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Download or read book Dielectrics on Gallium Arsenide Using Silicon as a Sacrificial Layer: Formation Kinetics and Interface State Densities written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : W. F. Croydon
Publisher : Gordon & Breach Publishing Group
ISBN 13 :
Total Pages : 166 pages
Book Rating : 4.3/5 (91 download)
Download or read book Dielectric Films on Gallium Arsenide written by W. F. Croydon and published by Gordon & Breach Publishing Group. This book was released on 1981 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. J. Howes
Publisher :
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Author : Sadao Adachi
Publisher : IET
ISBN 13 : 9780852965580
Total Pages : 354 pages
Book Rating : 4.9/5 (655 download)
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author : Julio C. Costa
Publisher :
ISBN 13 :
Total Pages : 324 pages
Book Rating : 4.:/5 (319 download)
Download or read book Gallium Arsenide Surfaces with Thin Silicon Overlayers written by Julio C. Costa and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Young-Soon Kim
Publisher :
ISBN 13 : 9780530006475
Total Pages : 196 pages
Book Rating : 4.0/5 (64 download)
Download or read book Gallium Arsenide on Silicon Substrate written by Young-Soon Kim and published by . This book was released on 2019-05-31 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: semiconductor wafers Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Gallium Arsenide on Silicon Substrate" by Young-Soon Kim, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Author : Larry G. Meiners
Publisher :
ISBN 13 :
Total Pages : 147 pages
Book Rating : 4.:/5 (537 download)
Download or read book Dielectric-Semiconductor Interfaces of Gallium Arsenide and Indium Phosphide written by Larry G. Meiners and published by . This book was released on 1979 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: Capacitance-voltage measurements over a wide frequency range and surface photovoltage measurements were made on GaAs and InP MIS diodes. In GaAs, the surface potential could only be varied about 0.4 eV about a point 0.8-0.9 eV below the conduction band. In contrast, InP displayed a considerably smaller surface state density and the p-type material could be inverted. (Author).
Author : David K. Ferry
Publisher : Sams Technical Publishing
ISBN 13 :
Total Pages : 504 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. A. Hoffbauer
Publisher :
ISBN 13 :
Total Pages : 3 pages
Book Rating : 4.:/5 (228 download)
Download or read book Oxide Layer Growth on Gallium Arsenide Using a High Kinetic Energy Atomic Oxygen Beam written by M. A. Hoffbauer and published by . This book was released on 1992 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inherent theoretical advantages of GaAs electronic devices over those employing Si technology are severely limited in practice by the difficulty of forming passivating oxide layers. Problems encountered with oxide stoichiometry, crystallinity, interface defects, and chemical stability have been the subjects of numerous studies over the last 15 years. One of the major factors contributing to these problems is the differing rates of oxidation of Ga and As and the volatility of the As2O3 and As2O5 products at temperatures above -100 deg C.A number of different approaches to the growth of device-quality native oxides at low temperatures on GaAs have been attempted including: the use of ozone; simultaneous 02 and electron beam exposure ; photoexcitation of electron-hole'pairs in the GaAs, ; the use of more reactive oxidizers such as N2O; photochemical excitation of the gas-phase molecular species. addition of H2O to the excitation of 02 with a hot filament or a Tesla discharge; and plasma excitation of the 02. Although, many of these techniques can greatly increase the rate of formation of the first few monolayers of oxide, they are generally unsuccessful in the growth of>100 Angstrom thick oxide layers. Further, the oxidation reactions do not result in Ga or As in their highest formal oxidation state, and the resulting oxide is usually deficient in Ga or As. Recently, we have began investigating the oxidation of GaAs with a high kinetic energy beam of atomic oxygen and using x-ray photoemission (XPS) and Raman spectroscopies to characterize the thickness and stoichiometry of the oxide and to probe the oxide/GaAs interface.
Author : Thomas Raymond Ohnstein
Publisher :
ISBN 13 :
Total Pages : 382 pages
Book Rating : 4.:/5 (319 download)
Download or read book An Investigation of Silicon Nitride on Gallium Arsenide written by Thomas Raymond Ohnstein and published by . This book was released on 1982 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hugh Thomas
Publisher :
ISBN 13 :
Total Pages : 400 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide for Devices and Integrated Circuits written by Hugh Thomas and published by . This book was released on 1986 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Neil Sclater
Publisher :
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide IC Technology written by Neil Sclater and published by . This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 784 pages
Book Rating : 4.3/5 (91 download)
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1998 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hartwig W. Thim
Publisher : Institute of Physics Publishing (GB)
ISBN 13 :
Total Pages : 782 pages
Book Rating : 4.:/5 (45 download)
Download or read book Gallium Arsenide and Related Compounds, 1980 written by Hartwig W. Thim and published by Institute of Physics Publishing (GB). This book was released on 1981 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hsi-Jen James Yeh
Publisher :
ISBN 13 :
Total Pages : 266 pages
Book Rating : 4.:/5 (33 download)
Download or read book Integration of Gallium Arsenide on Silicon by Fluidic Self-assembly written by Hsi-Jen James Yeh and published by . This book was released on 1994 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Xiaoye Qin
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (913 download)
Download or read book Interface Study of High K Dielectric on Aluminium Gallium Nitride/gallium Nitride Heterostructure written by Xiaoye Qin and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN high electron mobility transistors are promising for high frequency and high power application due to their unique properties. The Al2 O3 and HfO2 are attractive materials which suppress the gate leakage current of AlGaN/GaN high electron mobility transistors. Since the interface quality of AlGaN and high k dielectrics are critical to the device performance, such as the threshold voltage and interface state density ( Dit ), it is therefore necessary to understand that the relationship between interface chemistry and device performance is fundamental for examining optimization strategies for device applications. Firstly, the impact of various chemical pretreatments on AlGaN surface is studied. Then the interfaces formed upon atomic layer deposition (ALD) of Al 2 O3 and HfO2 are investigated using in situ X-ray photoelectron spectroscopy (XPS). The impacts of ALD of Al2 O3 and HfO2 on native AlGaN are studied by capacitance voltage characterization. The XPS and device results uncover a high density of interface states. in situ N2 forming gas and O2 plasma pretreatments prior to ALD as optimization strategies are investigated using in situ XPS, LEED and C-V characterizations.
