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Atomic And Electronic Structure Of Interfaces In Materials Systems For Future Semiconductor Devices
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Book Synopsis Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices by :
Download or read book Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of the intrinsic limits of the Si/SiO2 based industry, there is a great trend towards the monolithic integration of new materials into already well developed silicon technology. Having lasted for several decades now, downscaling reaches the limit, in which a critical device dimension approaches the size of one atom. At this level of the miniaturization, it is not the bulk material, but the interface between the two materials that what controls the properties of the resulting optoelectronic device. Thus, the characterization of precise atomic arrangements at different interfaces and the influence of these arrangements on the optoelectronic properties of interfaces is required. Therefore, in this study, a combination of scanning transmission electron microscopy (STEM) techniques and density functional theory calculations was used as a research tool for the characterization of interfaces. The STEM instruments used for the study were equipped with prototypes of spherical aberration correctors, enabling to achieve the highest resolution currently available both in space and energy. The combination of experimental and theoretical methods was applied to study interfaces between Si/GaAs, Si/Ge, Ge/SiO2, Si/HfO2 and Si/Al2O3. As the result of the present research, a new dislocation configuration at the Si/GaAs interface was reported for the first time. The influence of this dislocation structure on the electrical properties of the Si/GaAs interface was analyzed. Also, the transition from Si to GaAs and from Si to Ge at corresponding interfaces was described with atomic precision. For the first time, the interface between Ge and SiO2 was shown to have 'ideal' characteristics (chemical abruptness and sharpness). This indicates the potential, both for a more successful use of Ge in high-speed devices and for advances in interface engineering to enhance performance in electronic devices. The features of Si/HfO2 and Si/Al2O &
Book Synopsis Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices by : Sergei Lopatin
Download or read book Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices written by Sergei Lopatin and published by . This book was released on 2003 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: STEM, defects, characterization, simulation, Al2O3, Ge, HfO2, GaAs, Si, high k dielectric, dislocation, Z-contrast, EELS.
Book Synopsis Semiconductor Surfaces and Interfaces by : Friedhelm Bechstedt
Download or read book Semiconductor Surfaces and Interfaces written by Friedhelm Bechstedt and published by . This book was released on 1988 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Interfaces, Microstructures and Devices by : Zhe Chuan Feng
Download or read book Semiconductor Interfaces, Microstructures and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 1993-01-01 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Book Synopsis Atomic and Electronic Structure of Surfaces by : Michel Lannoo
Download or read book Atomic and Electronic Structure of Surfaces written by Michel Lannoo and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surfaces and interfaces play an increasingly important role in today's solid state devices. In this book the reader is introduced, in a didactic manner, to the essential theoretical aspects of the atomic and electronic structure of surfaces and interfaces. The book does not pretend to give a complete overview of contemporary problems and methods. Instead, the authors strive to provide simple but qualitatively useful arguments that apply to a wide variety of cases. The emphasis of the book is on semiconductor surfaces and interfaces but it also includes a thorough treatment of transition metals, a general discussion of phonon dispersion curves, and examples of large computational calculations. The exercises accompanying every chapter will be of great benefit to the student.
Book Synopsis Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces by : Raphael Schlesinger
Download or read book Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces written by Raphael Schlesinger and published by Springer. This book was released on 2016-11-21 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
Book Synopsis Electronic Structure of Disordered Alloys, Surfaces and Interfaces by : Ilja Turek
Download or read book Electronic Structure of Disordered Alloys, Surfaces and Interfaces written by Ilja Turek and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: At present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use because they require an excessive number of atoms per elementary cell, and are not able to account fully for e.g. substitu tional disorder and the true semiinfinite geometry of surfaces. Such problems can be solved more appropriately by Green function techniques and multiple scattering formalism.
Book Synopsis Electronic Structure of Semiconductor Heterojunctions by : Giorgio Margaritondo
Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer. This book was released on 1988-11-30 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa,ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles.
Book Synopsis Semiconductor Interfaces: Formation and Properties by : Guy LeLay
Download or read book Semiconductor Interfaces: Formation and Properties written by Guy LeLay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Book Synopsis The Molecule-Metal Interface by : Norbert Koch
Download or read book The Molecule-Metal Interface written by Norbert Koch and published by John Wiley & Sons. This book was released on 2013-02-08 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reviewing recent progress in the fundamental understanding of the molecule-metal interface, this useful addition to the literature focuses on experimental studies and introduces the latest analytical techniques as applied to this interface. The first part covers basic theory and initial principle studies, while the second part introduces readers to photoemission, STM, and synchrotron techniques to examine the atomic structure of the interfaces. The third part presents photoelectron spectroscopy, high-resolution UV photoelectron spectroscopy and electron spin resonance to study the electronic structure of the molecule-metal interface. In the closing chapter the editors discuss future perspectives. Written as a senior graduate or senior undergraduate textbook for students in physics, chemistry, materials science or engineering, the book's interdisciplinary approach makes it equally relevant for researchers working in the field of organic and molecular electronics.
Book Synopsis Electronic Structure of Semiconductor Interfaces by : F. Herman
Download or read book Electronic Structure of Semiconductor Interfaces written by F. Herman and published by . This book was released on 1984 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report concerns theoretical studies of the electronic structure of various types of interfaces, including (a) interfaces between different semiconductors, such as Ge and GaAs; (b) interfaces between semiconductors and insulators, such as Si and Si02 (c) interfaces between metals and semiconductors, such as Pd2Si and Si; (d) interfaces between crystalline and amorphous semiconductors; and (e) interfaces between ferromagnetic and antiferromagnetic metals, such as Permalloy/MnFe and Co/Cr. The overall goal was to elucidate the inter-relationship between the atomic-scale structure of interfaces and their electronic, optical, and magnetic characteristics. For some of these systems, the effects of structural an chemical imperfectious on interfacial properties were taken into account explicitly. Theoretical results were related to relevant experimental information where possible. This Final general approach, the principal conclusions, and where the subject stands today. Additional information may be found in the six representative research papers and reviews that are reproduced in the Appendices.
Book Synopsis Interfaces in Electronic Materials by : L. Cook
Download or read book Interfaces in Electronic Materials written by L. Cook and published by The Electrochemical Society. This book was released on 2006 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Surfaces and Interfaces of Materials, Five-Volume Set by : Hari Singh Nalwa
Download or read book Handbook of Surfaces and Interfaces of Materials, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Book Synopsis Semiconductor Surfaces and Interfaces by : Winfried Mönch
Download or read book Semiconductor Surfaces and Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.
Book Synopsis Nanoelectronics and Information Technology by : Rainer Waser
Download or read book Nanoelectronics and Information Technology written by Rainer Waser and published by John Wiley & Sons. This book was released on 2012-05-29 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.
Book Synopsis Interface Structures of III-V Semiconductor Heterostructures by :
Download or read book Interface Structures of III-V Semiconductor Heterostructures written by and published by . This book was released on 2003 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report first-principles calculations of the electronic and geometric structure of the (110) cross-sectional surfaces on InAs/GaSb superlattices and compare the results to scanning tunneling microscopy images of filled electronic states. We also study the atomic scale structure of (001) interface surfaces and the adsorption of deposited atoms on these surfaces to simulate the process occurring during the heterostructure growth. In both the predicted and measured images the InAs (110) surfaces appear lower than GaSb, a height difference we show is caused primarily by differences in the electronic structure of the two materials. In contrast, local variations in the apparent height of (110) surface atoms at InSb- or GaAs-like interfaces arise primarily from geometric distortions associated with local differences in bond length. We further observed that both Ga- and Sb-terminating (001) surfaces showed dimerization of surface atoms. Ga-terminating (001) surfaces exhibited substantial buckling of surface atoms while Sb-terminating (001) surfaces did not show appreciable buckling. The adsorption of arsenic atoms occurred preferably at the bridge sites between the dimerized Sb atoms on Sb-terminating (001) surfaces. Indium atoms, on the other hand, were observed to have somewhat equal probabilities to be adsorbed at a few different sites on Ga-terminating (001) surfaces. Our calculated energies for atomic intermixing indicate that anion exchanges are exothermic for As atoms on Ga-terminating (001) interfaces but endothermic for In atoms on Sb-terminating (001) interfaces. This difference may explain why GaAs interfaces are typically more disordered than InSb interfaces in these heterostructures.
