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Electromigration In Ulsi Interconnects
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Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.
Book Synopsis Electromigration In Ulsi Interconnections by : Cher Ming Tan
Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis Electromigration in Ulsi Interconnects by : Cher Ming Tan
Download or read book Electromigration in Ulsi Interconnects written by Cher Ming Tan and published by . This book was released on 2007 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hierarchical Electromigration Reliability Diagnosis for ULSI Interconnects by : Chin-Chi Teng
Download or read book Hierarchical Electromigration Reliability Diagnosis for ULSI Interconnects written by Chin-Chi Teng and published by . This book was released on 1996 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a metallic interconnect is stressed under high current density. In recent years, the line width of ULSI interconnects has been shrunk into the submicron regime. This gives rise to serious concerns about electromigration-induced failures. To design an electromigration-reliable chip, a CAD tool that can provide the accurate worst-case electromigration reliability analysis is required. However, computing the worst-case electromigration reliability index, such as mean time-to-failure (MTF), for a single interconnect in a digital circuit is an NP-complete problem. It is even worse to consider all interconnects since so many interconnects exist in the entire circuit. In this research, a hierarchical electromigration reliability diagnosis method, which provides a feasible solution to this complicated problem, was proposed. The proposed electromigration diagnosis method uses two levels of diagnoses. The top of the hierarchy is an input pattern-independent electromigration diagnosis procedure. It can quickly identify those critical interconnects with potential electromigration reliability problems and the corresponding input patterns which cause the worst-case current stress to each critical interconnect; thus, the problem size of the worst-case electromigration diagnosis is significantly reduced and becomes tractable. Thereafter, designers can focus on the critical interconnects and feed those critical input patterns into a pattern-dependent electromigration-reliability simulation tool, iTEM, to compute the accurate electromigration-induced failure of the interconnect systems. One important feature of iTEM is that, in addition to the current density and interconnect geometry, it takes into account the steady-state temperature of every interconnect under the given operating condition. In a state-of-the-art chip, the temperature of the interconnect may result in a rise tens of degrees above the ambient due to Joule heating and heat conduction from the substrate. Neglecting the temperature effect on electromigration-induced failure can lead to intolerable prediction errors. Our electromigration diagnosis method combines the advantages of both the input pattern dependent and independent reliability diagnoses. This top-down approach not only handles large circuit layouts containing tens of thousands of transistors and interconnects even on a workstation, but also gives an accurate worst-case electromigration reliability estimation.
Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Book Synopsis Interconnect and Contact Metallization for ULSI by : G. S. Mathad
Download or read book Interconnect and Contact Metallization for ULSI written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling and Characterization of Electromigration Failures in IC Metallization Systems and Copper Metallization for ULSI Applications by : Jiang Tao
Download or read book Modeling and Characterization of Electromigration Failures in IC Metallization Systems and Copper Metallization for ULSI Applications written by Jiang Tao and published by . This book was released on 1995 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration in Cu Interconnects by : Dr. Arijit Roy
Download or read book Electromigration in Cu Interconnects written by Dr. Arijit Roy and published by LAP Lambert Academic Publishing. This book was released on 2011-07 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.
Book Synopsis Experimental Studies of Electromigration in Advanced Interconnect Systems for Future ULSI Technology by : Richard Frankovic
Download or read book Experimental Studies of Electromigration in Advanced Interconnect Systems for Future ULSI Technology written by Richard Frankovic and published by . This book was released on 1996 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by : Yosi Shacham-Diamand
Download or read book Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Book Synopsis Fundamentals of Electromigration-Aware Integrated Circuit Design by : Jens Lienig
Download or read book Fundamentals of Electromigration-Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Book Synopsis Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections by : Cher Ming Tan
Download or read book Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2011-03-28 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.
Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Book Synopsis Copper Interconnect Technology by : Tapan Gupta
Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Book Synopsis High-Speed VLSI Interconnections by : Ashok K. Goel
Download or read book High-Speed VLSI Interconnections written by Ashok K. Goel and published by John Wiley & Sons. This book was released on 2007-10-19 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.
Book Synopsis Graphene and VLSI Interconnects by : Cher-Ming Tan
Download or read book Graphene and VLSI Interconnects written by Cher-Ming Tan and published by CRC Press. This book was released on 2021-11-24 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.
