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Characterization Of Ionizing Radiation Effects In Lateral Pnp Bipolar Junction Transistors And Identification Of Gate Control As A Hardening Approach
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Book Synopsis Characterization of Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors and Identification of Gate Control as a Hardening Approach by : Hugh James Barnaby
Download or read book Characterization of Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors and Identification of Gate Control as a Hardening Approach written by Hugh James Barnaby and published by . This book was released on 1995 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Separating Radiation and Thermal Effects on Lateral PNP Bipolar Junction Transistors Operating in the Space Environment by : Michael J. Campola
Download or read book Separating Radiation and Thermal Effects on Lateral PNP Bipolar Junction Transistors Operating in the Space Environment written by Michael J. Campola and published by . This book was released on 2011 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1977 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :United States. Energy Research and Development Administration. Technical Information Center Publisher : ISBN 13 : Total Pages :1680 pages Book Rating :4.3/5 (129 download)
Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration. Technical Information Center
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration. Technical Information Center and published by . This book was released on 1977 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1977-03 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effects of Emitter-tied Field Plates on Lateral PNP Ionizing Radiation Response by :
Download or read book The Effects of Emitter-tied Field Plates on Lateral PNP Ionizing Radiation Response written by and published by . This book was released on 1998 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation response comparisons of lateral PNP bipolar technologies reveal that device hardening may be achieved by extending the emitter contact over the active base. The emitter-tied field plate suppresses recombination of carriers with interface traps.
Book Synopsis Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors by : Blayne S. Tolleson
Download or read book Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors written by Blayne S. Tolleson and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT) and oxide defects (NOT) which are caused by ionizing radiation exposure. Existing models that attempt to predict this excess base current response are derived and discussed in detail. An improved model is proposed which modifies the existing model and incorporates the impact of charged interface trap defects on radiation-induced excess base current. The improved accuracy of the new model in predicting excess base current response in lateral PNP (LPNP) is then verified with Technology Computer Aided Design (TCAD) simulations. Finally, experimental data and compared with the improved and existing model calculations.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1977 with total page 1012 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Techniques for Screening Bipolar Transistor Degradation Due to Ionizing Radiation by : W. C. Bruncke
Download or read book Techniques for Screening Bipolar Transistor Degradation Due to Ionizing Radiation written by W. C. Bruncke and published by . This book was released on 1974 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two methods for screening bipolar parameter degradation due to exposure to ionizing radiation were explored. These were: the use of a scanning electron microscope (SEM) as a controlled simulator of a Co60 source irradiation and the use of surface sensitive test devices to assess the potential hardness of bipolar oxides. The goal was the development of screening techniques which could be applied in a production environment to evaluate hardness to ionizing radiation while the devices were in slice form. The technique of using the SEM as a simulator for a Co60 source, delivering a total ionizing dose, was shown to be feasible. The second screening method involved the design and implementation of a test bar which placed a number of experimental devices on a common die with two p-n-p transistors. The structures on the test bar which were to characterize the oxides and the Si-SiO2 interface of the transistor pair included dated diodes, a p-n-p tetrode, MOS capacitors, and an N-channel MOSFET. Pre-irradiation characterization of the oxides was explored as a measure of post-irradiation degradation of the p-n-p transistors. The data presented here shows only limited success in the use of this method as a screen.
Book Synopsis Separation of Ionization and Displacement Damage Using Gate-controlled Lateral PNP Bipolar Transistors by : Dennis Ray Ball
Download or read book Separation of Ionization and Displacement Damage Using Gate-controlled Lateral PNP Bipolar Transistors written by Dennis Ray Ball and published by . This book was released on 2003 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mechanisms of Ionizing-radiation-induced Gain Degradation in Lateral PNP BJTs by :
Download or read book Mechanisms of Ionizing-radiation-induced Gain Degradation in Lateral PNP BJTs written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1976 with total page 958 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis of the Radiation Induced Degradation in Lateral Pnp Transistors by : Leslie John Palkuti
Download or read book Analysis of the Radiation Induced Degradation in Lateral Pnp Transistors written by Leslie John Palkuti and published by . This book was released on 1971 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterisation of Commercial Silicon NPN Bipolar Junction Transistors Subjected to Neutron and Gamma Radiation by : Min Oo Myo
Download or read book Electrical Characterisation of Commercial Silicon NPN Bipolar Junction Transistors Subjected to Neutron and Gamma Radiation written by Min Oo Myo and published by . This book was released on 2014 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronics components such as bipolar junction transistors (BJTs), diodes etc; which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This research examines the effect of neutron radiation from pneumatic transfer system (PTS) at TRIGA Mark II reactor and gamma radiation from Co-60 on silicon NPN bipolar junction transistors. Moreover, the combination of neutron and gamma radiation on devices was performed. Analyses on irradiated transistors were performed in terms of electrical characterization such as current gain, collector current (IC) and base current (IB). Experimental results showed that the current gain degraded significantly after neutron and gamma radiation. Significant current gain degradation is observed on the devices irradiated with neutron and gamma radiation. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by increasing recombination current between base and emitter depletion region.
Book Synopsis Microcircuit Reliability Bibliography by :
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1974 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose-rates by :
Download or read book Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose-rates written by and published by . This book was released on 2000 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: To optimally design circuits for operation at high intensities of ionizing radiation, and to accurately predict their a behavior under radiation, precise device models are needed that include both stationary and dynamic effects of such radiation. Depending on the type and intensity of the ionizing radiation, different degradation mechanisms, such as photoelectric effect, total dose effect, or single even upset might be dominant. In this paper, the authors consider the photoelectric effect associated with the generation of electron-hole pairs in the semiconductor. The effects of low radiation intensity on p-II diodes and bipolar junction transistors (BJTs) were described by low-injection theory in the classical paper by Wirth and Rogers. However, in BJTs compatible with modem integrated circuit technology, high-resistivity regions are often used to enhance device performance, either as a substrate or as an epitaxial layer such as the low-doped n-type collector region of the device. Using low-injection theory, the transient response of epitaxial BJTs was discussed by Florian et al., who mainly concentrated on the effects of the Hi-Lo (high doping - low doping) epilayer/substrate junction of the collector, and on geometrical effects of realistic devices. For devices with highly resistive regions, the assumption of low-level injection is often inappropriate, even at moderate radiation intensities, and a more complete theory for high-injection levels was needed. In the dynamic photocurrent model by Enlow and Alexander. p-n junctions exposed to high-intensity radiation were considered. In their work, the variation of the minority carrier lifetime with excess carrier density, and the effects of the ohmic electric field in the quasi-neutral (q-n) regions were included in a simplified manner. Later, Wunsch and Axness presented a more comprehensive model for the transient radiation response of p-n and p-i-n diode geometries. A stationary model for high-level injection in p-n junctions was developed by Isaque et al. They used a more complete ambipolar transport equation, which included the dependencies of the transport parameters (ambipolar diffusion constant, mobility, and recombination rate) on the excess minority carrier concentration. The expression used for the recombination rate was that of Shockley-Reed-Hall (SRH) recombination which is dominant for low to mid-level radiation intensities. However, at higher intensities, Auger recombination becomes important eventually dominant. The complete ambipolar transport equation including the complicated dependence of transport parameters on the radiation intensity, cannot be solved analytically. This solution is obtained for each of the regimes where a given recombination mechanism dominates, and then by joining these solutions using appropriate smoothing functions. This approach allows them to develop a BJT model accounting for the photoelectric effect of the ionizing radiation that can be implemented in SPICE.
Book Synopsis DC Characteristics of PNP Lateral Bipolar Transistor at High Injection Levels by : Omid Hashemipour
Download or read book DC Characteristics of PNP Lateral Bipolar Transistor at High Injection Levels written by Omid Hashemipour and published by . This book was released on 1987 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
