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Author : Lam Kang
Publisher :
ISBN 13 :
Total Pages : 482 pages
Book Rating : 4.:/5 (231 download)
Download or read book Applicability of the SPICE bipolar transistor DC model to heterostructure bipolar transistors written by Lam Kang and published by . This book was released on 1990 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author : Michael Schrter
Publisher : World Scientific
ISBN 13 : 981427321X
Total Pages : 753 pages
Book Rating : 4.8/5 (142 download)
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author : Félix Stein
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (921 download)
Download or read book SPICE Modeling of TeraHertz Heterojunction Bipolar Transistors written by Félix Stein and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology.
Author : Michael James Werner
Publisher :
ISBN 13 :
Total Pages : 514 pages
Book Rating : 4.:/5 (7 download)
Download or read book Heterostructure Bipolar Transistors by Molecular Beam Epitaxy written by Michael James Werner and published by . This book was released on 1988 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 364255900X
Total Pages : 671 pages
Book Rating : 4.6/5 (425 download)
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : Jianjun Gao
Publisher : John Wiley & Sons
ISBN 13 : 1118921550
Total Pages : 394 pages
Book Rating : 4.1/5 (189 download)
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Author : M F Chang
Publisher : World Scientific
ISBN 13 : 9814501069
Total Pages : 437 pages
Book Rating : 4.8/5 (145 download)
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author : Peter Ashburn
Publisher :
ISBN 13 :
Total Pages : 222 pages
Book Rating : 4.:/5 (51 download)
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author : Roxana Arvandi
Publisher :
ISBN 13 :
Total Pages : 228 pages
Book Rating : 4.:/5 (399 download)
Download or read book DC and AC Modeling of Heterostructure Bipolar Transistors (HBT's) written by Roxana Arvandi and published by . This book was released on 1998 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ian E. Getreu
Publisher : Elsevier Science & Technology
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.3/5 (91 download)
Download or read book Modeling the Bipolar Transistor written by Ian E. Getreu and published by Elsevier Science & Technology. This book was released on 1978 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A new SPICE-type heterojunction bipolar transistor large-signal model written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new SPICE-type, HBT large-signal model is described with special emphasis on the associated parameter extraction techniques. The model can be used to simulate HBT's under DC, microwave small-signal and large-signal conditions. Also, allowance is made for self-heating effects, which are quite pronounced in HBT's. Excellent agreement between measured and simulated results demonstrate the utility of the proposed model in large-signal design.
Author :
Publisher :
ISBN 13 :
Total Pages : 29 pages
Book Rating : 4.:/5 (227 download)
Download or read book Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors written by and published by . This book was released on 1993 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.
Author : William G. Gazeley
Publisher :
ISBN 13 :
Total Pages : 190 pages
Book Rating : 4.:/5 (257 download)
Download or read book A Study of the Temperature Dependence of the DC Current-voltage Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors with Application to Bandgap Voltage Reference Sources written by William G. Gazeley and published by . This book was released on 1989 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The bandgap voltage reference technique, as implemented in Silicon technology, has evolved to a state of advanced development and become the method of choice for temperature independent voltage biasing in integrated circuits. The heterojunction bipolar transistor (HBT), fabricated from epitaxial A1GaAs /GaAs, is developing to a point where basic circuit implementations are possible. This project extends the bandgap reference concept, as developed for Silicon bipolar junction transistor, to HBTs. The I [subscript C] - V [subscript BE] characteristics of sample HBTs are measured over a temperature range of 220K to 360K, and model parameters are determined from curve-fitting. Due to device nonidealities, such as high series resistance and low current gain, poor performance is expected from bandgap voltage reference sources made with HBTs.
Author : Juin J. Liou
Publisher : Artech House Publishers
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.3/5 (91 download)
Download or read book Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors written by Juin J. Liou and published by Artech House Publishers. This book was released on 1996 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.
Author : Gerold W. Neudeck
Publisher : Pearson
ISBN 13 :
Total Pages : 134 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Bipolar Junction Transistor written by Gerold W. Neudeck and published by Pearson. This book was released on 1989 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of a series of correlated but essentially self-contained volumes. Each is devoted to a specific device. Emphasis is on developing a fundamental understanding of the internal workings of the most basic solid state device structures. Annotation copyrighted by Book News, Inc., Portland, OR
Author : Andreas Pawlak
Publisher : Tudpress Verlag Der Wissenschaften Gmbh
ISBN 13 : 9783959080286
Total Pages : 244 pages
Book Rating : 4.0/5 (82 download)
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
