISBN 13 : 9783319449340
Total Pages : 0 pages
Book Rating : 4.4/5 (493 download)

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Book Synopsis Semiconductors for Optoelectronics by : Naci Balkan

Download or read book Semiconductors for Optoelectronics written by Naci Balkan and published by Springer. This book was released on 2021-10-12 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides in-depth knowledge about the fundamental physical properties of bulk and low dimensional semiconductors (LDS). It also explains their applications to optoelectronic devices. The book incorporates two major themes. The first theme, starts from the fundamental principles governing the classification of solids according to their electronic properties and leads to a detailed analysis of electronic band structure and electronic transport in solids. It then focuses on the electronic transport and optical properties of semiconductor compounds, size quantization and the analysis of abrupt p-n junctions where a full analysis of the fundamental properties of intrinsic and doped semiconductors is given. The second theme is device-oriented. It aims to provide the reader with understanding of the design, fabrication and operation of optoelectronic devices based on novel semiconductor materials, such as high-speed photo detectors, light emitting diodes, multi-mode and single-mode lasers and high efficiency solar cells. The book appeals to researchers and high-level undergraduate students.

Doping in III-V Semiconductors

Author : E. Fred Schubert
Publisher : E. Fred Schubert
ISBN 13 : 0986382639
Total Pages : pages
Book Rating : 4.9/5 (863 download)

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Book Synopsis Doping in III-V Semiconductors by : E. Fred Schubert

Download or read book Doping in III-V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures

Author : J.M. Chamberlain
Publisher : Springer
ISBN 13 :
Total Pages : 504 pages
Book Rating : 4.:/5 (45 download)

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Book Synopsis Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures by : J.M. Chamberlain

Download or read book Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures written by J.M. Chamberlain and published by Springer. This book was released on 1990 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focuses on several of the most active areas in modern semiconductor physics, including resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantized conductance, and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Actual and potential applications of low dimensional structur.

Electronic Materials Science

Author : Eugene A. Irene
Publisher : John Wiley & Sons
ISBN 13 : 9780471711636
Total Pages : 400 pages
Book Rating : 4.7/5 (116 download)

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Book Synopsis Electronic Materials Science by : Eugene A. Irene

Download or read book Electronic Materials Science written by Eugene A. Irene and published by John Wiley & Sons. This book was released on 2005-03-25 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough introduction to fundamental principles andapplications From its beginnings in metallurgy and ceramics, materials sciencenow encompasses such high- tech fields as microelectronics,polymers, biomaterials, and nanotechnology. Electronic MaterialsScience presents the fundamentals of the subject in a detailedfashion for a multidisciplinary audience. Offering a higher-leveltreatment than an undergraduate textbook provides, this textbenefits students and practitioners not only in electronics andoptical materials science, but also in additional cutting-edgefields like polymers and biomaterials. Readers with a basic understanding of physical chemistry or physicswill appreciate the text's sophisticated presentation of today'smaterials science. Instructive derivations of important formulae,usually omitted in an introductory text, are included here. Thisfeature offers a useful glimpse into the foundations of how thediscipline understands such topics as defects, phase equilibria,and mechanical properties. Additionally, concepts such asreciprocal space, electron energy band theory, and thermodynamicsenter the discussion earlier and in a more robust fashion than inother texts. Electronic Materials Science also features: * An orientation towards industry and academia drawn from theauthor's experience in both arenas * Information on applications in semiconductors, optoelectronics,photocells, and nanoelectronics * Problem sets and important references throughout * Flexibility for various pedagogical needs Treating the subject with more depth than any other introductorytext, Electronic Materials Science prepares graduate andupper-level undergraduate students for advanced topics in thediscipline and gives scientists in associated disciplines a clearreview of the field and its leading technologies.

Doping

Author : Lixin Yu
Publisher :
ISBN 13 : 9781626180970
Total Pages : 0 pages
Book Rating : 4.1/5 (89 download)

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Book Synopsis Doping by : Lixin Yu

Download or read book Doping written by Lixin Yu and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a powerful and efficient method for altering and controlling the properties and performance of materials, doping can enable properties that are innately present in a material. This book presents recent advances in the doping of organic electric materials and magnetism materials and reviews recent results also of doped naonocrystals and bulk materials. Doped bulk materials have been widely applied in many fields, such as optical display, communication, constructive materials, laser crystals, and biological systems. Doping has proven to be one of the most efficient techniques to adjust the electronic properties of organic semiconductors.

III-Nitride Semiconductors: Electrical, Structural and Defects Properties

Author : M.O. Manasreh
Publisher : Elsevier
ISBN 13 : 9780080534442
Total Pages : 464 pages
Book Rating : 4.5/5 (344 download)

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Book Synopsis III-Nitride Semiconductors: Electrical, Structural and Defects Properties by : M.O. Manasreh

Download or read book III-Nitride Semiconductors: Electrical, Structural and Defects Properties written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Delta-doping of Semiconductors

Author : E. F. Schubert
Publisher : Cambridge University Press
ISBN 13 : 9780521482882
Total Pages : 628 pages
Book Rating : 4.4/5 (828 download)

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Book Synopsis Delta-doping of Semiconductors by : E. F. Schubert

Download or read book Delta-doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.