CMOS RF Modeling, Characterization and Applications

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Author :
Publisher : World Scientific
ISBN 13 : 9789810249052
Total Pages : 426 pages
Book Rating : 4.2/5 (49 download)

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Book Synopsis CMOS RF Modeling, Characterization and Applications by : M. Jamal Deen

Download or read book CMOS RF Modeling, Characterization and Applications written by M. Jamal Deen and published by World Scientific. This book was released on 2002 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Device Modeling for Analog and RF CMOS Circuit Design

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 0470864346
Total Pages : 306 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Device Modeling for Analog and RF CMOS Circuit Design by : Trond Ytterdal

Download or read book Device Modeling for Analog and RF CMOS Circuit Design written by Trond Ytterdal and published by John Wiley & Sons. This book was released on 2003-08-01 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Nanometer CMOS

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Author :
Publisher : CRC Press
ISBN 13 : 1466511702
Total Pages : 268 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Nanometer CMOS by : Juin J. Liou

Download or read book Nanometer CMOS written by Juin J. Liou and published by CRC Press. This book was released on 2010-02-28 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Characterization and Modeling of SOI RF Integrated Components

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Author :
Publisher : Presses univ. de Louvain
ISBN 13 : 9782930344393
Total Pages : 238 pages
Book Rating : 4.3/5 (443 download)

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Book Synopsis Characterization and Modeling of SOI RF Integrated Components by : Morin Dehan

Download or read book Characterization and Modeling of SOI RF Integrated Components written by Morin Dehan and published by Presses univ. de Louvain. This book was released on 2003 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.

CMOS Low Noise Amplifiers for Single and Multiband Applications: A Comprehensive Design Approach

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Author :
Publisher : Penerbit USM
ISBN 13 : 9674617655
Total Pages : 481 pages
Book Rating : 4.6/5 (746 download)

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Book Synopsis CMOS Low Noise Amplifiers for Single and Multiband Applications: A Comprehensive Design Approach by : Norlaili Mohd Noh, Farshad Eshghabadi, Arjuna Marzuki

Download or read book CMOS Low Noise Amplifiers for Single and Multiband Applications: A Comprehensive Design Approach written by Norlaili Mohd Noh, Farshad Eshghabadi, Arjuna Marzuki and published by Penerbit USM. This book was released on 2023-10-11 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive knowledge, aimed at practicing integrated circuit design engineer or researcher, to learn and design a low noise amplifier (LNA) for single and multiband applications. The content is structured in a way so that even a beginner can follow the design method easily. This book features the following characteristics: different types of LNA designs (with key building blocks) are discussed, and detailed analysis is given for each LNA design, which covers from the fundamental and principal knowledge to the justification of the design approach. Detailed design approaches are using 180 nm and 130nm CMOS technologies, purposely presented in this manner to give exposure to the design of LNA under different technologies. The LNAs in this book are designed for GSM, WCDMA and WLAN standards, but the same method can be used for other frequencies of operation. Comprehensive analyses on the extreme or corner condition effects are highlighted. Besides, detailed derivation of equations relating to the parameters of the LNA’s performance metrics help LNA designers in understanding how the performance metrics of the LNA can be optimized to meet the desired specification. Electromagnetic analyses using Sonnet, an electromagnetic tool able to replace the conventional post-layout simulation with resistance and capacitance parasitic extraction for more accurate frequency performance prediction are presented. The electromagnetic method is proposed to be used in the LNA design as it can accurately predict the LNA’s performance before tape-out for first-pass fabrication. MATLAB codes are provided to generate important S-parameters and noise figure values.

Design of CMOS RF Integrated Circuits and Systems

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Author :
Publisher : World Scientific Publishing Company
ISBN 13 : 9813107472
Total Pages : 360 pages
Book Rating : 4.8/5 (131 download)

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Book Synopsis Design of CMOS RF Integrated Circuits and Systems by : Kiat Seng Yeo

Download or read book Design of CMOS RF Integrated Circuits and Systems written by Kiat Seng Yeo and published by World Scientific Publishing Company. This book was released on 2010-03-24 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Microwave De-embedding

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Author :
Publisher : Academic Press
ISBN 13 : 0124045928
Total Pages : 481 pages
Book Rating : 4.1/5 (24 download)

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Book Synopsis Microwave De-embedding by : Giovanni Crupi

Download or read book Microwave De-embedding written by Giovanni Crupi and published by Academic Press. This book was released on 2013-11-09 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

Advances in Imaging and Electron Physics

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Author :
Publisher : Academic Press
ISBN 13 : 0123946360
Total Pages : 521 pages
Book Rating : 4.1/5 (239 download)

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Book Synopsis Advances in Imaging and Electron Physics by :

Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 2012-11-01 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. Contributions from leading authorities Informs and updates on all the latest developments in the field

GaN-Based Materials and Devices

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Author :
Publisher : World Scientific
ISBN 13 : 9814482692
Total Pages : 300 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis GaN-Based Materials and Devices by : M S Shur

Download or read book GaN-Based Materials and Devices written by M S Shur and published by World Scientific. This book was released on 2004-05-07 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. Contents:Materials:Materials Properties of Nitrides. Summary (S L Rumyantsev et al.)Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy (A M Roskowski et al.)Cracking of GaN Films (E V Etzkorn & D R Clarke)Transport and Noise Properties:Quasi-Ballistic and Overshoot Transport in Group III-Nitrides (K W Kim et al.)High Field Transport in AIN (R Collazo et al.)Generation-Recombination Noise in GaN-Based Devices (S L Rumyantsev et al.)Devices:Insulated Gate III-N Heterostructure Field-Effect Transistors (G Simin et al.)High Voltage AlGaN/GaN Heterojunction Transistors (L S McCarthy et al.)Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching (Y Gao et al.)and other papers Readership: Undergraduates, graduate students, academics, researchers and practitioners in semiconductor science and materials engineering. Keywords:Nitrides;Power Switches;Substrates;Device Fabrication;TransistorsKey Features:Unique feature: extensive coverage of issues ranging from materials growth and characterization to devices

Precision Measurement of Microwave Thermal Noise

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1119910099
Total Pages : 180 pages
Book Rating : 4.1/5 (199 download)

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Book Synopsis Precision Measurement of Microwave Thermal Noise by : James Randa

Download or read book Precision Measurement of Microwave Thermal Noise written by James Randa and published by John Wiley & Sons. This book was released on 2022-11-22 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Precision Measurement of Microwave Comprehensive resource covering the foundations and analysis of precision noise measurements with a detailed treatment of their uncertainties Precision Measurement of Microwave Thermal Noise presents the basics of precise measurements of thermal noise at microwave frequencies and guides readers through how to evaluate the uncertainties in such measurement. The focus is on measurement methods used at the U.S. National Institute of Standards and Technology (NIST), but the general principles and methods are useful in a wide range of applications. Readers will learn how to perform accurate microwave noise measurements using the respected author’s expertise of calculations to aid understanding of the challenges and solutions. The text covers the background required for the analysis of the measurements and the standards employed to calibrate radiofrequency and microwave radiometers. It also covers measurements of noise temperature (power) and the noise characteristics of amplifiers and transistors. In addition to the usual room-temperature two-port devices, cryogenic devices and multiport amplifiers are also discussed. Finally, the connection of these lab-based measurements to remote-sensing measurement (especially from space) is considered, and possible contributions of the lab-based measurements to remote-sensing applications are discussed. Specific topics and concepts covered in the text include: Noise-temperature standards, covering ambient standards, hot (oven) standards, cryogenic standards, and other standards and noise sources Amplifier noise, covering definition of noise parameters, measurement of noise parameters, uncertainty analysis for noise-parameter measurements, and simulations and strategies On-wafer noise measurements, covering on-wafer microwave formalism, noise temperature, on-wafer noise-parameter measurements, and uncertainties Multiport amplifiers, covering formalism and noise matrix, definition of noise figure for multiports, and degradation of signal-to-noise ratio Containing some introductory material, Precision Measurement of Microwave Thermal Noise is an invaluable resource on the subject for advanced students and all professionals working in (or entering) the field of microwave noise measurements, be it in a standards lab, a commercial lab, or academic research.

Linear CMOS RF Power Amplifiers

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Publisher :
ISBN 13 : 9781461486589
Total Pages : 200 pages
Book Rating : 4.4/5 (865 download)

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Book Synopsis Linear CMOS RF Power Amplifiers by : Hector Solar Ruiz

Download or read book Linear CMOS RF Power Amplifiers written by Hector Solar Ruiz and published by . This book was released on 2013-09-30 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modeling and Characterization of RF and Microwave Power FETs

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Author :
Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Modeling and Characterization of RF and Microwave Power FETs by : Peter Aaen

Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Advanced Device Modeling and Simulation

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Author :
Publisher : World Scientific
ISBN 13 : 9814485012
Total Pages : 216 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Advanced Device Modeling and Simulation by : Tibor Grasser

Download or read book Advanced Device Modeling and Simulation written by Tibor Grasser and published by World Scientific. This book was released on 2003-10-17 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods. Contents:Modeling Electron Transport in MOSFET Devices: Evolution and State of the Art (A Abramo)Particle Models for Device Simulation (H Kosina & M Nedjalkov)Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach (C Ringhofer et al.)Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrödinger and Boltzmann System of Equations (N Goldsman & C-K Huang)Hydrodynamic Modeling of RF Noise for Silicon-Based Devices (C Jungemann et al.)Carbon Nanotubes as a Perfectly Conducting Cylinder (T Ando)Hot Carrier Effects Within Macroscopic Transport Models (T Grasser et al.) Readership: Upper level undergraduates, graduate students, academics/lecturers, researchers and industrialists in microelectronics and semiconductor science. Keywords:Device Simulation;Monte Carlo Method;Wigner-Boltzmann Equation;Spherical Harmonics;Carbon Nanotubes;Quantum Effects

Electronics

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Author :
Publisher : CRC Press
ISBN 13 : 1000089061
Total Pages : 440 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Electronics by : Michael Olorunfunmi Kolawole

Download or read book Electronics written by Michael Olorunfunmi Kolawole and published by CRC Press. This book was released on 2020-06-15 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives clear explanations of the technical aspects of electronics engineering from basic classical device formulations to the use of nanotechnology to develop efficient quantum electronic systems. As well as being up to date, this book provides a broader range of topics than found in many other electronics books. This book is written in a clear, accessible style and covers topics in a comprehensive manner. This book’s approach is strongly application-based with key mathematical techniques introduced, helpful examples used to illustrate the design procedures, and case studies provided where appropriate. By including the fundamentals as well as more advanced techniques, the author has produced an up-to-date reference that meets the requirements of electronics and communications students and professional engineers. Features Discusses formulation and classification of integrated circuits Develops a hierarchical structure of functional logic blocks to build more complex digital logic circuits Outlines the structure of transistors (bipolar, JFET, MOSFET or MOS, CMOS), their processing techniques, their arrangement forming logic gates and digital circuits, optimal pass transistor stages of buffered chain, sources and types of noise, and performance of designed circuits under noisy conditions Explains data conversion processes, choice of the converter types, and inherent errors Describes electronic properties of nanomaterials, the crystallites’ size reduction effect, and the principles of nanoscale structure fabrication Outlines the principles of quantum electronics leading to the development of lasers, masers, reversible quantum gates, and circuits and applications of quantum cells and fabrication methods, including self-assembly (quantum-dot cellular automata) and tunneling (superconducting circuits), and describes quantum error-correction techniques Problems are provided at the end of each chapter to challenge the reader’s understanding

RF CMOS Oscillators for Modern Wireless Applications

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Author :
Publisher : CRC Press
ISBN 13 : 1000794431
Total Pages : 237 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis RF CMOS Oscillators for Modern Wireless Applications by : Masoud Babaie

Download or read book RF CMOS Oscillators for Modern Wireless Applications written by Masoud Babaie and published by CRC Press. This book was released on 2022-09-01 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include:  Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMOS

Design of CMOS RF Integrated Circuits and Systems

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Author :
Publisher : World Scientific
ISBN 13 : 981427156X
Total Pages : 358 pages
Book Rating : 4.8/5 (142 download)

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Book Synopsis Design of CMOS RF Integrated Circuits and Systems by : Kiat Seng Yeo

Download or read book Design of CMOS RF Integrated Circuits and Systems written by Kiat Seng Yeo and published by World Scientific. This book was released on 2010 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Power Distribution Networks with On-Chip Decoupling Capacitors

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 0387716017
Total Pages : 516 pages
Book Rating : 4.3/5 (877 download)

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Book Synopsis Power Distribution Networks with On-Chip Decoupling Capacitors by : Mikhail Popovich

Download or read book Power Distribution Networks with On-Chip Decoupling Capacitors written by Mikhail Popovich and published by Springer Science & Business Media. This book was released on 2007-10-08 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides insight into the behavior and design of power distribution systems for high speed, high complexity integrated circuits. Also presented are criteria for estimating minimum required on-chip decoupling capacitance. Techniques and algorithms for computer-aided design of on-chip power distribution networks are also described; however, the emphasis is on developing circuit intuition and understanding the principles that govern the design and operation of power distribution systems.