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Direct Observation Of Threading Dislocations In Gan By High Resolution Z Contrast Imaging
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Book Synopsis Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena by : Kompa, Günter
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Book Synopsis Scanning Transmission Electron Microscopy by : Stephen J. Pennycook
Download or read book Scanning Transmission Electron Microscopy written by Stephen J. Pennycook and published by Springer Science & Business Media. This book was released on 2011-03-24 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning transmission electron microscopy has become a mainstream technique for imaging and analysis at atomic resolution and sensitivity, and the authors of this book are widely credited with bringing the field to its present popularity. Scanning Transmission Electron Microscopy(STEM): Imaging and Analysis will provide a comprehensive explanation of the theory and practice of STEM from introductory to advanced levels, covering the instrument, image formation and scattering theory, and definition and measurement of resolution for both imaging and analysis. The authors will present examples of the use of combined imaging and spectroscopy for solving materials problems in a variety of fields, including condensed matter physics, materials science, catalysis, biology, and nanoscience. Therefore this will be a comprehensive reference for those working in applied fields wishing to use the technique, for graduate students learning microscopy for the first time, and for specialists in other fields of microscopy.
Book Synopsis Impact of Electron and Scanning Probe Microscopy on Materials Research by : David G. Rickerby
Download or read book Impact of Electron and Scanning Probe Microscopy on Materials Research written by David G. Rickerby and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.
Download or read book Electron Microscopy written by and published by . This book was released on 1998 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Denshi Kembikyō Gakkai Shi; Kikan by :
Download or read book Denshi Kembikyō Gakkai Shi; Kikan written by and published by . This book was released on 2001 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Encyclopedia of Materials by : K. H. J. Buschow
Download or read book Encyclopedia of Materials written by K. H. J. Buschow and published by . This book was released on 2001 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accompanyind CR-ROM conrtains The Encyclopedia of Materials Science and Technology on a web access disc.
Book Synopsis Transmission Electron Microscopy by : C. Barry Carter
Download or read book Transmission Electron Microscopy written by C. Barry Carter and published by Springer. This book was released on 2016-08-24 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2000 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic-scale Characterization of Interfaces and Defects in Electronic Heterostructures by : Lianfeng Fu
Download or read book Atomic-scale Characterization of Interfaces and Defects in Electronic Heterostructures written by Lianfeng Fu and published by . This book was released on 2006 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defects and Diffusion in Semiconductors by :
Download or read book Defects and Diffusion in Semiconductors written by and published by . This book was released on 2005 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Imperfections in Crystalline Solids by : Wei Cai
Download or read book Imperfections in Crystalline Solids written by Wei Cai and published by Cambridge University Press. This book was released on 2016-09-15 with total page 535 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook provides students with a complete working knowledge of the properties of imperfections in crystalline solids. Readers will learn how to apply the fundamental principles of mechanics and thermodynamics to defect properties in materials science, gaining all the knowledge and tools needed to put this into practice in their own research. Beginning with an introduction to defects and a brief review of basic elasticity theory and statistical thermodynamics, the authors go on to guide the reader in a step-by-step way through point, line, and planar defects, with an emphasis on their structural, thermodynamic, and kinetic properties. Numerous end-of-chapter exercises enable students to put their knowledge into practice, and with solutions for instructors and MATLAB® programs available online, this is an essential text for advanced undergraduate and introductory graduate courses in crystal defects, as well as being ideal for self-study.
Book Synopsis The Blue Laser Diode by : Shuji Nakamura
Download or read book The Blue Laser Diode written by Shuji Nakamura and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1993, the author, Shuji Nakamura developed the first commercially available blue and green light-emitting diodes. Now he has made the most important breakthrough in solid state laser techniques to date - the first blue semiconductor laser based on GaN. Here, Dr. Nakamura discusses the physical concept and basic manufacturing technology of these new blue light-emitting and laser diodes. he shows how this represents a new era in commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. Moreover, Nakamura provides fascinating background information on the extraordinary realisation of an extremely successful concept of research and development. Of interest to researchers as well as engineers.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Microscopy of Semiconducting Materials by : A.G Cullis
Download or read book Microscopy of Semiconducting Materials written by A.G Cullis and published by CRC Press. This book was released on 2000-01-01 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots. This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Book Synopsis Optics in Our Time by : Mohammad D. Al-Amri
Download or read book Optics in Our Time written by Mohammad D. Al-Amri and published by Springer. This book was released on 2016-12-12 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light and light based technologies have played an important role in transforming our lives via scientific contributions spanned over thousands of years. In this book we present a vast collection of articles on various aspects of light and its applications in the contemporary world at a popular or semi-popular level. These articles are written by the world authorities in their respective fields. This is therefore a rare volume where the world experts have come together to present the developments in this most important field of science in an almost pedagogical manner. This volume covers five aspects related to light. The first presents two articles, one on the history of the nature of light, and the other on the scientific achievements of Ibn-Haitham (Alhazen), who is broadly considered the father of modern optics. These are then followed by an article on ultrafast phenomena and the invisible world. The third part includes papers on specific sources of light, the discoveries of which have revolutionized optical technologies in our lifetime. They discuss the nature and the characteristics of lasers, Solid-state lighting based on the Light Emitting Diode (LED) technology, and finally modern electron optics and its relationship to the Muslim golden age in science. The book’s fourth part discusses various applications of optics and light in today's world, including biophotonics, art, optical communication, nanotechnology, the eye as an optical instrument, remote sensing, and optics in medicine. In turn, the last part focuses on quantum optics, a modern field that grew out of the interaction of light and matter. Topics addressed include atom optics, slow, stored and stationary light, optical tests of the foundation of physics, quantum mechanical properties of light fields carrying orbital angular momentum, quantum communication, and Wave-Particle dualism in action.
Book Synopsis Elastic and Inelastic Scattering in Electron Diffraction and Imaging by : Zhong-lin Wang
Download or read book Elastic and Inelastic Scattering in Electron Diffraction and Imaging written by Zhong-lin Wang and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 461 pages. Available in PDF, EPUB and Kindle. Book excerpt: Elastic and inelastic scattering in transmission electron microscopy (TEM) are important research subjects. For a long time, I have wished to systematically summarize various dynamic theories associated with quantitative electron micros copy and their applications in simulations of electron diffraction patterns and images. This wish now becomes reality. The aim of this book is to explore the physics in electron diffraction and imaging and related applications for materials characterizations. Particular emphasis is placed on diffraction and imaging of inelastically scattered electrons, which, I believe, have not been discussed exten sively in existing books. This book assumes that readers have some preknowledge of electron microscopy, electron diffraction, and quantum mechanics. I anticipate that this book will be a guide to approaching phenomena observed in electron microscopy from the prospects of diffraction physics. The SI units are employed throughout the book except for angstrom (A), which is used occasionally for convenience. To reduce the number of symbols used, the Fourier transform of a real-space function P'(r), for example, is denoted by the same symbol P'(u) in reciprocal space except that r is replaced by u. Upper and lower limits of an integral in the book are (-co, co) unless otherwise specified. The (-co, co) integral limits are usually omitted in a mathematical expression for simplification. I very much appreciate opportunity of working with Drs. J. M. Cowley and J. C. H. Spence (Arizona State University), J.
