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Activation Des Dopants Implantes Dans Le Carbure De Silicium 3c Sic Et 4h Sic
Download Activation Des Dopants Implantes Dans Le Carbure De Silicium 3c Sic Et 4h Sic full books in PDF, epub, and Kindle. Read online Activation Des Dopants Implantes Dans Le Carbure De Silicium 3c Sic Et 4h Sic ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Book Synopsis Ceramic Materials by : Philippe Boch
Download or read book Ceramic Materials written by Philippe Boch and published by John Wiley & Sons. This book was released on 2010-01-05 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is primarily an introduction to the vast family of ceramic materials. The first part is devoted to the basics of ceramics and processes: raw materials, powders synthesis, shaping and sintering. It discusses traditional ceramics as well as “technical” ceramics – both oxide and non-oxide – which have multiple developments. The second part focuses on properties and applications, and discusses both structural and functional ceramics, including bioceramics. The fields of abrasion, cutting and tribology illustrate the importance of mechanical properties. It also deals with the questions/answers of a ceramicist regarding electronuclear technology. As chemistry is an essential discipline for ceramicists, the book shows, in particular, what soft chemistry can contribute as a result of sol-gel methods.
Book Synopsis Advances in Silicon Carbide Processing and Applications by : Stephen E. Saddow
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Author :Garry Efimovich Freger Publisher :Springer Science & Business Media ISBN 13 :9783540211884 Total Pages :332 pages Book Rating :4.2/5 (118 download)
Book Synopsis Spirally Anisotropic Composites by : Garry Efimovich Freger
Download or read book Spirally Anisotropic Composites written by Garry Efimovich Freger and published by Springer Science & Business Media. This book was released on 2004-07-12 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is known that composites have insufficient transversal strength and rigidity, and low longitudinal shear modulus, compression and shear strength. This book describes methods to avoid these disadvantages by hybridization and spiral reinforcement of composites at the micro-level during the production stage. Mathematical models and design methods have been developed for various composites. The authors discuss the technology of spiral reinforcement and fillers, the structures and properties of spirally reinforced composites, binders, the manufacture of such composites, and the application of new materials and constructions. This informative text will be of interest to researchers, teachers and students in academia and also to industrial scientists and engineers involved in the development and application of new materials.
Book Synopsis Unsteady Transonic Flow by : Mårten T. Landahl
Download or read book Unsteady Transonic Flow written by Mårten T. Landahl and published by Courier Dover Publications. This book was released on 2019-04-17 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: This classic monograph on unsteady transonic flow — the flow of air encountered at speeds at or near the speed of sound — is of continuing interest to students and professionals in aerodynamics, fluid dynamics, and other areas of applied mathematics. After a brief Introduction, Swedish physicist Mårten T. Landahl presents a chapter in which the two-dimensional solution is derived, succeeded by a discussion of its relation to the subsonic and supersonic solutions. Three chapters on low aspect ratio configurations follow, covering triangular wings and similar planforms with curved leading edges, rectangular wings, and cropped delta wings, and low aspect ratio wing-body combinations. The treatment concludes with a consideration of the experimental determination of air forces on oscillating wings at transonic speeds.
Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer. This book was released on 1976 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis· seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) *at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac· tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 20 (thesis year 1975) a total of 10,374 theses titles from 28 Canadian and 239 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. The organization of Volume 20 is identical to that of past years. It consists of theses titles arranged by discipline and by university within each discipline.
Book Synopsis Process Technology for Silicon Carbide Devices by : Carl-Mikael Zetterling
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Book Synopsis Fundamentals of Ceramic Powder Processing and Synthesis by : Terry A. Ring
Download or read book Fundamentals of Ceramic Powder Processing and Synthesis written by Terry A. Ring and published by Elsevier. This book was released on 1996-04-30 with total page 985 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ceramic powder synthesis and processing are two of the most important technologies in chemical engineering and the ceramics-related area of materials science. This book covers both the processing and the synthesis ofceramic powders in great depth and is indeed the only up-to-date, comprehensive source on the subject available.The application of modern scientific and engineering methods to the field of ceramic powder synthesis has resulted in much greater control of properties. Fundamentals of Ceramic Powder Processing and Synthesis presents examples of these modern methods as they apply to ceramic powders. The book is organized to describe the natural and synthetic raw materials that comprise contemporary ceramics. It covers the three reactant processes used in synthetic ceramic powder synthesis: solid, liquid, andgas.Ceramic powder processing, as a field of materials processing, is undergoing rapid expansion. The present volume is intended as a complete and useful source on this subject of great current interest. It provides comprehensive coverage from a strong chemistry and chemical engineering perspective and is especially applicable to materials scientists, chemical engineers, and applied chemists.Key Features* The most complete and updated reference source on the subject* Comprehensive coverage from a stron chemical engineering and chemistry perspective* Emphasis on both natural and synthetic raw materials in ceramic powder synthesis* Information on reaction kinetics* Superior, more comprehensive coverage than that in existing texts* Sample problems and exercises* Problems at the end of each chapter which supplement the material
Book Synopsis Glasses and the Vitreous State by : Jerzy Zarzycki
Download or read book Glasses and the Vitreous State written by Jerzy Zarzycki and published by Cambridge University Press. This book was released on 1991-07-25 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date and comprehensive coverage of the properties of glasses as materials and of the vitreous state in general. The broad coverage of the book includes a study of the methods of studying the structure, glass classification, and electrical, optical, thermal and mechanical properties of glasses.
Book Synopsis Structure and Properties of MgO and Al2O3 Ceramics by : W. D. Kingery
Download or read book Structure and Properties of MgO and Al2O3 Ceramics written by W. D. Kingery and published by . This book was released on 1984 with total page 886 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ceramic Science for Materials Technologists by : I. J. McColm
Download or read book Ceramic Science for Materials Technologists written by I. J. McColm and published by . This book was released on 1983 with total page 357 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Silicon Carbide by : A.A. Lebedev
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Book Synopsis Electrical Characterization of Ion-Implanted 4H-Silicon Carbide by : Christian Morath
Download or read book Electrical Characterization of Ion-Implanted 4H-Silicon Carbide written by Christian Morath and published by . This book was released on 1999-03-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Book Synopsis An Introduction to Mineral Sciences by : A. Putnis
Download or read book An Introduction to Mineral Sciences written by A. Putnis and published by Cambridge University Press. This book was released on 1992-10-22 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of mineralogy is moving away from the traditional systematic treatment of mineral groups toward the study of the behaviour of minerals in relation to geological processes. A knowledge of how minerals respond to a changing geological environment is fundamental to our understanding of many dynamic earth processes. By adopting a materials science approach, An Introduction to Mineral Sciences explains the principles underlying the modern study of minerals, discussing the behaviour of crystalline materials with changes in temperature, pressure and chemical environment. The concepts required to understand mineral behaviour are often complex, but are presented here in simple, non-mathematical terms for undergraduate mineralogy students. After introductory chapters describing the principles of diffraction, imaging and the spectroscopic methods used to study minerals, the structure and behaviour of the main groups of rock-forming minerals are covered, and the role of defects in the deformation and transformation of a mineral are explained. The energy changes and the rate of transformation processes are introduced using a descriptive approach rather than attempting a complete and rigorous treatment of the thermodynamics and kinetics. Examples and case histories from a range of mineral groups are set in an earth science context, such that the emphasis of this book is to allow the student to develop an intuitive understanding of the structural principles controlling the behaviour of minerals.
Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Book Synopsis Advancing Silicon Carbide Electronics Technology II by : Konstantinos Zekentes
Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
