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Analysis Of Small Geometry Vlsi Bipolar Transistors Including Polysilicon Emitter Devices
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Book Synopsis Analysis of Small Geometry VLSI Bipolar Transistors Including Polysilicon Emitter Devices by : Abdelshafy Abdelraouf Eltoukhy
Download or read book Analysis of Small Geometry VLSI Bipolar Transistors Including Polysilicon Emitter Devices written by Abdelshafy Abdelraouf Eltoukhy and published by . This book was released on 1982 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis Numerical Model and Analysis of Transistors with Polysilicon Emitters by : Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory
Download or read book Numerical Model and Analysis of Transistors with Polysilicon Emitters written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1985 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Book Synopsis Compact Hierarchical Bipolar Transistor Modeling with Hicum by : Michael Schrter
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Book Synopsis Fundamentals of Modern VLSI Devices by : Yuan Taur
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2021-12-02 with total page 627 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Book Synopsis Hot-carrier Reliability of Bipolar Transistors and Circuits by : Burnett James
Download or read book Hot-carrier Reliability of Bipolar Transistors and Circuits written by Burnett James and published by . This book was released on 1990 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Realization of Bipolar Transistors by : Peter Ashburn
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Book Synopsis A Study of Bipolar Transistors with Polysilicon Emitters by : B. Soerowirdjo
Download or read book A Study of Bipolar Transistors with Polysilicon Emitters written by B. Soerowirdjo and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polysilicon Emitter Bipolar Transistors by : K. Kapoor Ashon
Download or read book Polysilicon Emitter Bipolar Transistors written by K. Kapoor Ashon and published by . This book was released on 1983 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1983 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics, Technology, and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors by : Gary L. Patton
Download or read book Physics, Technology, and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors written by Gary L. Patton and published by . This book was released on 1986 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Perimeter Effects in Small Geometry Bipolar Transistors by : Wai Lee
Download or read book Perimeter Effects in Small Geometry Bipolar Transistors written by Wai Lee and published by . This book was released on 1992 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling by : Tobias Nardmann
Download or read book Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling written by Tobias Nardmann and published by BoD – Books on Demand. This book was released on 2017-08-28 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.
Book Synopsis Design and Characterization of Polysilicon Emitter Bipolar Transistors by : Kathleen Susan Krisch
Download or read book Design and Characterization of Polysilicon Emitter Bipolar Transistors written by Kathleen Susan Krisch and published by . This book was released on 1988 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1996 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
