Active Substrate Noise Suppression Circuit in Advanced 0.18 Micrometer SiGe BiCMOS Technology for High Performance RF/mixed-signal SOC Applications

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ISBN 13 :
Total Pages : 234 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Active Substrate Noise Suppression Circuit in Advanced 0.18 Micrometer SiGe BiCMOS Technology for High Performance RF/mixed-signal SOC Applications by : Wael Hamdi Hemdan

Download or read book Active Substrate Noise Suppression Circuit in Advanced 0.18 Micrometer SiGe BiCMOS Technology for High Performance RF/mixed-signal SOC Applications written by Wael Hamdi Hemdan and published by . This book was released on 2006 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Substrate Noise Coupling in Mixed-Signal ASICs

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Publisher : Springer Science & Business Media
ISBN 13 : 0306481707
Total Pages : 311 pages
Book Rating : 4.3/5 (64 download)

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Book Synopsis Substrate Noise Coupling in Mixed-Signal ASICs by : Stéphane Donnay

Download or read book Substrate Noise Coupling in Mixed-Signal ASICs written by Stéphane Donnay and published by Springer Science & Business Media. This book was released on 2006-05-31 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first in a series of three dedicated to advanced topics in Mixed-Signal IC design methodologies. It is one of the results achieved by the Mixed-Signal Design Cluster, an initiative launched in 1998 as part of the TARDIS project, funded by the European Commission within the ESPRIT-IV Framework. This initiative aims to promote the development of new design and test methodologies for Mixed-Signal ICs, and to accelerate their adoption by industrial users. As Microelectronics evolves, Mixed-Signal techniques are gaining a significant importance due to the wide spread of applications where an analog front-end is needed to drive a complex digital-processing subsystem. In this sense, Analog and Mixed-Signal circuits are recognized as a bottleneck for the market acceptance of Systems-On-Chip, because of the inherent difficulties involved in the design and test of these circuits. Specially, problems arising from the use of a common substrate for analog and digital components are a main limiting factor. The Mixed-Signal Cluster has been formed by a group of 11 Research and Development projects, plus a specific action to promote the dissemination of design methodologies, techniques, and supporting tools developed within the Cluster projects. The whole action, ending in July 2002, has been assigned an overall budget of more than 8 million EURO.

Substrate Noise

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Publisher : Springer Science & Business Media
ISBN 13 : 0792373251
Total Pages : 178 pages
Book Rating : 4.7/5 (923 download)

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Book Synopsis Substrate Noise by : Edoardo Charbon

Download or read book Substrate Noise written by Edoardo Charbon and published by Springer Science & Business Media. This book was released on 2001-04-30 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past decade, substrate noise has had a constant and significant impact on the design of analog and mixed-signal integrated circuits. Only recently, with advances in chip miniaturization and innovative circuit design, has substrate noise begun to plague fully digital circuits as well. To combat the effects of substrate noise, heavily over-designed structures are generally adopted, thus seriously limiting the advantages of innovative technologies. Substrate Noise: Analysis and Optimization for IC Design addresses the main problems posed by substrate noise from both an IC and a CAD designer perspective. The effects of substrate noise on performance in digital, analog, and mixed-signal circuits are presented, along with the mechanisms underlying noise generation, injection, and transport. Popular solutions to the substrate noise problem and the trade-offs often debated by designers are extensively discussed. Non-traditional approaches as well as semi-automated techniques to combat substrate noise are also addressed. Substrate Noise: Analysis and Optimization for IC Design will be of interest to researchers and professionals interested in signal integrity, as well as to mixed signal and RF designers.

Modeling and Analysis of High Frequency Noise in BiCMOS Transistors

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (114 download)

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Book Synopsis Modeling and Analysis of High Frequency Noise in BiCMOS Transistors by : Peng Cheng

Download or read book Modeling and Analysis of High Frequency Noise in BiCMOS Transistors written by Peng Cheng and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The importance of high frequency noise performance is increasing in advanced bipolar and complementary metal-oxide semiconductor (BiCMOS) technologies because of the high demands of radio frequency (RF) and mixed-signal integrated circuits used in the 5G communication, automatic-driving sensors and internet of things (IOT) applications. While the characterization and modeling of high frequency noise of BiCMOS transistors have been a topic for many years, some important issues have not been clarified. For example, the noise correlation is not well predicted for bipolar devices, the excess noise factor is not well understood for MOSFET devices and the temperature dependence of high frequency noise in BiCMOS devices is not well studied. Focused on these issues, this research establishes the approach to extract the noise transit time from the high current compact model (HICUM), demonstrates an efficient methodology for high frequency noise prediction for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and validates the prediction methodology over size, bias and temperature. One of the issues of high frequency noise modeling of bipolar transistors is the noise correlation effect. This research explores the physical origin of high frequency noise correlation, studies the noise model of SiGe HBTs and creates an approach to extract the noise transit time from the HICUM compact model. The extracted noise transit time is validated by the tuner-based noise measurement results of sample SiGe HBTs by comparing the four noise parameters between the calculated and measured data over transistor size, bias and temperature. The results show that the noise transit time can be independent of frequency but dependent on bias and temperature. Furthermore, a complete high frequency noise prediction system is established. Based on the extraction methodology of the noise transit time from the HICUM model, this dissertation demonstrates a low-cost and time-friendly methodology to predict the full high frequency noise properties of the bipolar devices directly from the S-parameter measurement, DC measurement and the parameters from the HICUM model without the tuner-based noise measurement. Compared with the conventional tuner-based noise measurement, this methodology can save the measurement time as well as achieve a good accuracy. For MOSFET devices, the importance of excess noise factor is increasing with the transistor size scaling down to sub-100nm for high frequency noise modeling, but it has not been well studied so far. This research analyzes the excess noise factor based on the device physics and characterization results, investigates the noise sources contribution and models the high frequency noise based on Y-parameter methodology.

Substrate Noise Modeling and Suppression in RF/mixed Signal IC Technology

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ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (462 download)

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Book Synopsis Substrate Noise Modeling and Suppression in RF/mixed Signal IC Technology by : Haitao Dai

Download or read book Substrate Noise Modeling and Suppression in RF/mixed Signal IC Technology written by Haitao Dai and published by . This book was released on 2008 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies

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Publisher : Cuvillier Verlag
ISBN 13 : 3736983352
Total Pages : 136 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies by : Muhammad Maruf Hossain

Download or read book Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies written by Muhammad Maruf Hossain and published by Cuvillier Verlag. This book was released on 2016-10-27 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of commercial and defense applications are expected to have sub-terahertz (THz) and mm-wave integrated circuits in the near future. Silicon (Si) technologies partly meet the demands but are limited in their power handling capability. III-V technologies, in particular InP, offer higher output power but fall short of their Si counterparts if it comes to integration density and complexity. Thus, research on hetero-integration of Si with InP has gained increasing interest. This work focuses on MMIC signal sources as important building blocks that are based on FBH’s 0.8 μm InP-DHBT transferred-substrate (TS) process, offering an InP-DHBT as well as an InP-on-BiCMOS version. This process is unique and provides interesting possibilities to realize integrated circuits in the frequency range between 100 GHz and more than 300 GHz. First, fundamental sources at 96 GHz and 197 GHz are presented. They deliver +9 dBm and 0 dBm output power with 25% and 0.5% overall DC-to-RF efficiency, respectively. Furthermore, 162 GHz and 270 GHz push-push sources are demonstrated utilizing an InP-on-BiCMOS process, which achieve -4.5 dBm and -9.5 dBm output power. Subsequently, multiplier-based signal sources are demonstrated including a full G-band (140-220 GHz) frequency doubler, which delivers +8.2 dBm at 180 GHz and more than +5 dBm in the range 160-200 GHz. The doubler circuit exhibits a power efficiency of 16% in this frequency range. Also, the highest frequency is reached by a wideband 328 GHz quadrupler, with -7 dBm output power at 325 GHz and 0.5% DC-to-RF efficiency. The final part is devoted to hetero-integrated circuits and the necessary design considerations. Two 250 GHz and 330 GHz sources are demonstrated that deliver -1.6 dBm and -12 dBm output power, respectively. These are the first hetero-integrated signal sources in this frequency range reported so far.

Low-noise Circuitry for Extreme Environment Detection Systems Implemented in SiGe BiCMOS Technology

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (825 download)

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Book Synopsis Low-noise Circuitry for Extreme Environment Detection Systems Implemented in SiGe BiCMOS Technology by : Eleazar Walter Kenyon

Download or read book Low-noise Circuitry for Extreme Environment Detection Systems Implemented in SiGe BiCMOS Technology written by Eleazar Walter Kenyon and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work evaluates two SiGe BiCMOS technology platforms as candidates for implementing extreme environment capable circuitry, with an emphasis on applications requiring high sensitivity and low noise. In Chapter 1, applications requiring extreme environment sensing circuitry are briefly reviewed and the motivation for undertaking this study is outlined. A case is then presented for the use of SiGe BiCMOS technology to meet this need, documenting the benefits of operating SiGe HBTs at cryogenic temperatures. Chapter 1 concludes with a brief description of device radiation effects in bipolar and CMOS devices, and a basic overview of noise in semiconductor devices and electronic components. Chapter 2 further elaborates on a specific application requiring low-noise circuitry capable of operating at cryogenic temperatures and proposes a number of variants of band-gap reference circuits for use in said system. Detailed simulation and theoretical analysis of the proposed circuits are presented and compared with measurements, validating the techniques used in the proposed designs and emphasizing the need for further understanding of device level low-temperature noise phenomena. Chapter 3 evaluates the feasibility of using a SiGe BiCMOS process, whose response to ionizing radiation was previously uncharacterized, for use in unshielded electronic systems needed for exploration of deep space planets or moons, specifically targeting Europa mission requirements. Measured total ionizing dose (TID) responses for both CMOS and bipolar SiGe devices are presented and compared to similar technologies. The mechanisms responsible for device degradation are outlined, and an explanation of unexpected results is proposed. Finally, Chapter 4 summarizes the work presented and understanding provided by this thesis, concluding by outlining future research needed to build upon this study and fully realize SiGe based extreme environment capable precision electronic systems.

Substrate Noise Analysis and Techniques for Mitigation in Mixed-signal RF Systems

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ISBN 13 :
Total Pages : 158 pages
Book Rating : 4.:/5 (77 download)

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Book Synopsis Substrate Noise Analysis and Techniques for Mitigation in Mixed-signal RF Systems by : Nisha Checka

Download or read book Substrate Noise Analysis and Techniques for Mitigation in Mixed-signal RF Systems written by Nisha Checka and published by . This book was released on 2005 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) Existing techniques have prohibitively long simulation times and are only suitable for final verification. Determination of substrate noise coupling during the design phase would be extremely beneficial to circuit designers who can incorporate the effect of the noise and re-design accordingly before fabrication. This would reduce the turn around time for circuits and prevent costly redesign. SNAT can be used at any stage of the design cycle to accurately predict (less than 12% error when compared to measurements) the substrate noise performance of any digital circuit with a large degree of computational efficiency.

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 2304 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiGe BiCMOS Circuit and System Design and Characterization for Extreme Environment Applications

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (761 download)

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Book Synopsis SiGe BiCMOS Circuit and System Design and Characterization for Extreme Environment Applications by : Troy Daniel England

Download or read book SiGe BiCMOS Circuit and System Design and Characterization for Extreme Environment Applications written by Troy Daniel England and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes the architecture, verification, qualification, and packaging of a 16-channel silicon-germanium (SiGe) Remote Electronics Unit (REU) designed for use in extreme environment applications encountered on NASA's exploration roadmap. The SiGe REU was targeted for operation outside the protective electronic "vaults" in a lunar environment that exhibits cyclic temperature swings from -180o.C to 120o.C, a total ionizing dose (TID) radiation level of 100 krad, and heavy ion exposure (single event effects) over the mission lifetime. The REU leverages SiGe BiCMOS technological advantages and design methodologies, enabling exceptional extreme environment robustness. It utilizes a mixed-signal Remote Sensor Interface (RSI) ASIC and an HDL-based Remote Digital Control (RDC) architecture to read data from up to 16 sensors using three different analog channel types with customizable gain, current stimulus, calibration, and sample rate with 12-bit analog-to-digital conversion. The SiGe REU exhibits excellent channel sensitivity throughout the temperature range, hardness to at least 100 krad TID exposure, and single event latchup immunity, representing the cutting edge in cold-capable electronic systems. The SiGe REU is the first example within a potential paradigm shift in space-based electronics.

SiGe Heterojunction Bipolar Transistors

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Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Proceedings of the ... Custom Integrated Circuits Conference

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ISBN 13 :
Total Pages : 824 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Proceedings of the ... Custom Integrated Circuits Conference by :

Download or read book Proceedings of the ... Custom Integrated Circuits Conference written by and published by . This book was released on 1989 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-Frequency Integrated Circuits

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Publisher : Cambridge University Press
ISBN 13 : 0521873029
Total Pages : 921 pages
Book Rating : 4.5/5 (218 download)

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Book Synopsis High-Frequency Integrated Circuits by : Sorin Voinigescu

Download or read book High-Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.

Semiconductor Detector Systems

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Publisher : OUP Oxford
ISBN 13 : 0191523658
Total Pages : 513 pages
Book Rating : 4.1/5 (915 download)

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Book Synopsis Semiconductor Detector Systems by : Helmuth Spieler

Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Silicon-germanium Heterojunction Bipolar Transistors

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Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Guide to State-of-the-Art Electron Devices

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Publisher : John Wiley & Sons
ISBN 13 : 1118517539
Total Pages : 637 pages
Book Rating : 4.1/5 (185 download)

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Book Synopsis Guide to State-of-the-Art Electron Devices by : Joachim N. Burghartz

Download or read book Guide to State-of-the-Art Electron Devices written by Joachim N. Burghartz and published by John Wiley & Sons. This book was released on 2013-03-19 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.

Foundations for Microstrip Circuit Design

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Publisher : John Wiley & Sons
ISBN 13 : 1118936175
Total Pages : 688 pages
Book Rating : 4.1/5 (189 download)

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Book Synopsis Foundations for Microstrip Circuit Design by : Terry C. Edwards

Download or read book Foundations for Microstrip Circuit Design written by Terry C. Edwards and published by John Wiley & Sons. This book was released on 2016-02-01 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.