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Author : Jerzy Henryk Mazur
Publisher :
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.:/5 (29 download)
Download or read book Atomic Structure of the Silicon/silicon Dioxide Interface written by Jerzy Henryk Mazur and published by . This book was released on 1986 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B.E. Deal
Publisher : Springer Science & Business Media
ISBN 13 : 1489915885
Total Pages : 505 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wendell Douglas Eades
Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.F/5 ( download)
Download or read book Characterization of Silicon-silicon Dioxide Interface Traps Using Deep Level Transient Spectroscopy written by Wendell Douglas Eades and published by . This book was released on 1985 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Olof Engström
Publisher : Cambridge University Press
ISBN 13 : 1107005930
Total Pages : 369 pages
Book Rating : 4.1/5 (7 download)
Download or read book The MOS System written by Olof Engström and published by Cambridge University Press. This book was released on 2014-09-25 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Author : B.E. Deal
Publisher : Springer Science & Business Media
ISBN 13 : 1489907742
Total Pages : 543 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author : M Jamal Deen
Publisher : World Scientific
ISBN 13 : 9814488925
Total Pages : 422 pages
Book Rating : 4.8/5 (144 download)
Download or read book Cmos Rf Modeling, Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author : R. Ekwal Sah
Publisher : The Electrochemical Society
ISBN 13 : 1566777100
Total Pages : 871 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 written by R. Ekwal Sah and published by The Electrochemical Society. This book was released on 2009 with total page 871 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Author : William A Barletta
Publisher : World Scientific
ISBN 13 : 9814552224
Total Pages : 406 pages
Book Rating : 4.8/5 (145 download)
Download or read book Supercolliders And Superdetectors: Proceedings Of The 19th And 25th Workshops Of The Infn Eloisatron Project written by William A Barletta and published by World Scientific. This book was released on 1994-01-27 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume describes the critical issues involved in scaling the technology of proton synchrotrons to operate at energies much larger than those of existing accelerators. Luminosity limitions and interdependence of machine characteristics are analyzed. The second section presents analyses of the detector technologies needed to utilize a hadron super collider at the highest energies and luminosities.
Author :
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sami Franssila
Publisher : John Wiley & Sons
ISBN 13 : 0470020563
Total Pages : 424 pages
Book Rating : 4.4/5 (7 download)
Download or read book Introduction to Microfabrication written by Sami Franssila and published by John Wiley & Sons. This book was released on 2005-01-28 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.
Author : R. W. Grimes
Publisher : World Scientific
ISBN 13 : 9789810207502
Total Pages : 486 pages
Book Rating : 4.2/5 (75 download)
Download or read book Quantum Mechanical Cluster Calculations in Solid State Studies written by R. W. Grimes and published by World Scientific. This book was released on 1992 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume takes an indepth look at the current research done in this important area of solid state science. Although the emphasis is on modelling the properties of definite materials, perfect crystal lattices are also considered in some detail. It is noteworthy that the review articles are written by some of the best known experts in the field.
Author :
Publisher : Academic Press
ISBN 13 : 0080880355
Total Pages : 591 pages
Book Rating : 4.0/5 (88 download)
Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 2009-06-12 with total page 591 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of the electron microscope more than 70 years ago made it possible to visualize a new world, far smaller than anything that could be seen with the traditional microscope. The biologist could study viruses and the components of cells, the materials scientist could study the structure of metals and alloys and many other substances, and especially their defects. But even the electron microscope had limits, and truly atomic structure was still too small to be observed directly. The so-called "limit of resolution" of the microscope was well understood, but attempts to use the necessary correctors were unsuccessful until the late 1990s. Such correctors now equip many microscopes in Europe, the USA and Japan and the results are extremely impressive. Moreover, microscopists feel that they are only at the beginning of a new era of subatomic microscopic imaging. In the present volume, we have brought together the principal contributors, instrument designers and microscopists to discuss this topic in depth. First book on the subject of correctors Well known contributors from academia and microscope manufacturers Provides an ideal starting point for preparing funding proposals
Author :
Publisher : Elsevier
ISBN 13 : 0080534767
Total Pages : 967 pages
Book Rating : 4.0/5 (85 download)
Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 3540264620
Total Pages : 723 pages
Book Rating : 4.5/5 (42 download)
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
Author : Vikram J. Kapoor
Publisher : The Electrochemical Society
ISBN 13 : 9781566770484
Total Pages : 644 pages
Book Rating : 4.7/5 (74 download)
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. Jamal Deen
Publisher : The Electrochemical Society
ISBN 13 : 9781566771375
Total Pages : 610 pages
Book Rating : 4.7/5 (713 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and published by The Electrochemical Society. This book was released on 1997 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt:
