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Electrical And Optical Properties Of Indium Nitride And Indium Rich Nitrides Prepared By Molecular Beam Epitaxy For Opto Electronics Applications
Download Electrical And Optical Properties Of Indium Nitride And Indium Rich Nitrides Prepared By Molecular Beam Epitaxy For Opto Electronics Applications full books in PDF, epub, and Kindle. Read online Electrical And Optical Properties Of Indium Nitride And Indium Rich Nitrides Prepared By Molecular Beam Epitaxy For Opto Electronics Applications ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications by : Hai Lu
Download or read book Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications written by Hai Lu and published by . This book was released on 2003 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning by : Xiaodong Chen
Download or read book Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning written by Xiaodong Chen and published by . This book was released on 2006 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dilute Nitride Semiconductors by : Mohamed Henini
Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: - This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Book Synopsis Iii-nitride Semiconductor Materials by : Zhe Chuan Feng
Download or read book Iii-nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Book Synopsis Piezotronics and Piezo-Phototronics by : Zhong Lin Wang
Download or read book Piezotronics and Piezo-Phototronics written by Zhong Lin Wang and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fundamental principle of piezotronics and piezo-phototronics were introduced by Wang in 2007 and 2010, respectively. Due to the polarization of ions in a crystal that has non-central symmetry in materials, such as the wurtzite structured ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. Owing to the simultaneous possession of piezoelectricity and semiconductor properties, the piezopotential created in the crystal has a strong effect on the carrier transport at the interface/junction. Piezotronics is for devices fabricated using the piezopotential as a “gate” voltage to control charge carrier transport at a contact or junction. The piezo-phototronic effect uses the piezopotential to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detector, solar cell and LED. The functionality offered by piezotroics and piezo-phototronics are complimentary to CMOS technology. There is an effective integration of piezotronic and piezo-phototronic devices with silicon based CMOS technology. Unique applications can be found in areas such as human-computer interfacing, sensing and actuating in nanorobotics, smart and personalized electronic signatures, smart MEMS/NEMS, nanorobotics and energy sciences. This book introduces the fundamentals of piezotronics and piezo-phototronics and advanced applications. It gives guidance to researchers, engineers and graduate students.
Book Synopsis Nitride Semiconductors: Volume 482 by : Materials Research Society. Meeting
Download or read book Nitride Semiconductors: Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
Book Synopsis III-nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Book Synopsis Indium Nitride and Related Alloys by : Timothy David Veal
Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis The Physics and Chemistry of Carbides, Nitrides and Borides by : R. Freer
Download or read book The Physics and Chemistry of Carbides, Nitrides and Borides written by R. Freer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbides, nitrides and borides are families of related refractory materials. Traditionally they have been employed in applications associated with engineering ceramics where either high temperature strength or stability is of primary importance. In recent years there has been a growing awareness of the interesting electrical, thermal and optical properties exhibited by these materials, and the fact that many can be prepared as monolithic ceramics, single crystals and thin films. In practical terms carbides, nitrides and borides offer the prospect of a new generation of semiconductor materials, for example, which can function at very high temperatures in severe environmental conditions. However, as yet, we have only a limited understanding of the detailed physics and chemistry of the materials and how the preparation techniques influence the properties. Under the auspices of the NATO Science Committee an Advanced Research Workshop (ARW) was held on the Physics and Chemistry of Carbides, Nitrides and Borides (University of Manchester, 18-22 September, 1989) in order to assess progress to date and identify the most promising themes and materials for future research. An international group of 38 scientists considered developments in 5 main areas: The preparation of powders, monolithic ceramics, single crystals and thin films; Phase transformations, microstructure, defect structure and mass transport; Materials stability; Theoretical studies; Electrical, thermal and optical properties of bulk materials and thin films.
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductor Photonics by : Chua Soo-Jin
Download or read book Compound Semiconductor Photonics written by Chua Soo-Jin and published by CRC Press. This book was released on 2020-03-26 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Book Synopsis 2D Materials by : Chatchawal Wongchoosuk
Download or read book 2D Materials written by Chatchawal Wongchoosuk and published by BoD – Books on Demand. This book was released on 2019-10-09 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two-dimensional (2D) materials have attracted a great deal of attention in recent years due to their potential applications in gas/chemical sensors, healthcare monitoring, biomedicine, electronic skin, wearable sensing technology and advanced electronic devices. Graphene is one of today's most popular 2D nanomaterials alongside boron nitrides, molybdenum disulfide, black phosphorus and metal oxide nanosheets, all of which open up new opportunities for future devices. This book provides insights into models and theoretical backgrounds, important properties, characterizations and applications of 2D materials, including graphene, silicon nitride, aluminum nitride, ZnO thin film, phosphorene and molybdenum disulfide.
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
