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Defects In P Gan And Their Atomic Structure
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Book Synopsis Defects in P-GaN and Their Atomic Structure by : Z. Liliental-Weber
Download or read book Defects in P-GaN and Their Atomic Structure written by Z. Liliental-Weber and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reverse polarity compared to the matrix. It was proposed that lateral overgrowth of the cavities restores matrix polarity on the defect base. Exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 {+-} 0.2 {angstrom} displacement between the Ga sublattices of these two areas. A [1{und 1}00]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid is observed.
Book Synopsis Atomic Structure of Pyramidal Defects in GaN by :
Download or read book Atomic Structure of Pyramidal Defects in GaN written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The atomic structure of the characteristic defects (Mg-rich hexagonal pyramids) in p-doped bulk and MOCVD GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects, confirmed also with positron annihilation. The inside walls of the cavities were covered by GaN of reverse polarity compared to the matrix. Defects in bulk GaN:Mg were almost one order of magnitude larger than in thin films. An exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 ± 0.2 Å displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid was observed. Annealing of the MOCVD layers lead to slight increase of the defect size and an increase of the photoluminescence intensity. Positron annihilation confirms presence of vacancies of different sizes triggered by the Mg doping in as-grown samples and decrease of their concentration upon annealing at 900 and 1000 C.
Book Synopsis Atomic Structure of Defects in GaN by : Z. Liliental-Weber
Download or read book Atomic Structure of Defects in GaN written by Z. Liliental-Weber and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.
Book Synopsis Defects and Diffusion in Semiconductors by :
Download or read book Defects and Diffusion in Semiconductors written by and published by . This book was released on 2007 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Direct Observations of Atomic Structures of Defects in GaN by High-resolution Z-contrast STEM. by :
Download or read book Direct Observations of Atomic Structures of Defects in GaN by High-resolution Z-contrast STEM. written by and published by . This book was released on 1997 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN/(0001) Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {l_brace}10-10{r_brace} surface. The surfaces of the nanopipe walls are on {l_brace}10-10{r_brace} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z contrast image of the prismatic stacking fault confirms the results by conventional HRTEM.
Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Book Synopsis Physical Chemistry of Semiconductor Materials and Processes by :
Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Download or read book Diffusion and Defect Data written by and published by . This book was released on 1974 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Defects and Deep Levels for GaN Power Devices by : Tetsuo Narita
Download or read book Characterization of Defects and Deep Levels for GaN Power Devices written by Tetsuo Narita and published by . This book was released on 2020 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy. The identifi cations of their deep levels and extended defect structures are presented by comparing with reported fi rst-principles calculations. It reviews emerging technologies for defect characterizations using atom probe tomography, synchrotron x-ray diffraction topography in wafer scale, and multiphoton-excitation photoluminescence, which allows for the multidirectional characterization of structural defects.
Book Synopsis Identification of Defects in Semiconductors by :
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Book Synopsis Defects in Semiconductors 19 by : Gordon Davies
Download or read book Defects in Semiconductors 19 written by Gordon Davies and published by Trans Tech Publications Ltd. This book was released on 1997-12-11 with total page 1932 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Nitride Semiconductor Devices by : Hadis Morkoç
Download or read book Nitride Semiconductor Devices written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2013-04-16 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.
Book Synopsis Defects and Diffusion in Ceramics by :
Download or read book Defects and Diffusion in Ceramics written by and published by . This book was released on 2003 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of 2018 International Conference on Optoelectronics and Measurement by : Yingquan Peng
Download or read book Proceedings of 2018 International Conference on Optoelectronics and Measurement written by Yingquan Peng and published by Springer. This book was released on 2019-07-27 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers selected papers from the first International Conference on Optoelectronics and Measurement (ICOM 2018), held in Hangzhou, China on Oct 18-20, 2018. The proceedings focus on the latest developments in the fields of optics, photonics, optoelectronics, sensors, and related measurement technologies. Addressing hot topics in fibre optics, photo detectors and sensors, it also features illustrations of advanced device technologies, explains measurement principles, and shares cutting-edge scientific and technological findings. Accordingly, readers will gain essential insights into the forefront of these fields, and will find not only important technical data, but also new ideas to inspire their own future research.
Book Synopsis Computational Modeling of Inorganic Nanomaterials by : Stefan T. Bromley
Download or read book Computational Modeling of Inorganic Nanomaterials written by Stefan T. Bromley and published by CRC Press. This book was released on 2016-04-06 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computational Modeling of Inorganic Nanomaterials provides an accessible, unified introduction to a variety of methods for modeling inorganic materials as their dimensions approach the nanoscale. With contributions from a team of international experts, the book guides readers on choosing the most appropriate models and methods for studying the stru
