Advanced Physical Models for Silicon Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 370916494X
Total Pages : 370 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Advanced Physical Models for Silicon Device Simulation by : Andreas Schenk

Download or read book Advanced Physical Models for Silicon Device Simulation written by Andreas Schenk and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal

Silicon and Beyond

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Author :
Publisher : World Scientific
ISBN 13 : 9789810242800
Total Pages : 196 pages
Book Rating : 4.2/5 (428 download)

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Book Synopsis Silicon and Beyond by : Michael Shur

Download or read book Silicon and Beyond written by Michael Shur and published by World Scientific. This book was released on 2000 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field. The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for,handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.

Silicon and Beyond

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Publisher :
ISBN 13 : 9814493260
Total Pages : pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Silicon and Beyond by :

Download or read book Silicon and Beyond written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Device Modeling and Simulation

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Author :
Publisher : World Scientific
ISBN 13 : 9814485012
Total Pages : 216 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Advanced Device Modeling and Simulation by : Tibor Grasser

Download or read book Advanced Device Modeling and Simulation written by Tibor Grasser and published by World Scientific. This book was released on 2003-10-17 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods. Contents:Modeling Electron Transport in MOSFET Devices: Evolution and State of the Art (A Abramo)Particle Models for Device Simulation (H Kosina & M Nedjalkov)Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach (C Ringhofer et al.)Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrödinger and Boltzmann System of Equations (N Goldsman & C-K Huang)Hydrodynamic Modeling of RF Noise for Silicon-Based Devices (C Jungemann et al.)Carbon Nanotubes as a Perfectly Conducting Cylinder (T Ando)Hot Carrier Effects Within Macroscopic Transport Models (T Grasser et al.) Readership: Upper level undergraduates, graduate students, academics/lecturers, researchers and industrialists in microelectronics and semiconductor science. Keywords:Device Simulation;Monte Carlo Method;Wigner-Boltzmann Equation;Spherical Harmonics;Carbon Nanotubes;Quantum Effects

Semiconductor Device Modelling

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Publisher : Springer Science & Business Media
ISBN 13 : 1447110331
Total Pages : 267 pages
Book Rating : 4.4/5 (471 download)

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Book Synopsis Semiconductor Device Modelling by : Christopher M. Snowden

Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.

Semiconductor Device Physics and Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 9780306457241
Total Pages : 352 pages
Book Rating : 4.4/5 (572 download)

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Book Synopsis Semiconductor Device Physics and Simulation by : J.S. Yuan

Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 1998-05-31 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Introduction to Device Modeling and Circuit Simulation

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Author :
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Introduction to Device Modeling and Circuit Simulation by : Tor A. Fjeldly

Download or read book Introduction to Device Modeling and Circuit Simulation written by Tor A. Fjeldly and published by Wiley-Interscience. This book was released on 1998 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.

Analysis and Simulation of Heterostructure Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Simulation of Semiconductor Devices and Processes

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Publisher : Springer Science & Business Media
ISBN 13 : 3709166195
Total Pages : 515 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Devices and Processes by : Heiner Ryssel

Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Simulation of Semiconductor Processes and Devices 2001

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Publisher : Springer Science & Business Media
ISBN 13 : 9783211837085
Total Pages : 478 pages
Book Rating : 4.8/5 (37 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 2001 by : Dimitris Tsoukalas

Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2001-08-21 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Simulation of Semiconductor Devices and Processes

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Publisher : Springer Science & Business Media
ISBN 13 : 3709166578
Total Pages : 525 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr

Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Simulation of Semiconductor Processes and Devices 1998

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Publisher : Springer Science & Business Media
ISBN 13 : 3709168279
Total Pages : 423 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 1998 by : Kristin De Meyer

Download or read book Simulation of Semiconductor Processes and Devices 1998 written by Kristin De Meyer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

Hierarchical Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709160863
Total Pages : 278 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann

Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Simulation of Semiconductor Processes and Devices 2004

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Publisher : Springer Science & Business Media
ISBN 13 : 9783211224687
Total Pages : 420 pages
Book Rating : 4.2/5 (246 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 2004 by : Gerhard Wachutka

Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2004-08-23 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Transistor Level Modeling for Analog/RF IC Design

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Publisher : Springer Science & Business Media
ISBN 13 : 1402045565
Total Pages : 298 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski

Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

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Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 554 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Springer Handbook of Semiconductor Devices

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Author :
Publisher : Springer Nature
ISBN 13 : 3030798275
Total Pages : 1680 pages
Book Rating : 4.0/5 (37 download)

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Book Synopsis Springer Handbook of Semiconductor Devices by : Massimo Rudan

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.