Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections

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Publisher : Springer Science & Business Media
ISBN 13 : 0857293109
Total Pages : 154 pages
Book Rating : 4.8/5 (572 download)

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Book Synopsis Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections by : Cher Ming Tan

Download or read book Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2011-03-28 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.

Electromigration in ULSI Interconnections

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Author :
Publisher : World Scientific
ISBN 13 : 9814273325
Total Pages : 312 pages
Book Rating : 4.8/5 (142 download)

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Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan

Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Graphene and VLSI Interconnects

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Author :
Publisher : CRC Press
ISBN 13 : 1000470687
Total Pages : 121 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Graphene and VLSI Interconnects by : Cher-Ming Tan

Download or read book Graphene and VLSI Interconnects written by Cher-Ming Tan and published by CRC Press. This book was released on 2021-11-24 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.

Electromigration Modeling at Circuit Layout Level

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Publisher : Springer Science & Business Media
ISBN 13 : 9814451215
Total Pages : 111 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Electromigration Modeling at Circuit Layout Level by : Cher Ming Tan

Download or read book Electromigration Modeling at Circuit Layout Level written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2013-03-16 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

Electromigration in ULSI Interconnections

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Author :
Publisher : World Scientific
ISBN 13 : 9814273333
Total Pages : 312 pages
Book Rating : 4.8/5 (142 download)

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Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan

Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.

Electromigration In Ulsi Interconnections

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Author :
Publisher : World Scientific
ISBN 13 : 9814467936
Total Pages : 312 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Electromigration In Ulsi Interconnections by : Cher Ming Tan

Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Semiconductor Process Reliability in Practice

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Author :
Publisher : McGraw Hill Professional
ISBN 13 : 007175427X
Total Pages : 624 pages
Book Rating : 4.0/5 (717 download)

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Book Synopsis Semiconductor Process Reliability in Practice by : Zhenghao Gan

Download or read book Semiconductor Process Reliability in Practice written by Zhenghao Gan and published by McGraw Hill Professional. This book was released on 2012-10-10 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

Finite Element Analysis

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Publisher : BoD – Books on Demand
ISBN 13 : 9535107690
Total Pages : 414 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Finite Element Analysis by : Farzad Ebrahimi

Download or read book Finite Element Analysis written by Farzad Ebrahimi and published by BoD – Books on Demand. This book was released on 2012-10-10 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past few decades, the Finite Element Method (FEM) has been developed into a key indispensable technology in the modeling and simulation of various engineering systems. The present book reports on the state of the art research and development findings on this very broad matter through original and innovative research studies exhibiting various investigation directions of FEM in electrical, civil, materials and biomedical engineering. This book is a result of contributions of experts from international scientific community working in different aspects of FEM. The text is addressed not only to researchers, but also to professional engineers, students and other experts in a variety of disciplines, both academic and industrial seeking to gain a better understanding of what has been done in the field recently, and what kind of open problems are in this area.

Reliability Studies of Finite Element Methods in North America

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Publisher :
ISBN 13 :
Total Pages : 19 pages
Book Rating : 4.:/5 (633 download)

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Book Synopsis Reliability Studies of Finite Element Methods in North America by : NATO. Advisory Group for Aerospace Research & Development

Download or read book Reliability Studies of Finite Element Methods in North America written by NATO. Advisory Group for Aerospace Research & Development and published by . This book was released on 1987 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Electromigration-Aware Integrated Circuit Design

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Author :
Publisher : Springer
ISBN 13 : 3319735586
Total Pages : 171 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Fundamentals of Electromigration-Aware Integrated Circuit Design by : Jens Lienig

Download or read book Fundamentals of Electromigration-Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Advanced Interconnects for ULSI Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1119966868
Total Pages : 616 pages
Book Rating : 4.1/5 (199 download)

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Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov

Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12

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Publisher : Mrs Conference Proceedings
ISBN 13 :
Total Pages : 640 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12 by : Robert Havemann

Download or read book Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12 written by Robert Havemann and published by Mrs Conference Proceedings. This book was released on 1997 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Chemistry in Microelectronics

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Publisher : John Wiley & Sons
ISBN 13 : 1118578120
Total Pages : 261 pages
Book Rating : 4.1/5 (185 download)

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Book Synopsis Chemistry in Microelectronics by : Yannick Le Tiec

Download or read book Chemistry in Microelectronics written by Yannick Le Tiec and published by John Wiley & Sons. This book was released on 2013-02-28 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.

Comprehensive Structural Integrity

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Publisher : Elsevier
ISBN 13 : 0080490735
Total Pages : 4647 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Comprehensive Structural Integrity by : Ian Milne

Download or read book Comprehensive Structural Integrity written by Ian Milne and published by Elsevier. This book was released on 2003-07-25 with total page 4647 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this major reference work is to provide a first point of entry to the literature for the researchers in any field relating to structural integrity in the form of a definitive research/reference tool which links the various sub-disciplines that comprise the whole of structural integrity. Special emphasis will be given to the interaction between mechanics and materials and structural integrity applications. Because of the interdisciplinary and applied nature of the work, it will be of interest to mechanical engineers and materials scientists from both academic and industrial backgrounds including bioengineering, interface engineering and nanotechnology. The scope of this work encompasses, but is not restricted to: fracture mechanics, fatigue, creep, materials, dynamics, environmental degradation, numerical methods, failure mechanisms and damage mechanics, interfacial fracture and nano-technology, structural analysis, surface behaviour and heart valves. The structures under consideration include: pressure vessels and piping, off-shore structures, gas installations and pipelines, chemical plants, aircraft, railways, bridges, plates and shells, electronic circuits, interfaces, nanotechnology, artificial organs, biomaterial prostheses, cast structures, mining... and more. Case studies will form an integral part of the work.

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 1434 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Constrained Deformation of Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 144196312X
Total Pages : 290 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Constrained Deformation of Materials by : Y.-L. Shen

Download or read book Constrained Deformation of Materials written by Y.-L. Shen and published by Springer Science & Business Media. This book was released on 2010-08-09 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Constrained Deformation of Materials: Devices, Heterogeneous Structures and Thermo-Mechanical Modeling" is an in-depth look at the mechanical analyses and modeling of advanced small-scale structures and heterogeneous material systems. Mechanical deformations in thin films and miniaturized materials, commonly found in microelectronic devices and packages, MEMS, nanostructures and composite and multi-phase materials, are heavily influenced by the external or internal physical confinement. A continuum mechanics-based approach is used, together with discussions on micro-mechanisms, to treat the subject in a systematic manner under the unified theme. Readers will find valuable information on the proper application of thermo-mechanics in numerical modeling as well as in the interpretation and prediction of physical material behavior, along with many case studies. Additionally, particular attention is paid to practical engineering relevance. Thus real-life reliability issues are discussed in detail to serve the needs of researchers and engineers alike.

Reliability Studies of Finite Element Methods in North America

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Publisher :
ISBN 13 :
Total Pages : 39 pages
Book Rating : 4.:/5 (131 download)

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Book Synopsis Reliability Studies of Finite Element Methods in North America by : NATO. ADVISORY GROUP FOR AEROSPACE RESEARCH AND DEVELOPMENT.

Download or read book Reliability Studies of Finite Element Methods in North America written by NATO. ADVISORY GROUP FOR AEROSPACE RESEARCH AND DEVELOPMENT. and published by . This book was released on with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: