Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Electrical Characterization Of Ion Implanted 6h Silicon Carbide P N Junctions full books in PDF, epub, and Kindle. Read online Electrical Characterization Of Ion Implanted 6h Silicon Carbide P N Junctions ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Sharon E. Cole
Publisher :
ISBN 13 :
Total Pages : 234 pages
Book Rating : 4.:/5 (314 download)
Download or read book Electrical Characterization of Ion Implanted 6H Silicon Carbide P-N Junctions written by Sharon E. Cole and published by . This book was released on 1994 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian P. Morath (2LT, USAF.)
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (132 download)
Download or read book Electrical Characterization of Ion-implanted 4H-silicon Carbide written by Christian P. Morath (2LT, USAF.) and published by . This book was released on 1999 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian Morath
Publisher :
ISBN 13 : 9781423546870
Total Pages : 166 pages
Book Rating : 4.5/5 (468 download)
Download or read book Electrical Characterization of Ion-Implanted 4H-Silicon Carbide written by Christian Morath and published by . This book was released on 1999-03-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Author : Gary Lynn Harris
Publisher : IET
ISBN 13 : 9780852968703
Total Pages : 312 pages
Book Rating : 4.9/5 (687 download)
Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291850
Total Pages : 249 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Carl-Mikael Zetterling
Publisher : IET
ISBN 13 : 9780852969984
Total Pages : 202 pages
Book Rating : 4.9/5 (699 download)
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Author :
Publisher : Academic Press
ISBN 13 : 0080864503
Total Pages : 435 pages
Book Rating : 4.0/5 (88 download)
Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author : Wade H. Shafer
Publisher : Springer Science & Business Media
ISBN 13 : 1461303931
Total Pages : 427 pages
Book Rating : 4.4/5 (613 download)
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 427 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 39 (thesis year 1994) a total of 13,953 thesis titles from 21 Canadian and 159 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 39 reports theses submitted in 1994, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Author : Stephen E. Lempner
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (315 download)
Download or read book Electrical Characterization of 6H Crystalline Silicon Carbide written by Stephen E. Lempner and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Walter M. Gibson
Publisher :
ISBN 13 :
Total Pages : 726 pages
Book Rating : 4.E/5 ( download)
Download or read book Ion-solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 9781420049671
Total Pages : 1788 pages
Book Rating : 4.0/5 (496 download)
Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2019-07-17 with total page 1788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Author : National Aeronautics and Space Administration (NASA)
Publisher : Createspace Independent Publishing Platform
ISBN 13 : 9781722766245
Total Pages : 34 pages
Book Rating : 4.7/5 (662 download)
Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-11 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Author : Lai-Ching Ho
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (47 download)
Download or read book Electrical Characterization of SiC/Si Heterostructure by Ion Implantation of Carbon written by Lai-Ching Ho and published by . This book was released on 1996 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1508 pages
Book Rating : 4.0/5 ( download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973-04 with total page 1508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.3/5 (91 download)
Download or read book Proceedings written by and published by . This book was released on 1996 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 0203011503
Total Pages : 400 pages
Book Rating : 4.2/5 (3 download)
Download or read book VLSI Technology written by Wai-Kai Chen and published by CRC Press. This book was released on 2003-03-19 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including
