Characterization Of Beta Silicon Carbide And Nickel Gold Contact To Beta Silicon Carbide Using Auger Electron Spectroscopy And Contact Resistance Measurement

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Masters Theses in the Pure and Applied Sciences

Author : Wade H. Shafer
Publisher : Springer Science & Business Media
ISBN 13 : 1461305993
Total Pages : 411 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 32 (thesis year 1987) a total of 12,483 theses titles from 22 Canadian and 176 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 32 reports theses submitted in 1987, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.

Auger Electron Spectroscopy

Author : Donald T. Hawkins
Publisher : Springer Science & Business Media
ISBN 13 : 1468413872
Total Pages : 305 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Auger Electron Spectroscopy by : Donald T. Hawkins

Download or read book Auger Electron Spectroscopy written by Donald T. Hawkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 1006 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1977 with total page 1006 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Metals Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 1620 pages
Book Rating : 4.:/5 (319 download)

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Download or read book Metals Abstracts written by and published by . This book was released on 1994 with total page 1620 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ceramic Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 1040 pages
Book Rating : 4.E/5 ( download)

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Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2002 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Metals Abstracts Index

Author :
Publisher :
ISBN 13 :
Total Pages : 706 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Metals Abstracts Index by :

Download or read book Metals Abstracts Index written by and published by . This book was released on 1981 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics and Technology of Silicon Carbide Devices

Author : George Gibbs
Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Properties and Applications of Silicon Carbide

Author : Rosario Gerhardt
Publisher : BoD – Books on Demand
ISBN 13 : 9533072016
Total Pages : 550 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Properties and Applications of Silicon Carbide by : Rosario Gerhardt

Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

SiC Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812703837
Total Pages : 143 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

Process Technology for Silicon Carbide Devices

Author : Carl-Mikael Zetterling
Publisher : IET
ISBN 13 : 9780852969984
Total Pages : 202 pages
Book Rating : 4.9/5 (699 download)

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Book Synopsis Process Technology for Silicon Carbide Devices by : Carl-Mikael Zetterling

Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.

Chemically Derived Graphene

Author : Jintao Zhang
Publisher : Royal Society of Chemistry
ISBN 13 : 1788014391
Total Pages : 408 pages
Book Rating : 4.7/5 (88 download)

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Book Synopsis Chemically Derived Graphene by : Jintao Zhang

Download or read book Chemically Derived Graphene written by Jintao Zhang and published by Royal Society of Chemistry. This book was released on 2018-05-10 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing interest in graphene, due to its unique properties and potential applications, is sparking intense research into chemically derived graphene. This book provides a comprehensive overview of the recent and state-of-the-art research on chemically derived graphene materials for different applications. Starting with a brief introduction on chemically derived graphene, subsequent chapters look at various fascinating applications such as electrode materials for fuel cells, Li/Na-ion batteries, metal–air batteries and Li-S batteries, photocatalysts for degradation of pollutants and solar-to-fuels conversion, biosensing platforms, and anti-corrosion coatings. The emphasis throughout this book is on experimental studies and the unique aspects of chemically derived graphene in these fields, including novel functionalization methods, particular physicochemical properties and consequently enhanced performance. With contributions from key researchers, the book provides a detailed resource on the latest progress and the future directions of chemically derived graphene for students and researchers across materials science, chemistry, nanoengineering and related fields.

Silicon Device Processing

Author : Charles P. Marsden
Publisher :
ISBN 13 :
Total Pages : 472 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Silicon Device Processing by : Charles P. Marsden

Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Physics of Semiconductor Devices

Author : Simon M. Sze
Publisher : John Wiley & Sons
ISBN 13 : 1119429110
Total Pages : 944 pages
Book Rating : 4.1/5 (194 download)

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Book Synopsis Physics of Semiconductor Devices by : Simon M. Sze

Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-03 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Methods for Geochemical Analysis

Author : Philip A. Baedecker
Publisher :
ISBN 13 :
Total Pages : 192 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Methods for Geochemical Analysis by : Philip A. Baedecker

Download or read book Methods for Geochemical Analysis written by Philip A. Baedecker and published by . This book was released on 1987 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analytical methods used in the Geologic Division laboratories of the U.S. Geological Survey for the inorganic chemical analysis of rock and mineral samples.

The Engineering Index Annual

Author :
Publisher :
ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis The Engineering Index Annual by :

Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.