Characterization Of Electronically Active Defects In Hafnium Dioxide High Kappa Gate Dielectrics

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Defects in HIgh-k Gate Dielectric Stacks

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 1402043678
Total Pages : 495 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-02-15 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Defects in HIgh-k Gate Dielectric Stacks

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 9781402043666
Total Pages : 508 pages
Book Rating : 4.0/5 (436 download)

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Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Development and Characterization of Ultrathin Hafnium Titanates as High Permittivity Gate Insulators

Author : Min Li
Publisher :
ISBN 13 :
Total Pages : 446 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Development and Characterization of Ultrathin Hafnium Titanates as High Permittivity Gate Insulators by : Min Li

Download or read book Development and Characterization of Ultrathin Hafnium Titanates as High Permittivity Gate Insulators written by Min Li and published by . This book was released on 2005 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Journal of the Electrochemical Society

Author :
Publisher :
ISBN 13 :
Total Pages : 982 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Journal of the Electrochemical Society by :

Download or read book Journal of the Electrochemical Society written by and published by . This book was released on 2003 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High k Gate Dielectrics

Author : Michel Houssa
Publisher : CRC Press
ISBN 13 : 1420034146
Total Pages : 614 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis High k Gate Dielectrics by : Michel Houssa

Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

Carrier mobility in advanced channel materials using alternative gate dielectrics

Author : Eylem Durgun Özben
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893369414
Total Pages : 123 pages
Book Rating : 4.8/5 (933 download)

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Book Synopsis Carrier mobility in advanced channel materials using alternative gate dielectrics by : Eylem Durgun Özben

Download or read book Carrier mobility in advanced channel materials using alternative gate dielectrics written by Eylem Durgun Özben and published by Forschungszentrum Jülich. This book was released on 2014-03-20 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Metal Impurities in Silicon- and Germanium-Based Technologies

Author : Cor Claeys
Publisher : Springer
ISBN 13 : 3319939254
Total Pages : 464 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis Metal Impurities in Silicon- and Germanium-Based Technologies by : Cor Claeys

Download or read book Metal Impurities in Silicon- and Germanium-Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

High-k Gate Dielectric Materials

Author : Niladri Pratap Maity
Publisher : CRC Press
ISBN 13 : 1000527441
Total Pages : 259 pages
Book Rating : 4.0/5 (5 download)

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Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity

Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Germanium-Based Technologies

Author : Cor Claeys
Publisher : Elsevier
ISBN 13 : 008047490X
Total Pages : 476 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Germanium-Based Technologies by : Cor Claeys

Download or read book Germanium-Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications

Polymer Nanocomposite Materials

Author : Ye Zhou
Publisher : John Wiley & Sons
ISBN 13 : 3527826505
Total Pages : 304 pages
Book Rating : 4.5/5 (278 download)

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Book Synopsis Polymer Nanocomposite Materials by : Ye Zhou

Download or read book Polymer Nanocomposite Materials written by Ye Zhou and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymer Nanocomposite Materials Discover an authoritative overview of zero-, one-, and two-dimensional polymer nanomaterials Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices delivers an original and insightful treatment of polymer nanocomposite applications in energy, information, and biotechnology. The book systematically reviews the preparation and characterization of polymer nanocomposites from zero-, one-, and two-dimensional nanomaterials. The two distinguished editors have selected resources that thoroughly explore the applications of polymer nanocomposites in energy, information, and biotechnology devices like sensors, solar cells, data storage devices, and artificial synapses. Academic researchers and professional developers alike will enjoy one of the first books on the subject of this environmentally friendly and versatile new technology. Polymer Nanocomposite Materials discusses challenges associated with the devices and materials, possible strategies for future directions of the technology, and the possible commercial applications of electronic devices built on these materials. Readers will also benefit from the inclusion of: A thorough introduction to the fabrication of conductive polymer composites and their applications in sensors An exploration of biodegradable polymer nanocomposites for electronics and polymer nanocomposites for photodetectors Practical discussions of polymer nanocomposites for pressure sensors and the application of polymer nanocomposites in energy storage devices An examination of functional polymer nanocomposites for triboelectric nanogenerators and resistive switching memory Perfect for materials scientists and polymer chemists, Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices will also earn a place in the libraries of sensor developers, electrical engineers, and other professionals working in the sensor industry seeking an authoritative one-stop reference for nanocomposite applications.

Thermionic Electron Sources

Author : George A. Haas
Publisher :
ISBN 13 :
Total Pages : 38 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Thermionic Electron Sources by : George A. Haas

Download or read book Thermionic Electron Sources written by George A. Haas and published by . This book was released on 1961 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: A survey of the emission characteristics of modern thermionic electron sources is presented. In addition to a discussion of recent advances among the more commonly used emitters such as oxide cathodes, thoriated cathodes, and metal c thodes, a tabulation of the thermionic properties of over one hundred various new matrix and refractory-coated cathodes is given. (Author).

Physics of Carbon Nanotube Devices

Author : Francois Leonard
Publisher : William Andrew
ISBN 13 : 0815519680
Total Pages : 411 pages
Book Rating : 4.8/5 (155 download)

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Book Synopsis Physics of Carbon Nanotube Devices by : Francois Leonard

Download or read book Physics of Carbon Nanotube Devices written by Francois Leonard and published by William Andrew. This book was released on 2008-11-18 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Possibly the most impactful material in the nanotechnology arena, carbon nanotubes have spurred a tremendous amount of scientific research and development. Their superior mechanical and chemical robustness makes them easily manipulable and allows for the assembly of various types of devices, including electronic, electromechanical, opto-electronic and sensing devices.In the field of nanotube devices, however, concepts that describe the properties of conventional devices do not apply. Carbon nanotube devices behave much differently from those using traditional materials, and offer entirely new functionality. This book – designed for researchers, engineers and graduate students alike – bridges the experimental and theoretical aspects of carbon nanotube devices. It emphasizes and explains the underlying physics that govern their working principles, including applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. Many of the aspects discussed here differ significantly from those learned in books or traditional materials, and are essential for the future development of carbon nanotube technology.• Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles • Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. • Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. • Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.* Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles * Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing.* Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission* Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.

Materials Fundamentals of Gate Dielectrics

Author : Alexander A. Demkov
Publisher : Springer
ISBN 13 : 9789048167869
Total Pages : 0 pages
Book Rating : 4.1/5 (678 download)

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Book Synopsis Materials Fundamentals of Gate Dielectrics by : Alexander A. Demkov

Download or read book Materials Fundamentals of Gate Dielectrics written by Alexander A. Demkov and published by Springer. This book was released on 2011-02-03 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy. Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given.

Internal Photoemission Spectroscopy

Author : Valeri V. Afanas'ev
Publisher : Elsevier
ISBN 13 : 0080999301
Total Pages : 404 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev

Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. - First complete model description of the internal photoemission phenomena - Overview of the most reliable energy barrier determination procedures and trap characterization methods - Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Materials for Information Technology

Author : Ehrenfried Zschech
Publisher : Springer Science & Business Media
ISBN 13 : 1846282357
Total Pages : 498 pages
Book Rating : 4.8/5 (462 download)

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Book Synopsis Materials for Information Technology by : Ehrenfried Zschech

Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

Noise in Nanoscale Semiconductor Devices

Author : Tibor Grasser
Publisher : Springer Nature
ISBN 13 : 3030375005
Total Pages : 724 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Noise in Nanoscale Semiconductor Devices by : Tibor Grasser

Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

Ferroelectricity in Doped Hafnium Oxide

Author : Uwe Schroeder
Publisher : Woodhead Publishing
ISBN 13 : 0081024312
Total Pages : 572 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder

Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face