A Unique High Temperature High Pressure Crystal Growth System For Silicon Carbide

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A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide

Author : J. R. Littler
Publisher :
ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide by : J. R. Littler

Download or read book A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide written by J. R. Littler and published by . This book was released on 1973 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).

Crystal Growth Technology

Author : Hans J. Scheel
Publisher : John Wiley & Sons
ISBN 13 : 0470491108
Total Pages : 695 pages
Book Rating : 4.4/5 (74 download)

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Book Synopsis Crystal Growth Technology by : Hans J. Scheel

Download or read book Crystal Growth Technology written by Hans J. Scheel and published by John Wiley & Sons. This book was released on 2009-07-31 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

Рост Кристаллоь / Rost Kristallov / Growth of Crystals

Author : A. A. Chernov
Publisher : Springer Science & Business Media
ISBN 13 : 1461571162
Total Pages : 359 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Рост Кристаллоь / Rost Kristallov / Growth of Crystals by : A. A. Chernov

Download or read book Рост Кристаллоь / Rost Kristallov / Growth of Crystals written by A. A. Chernov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volumes 11 and 12 contain the papers read at the Fourth All-Union Conference on Crystal Growth in Tsakhkadzor, September 17-22, 1972; this volume contains papers on crystal growth from melts, from low-temperature solutions, hydrothermal solutions, and hot solutions, and also from the gas state, including processes involving reactions. In addition, there are papers on crystal perfection in relation to conditions of formation and the effects of electric and mag netic fields on crystallization. These papers reflect researches directed to the development and industrial production of perfect crystals required for advanced techniques in solid-state physics and chemistry, as well as for other purposes such as novel materials. There are many different scientific and technical problems in producing large perfect single crystals, and advances in this area made in the USSR and elsewhere are reflected in the papers in both volumes. On the one hand, any particular defective structure in a crystal originates from some mechanism and growth conditions; in particular, inclusions are trapped on account of the physicochemical parameters of the melt, the surface processes, and the sta bility of the growth front under particular crystallization conditions. Further, impurity trap ping is decisively influenced by the surface kinetics, growth-front stability, composition and structure of the boundary layer, any complexes present in the liquid, and (of course) the crys tallochemical relationships between the impurity and the crystal.

High Pressure, High Temperature Crystal Growth System

Author : Robert C. Marshall (author)
Publisher :
ISBN 13 :
Total Pages : 36 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis High Pressure, High Temperature Crystal Growth System by : Robert C. Marshall (author)

Download or read book High Pressure, High Temperature Crystal Growth System written by Robert C. Marshall (author) and published by . This book was released on 1967 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report describes the design, installation, calibration, and test of a unique high pressure, high temperature crystal growth system of the Solid State Sciences Laboratory of Air Force Cambridge Research Laboratories. A number of modifications and innovations that make the system unique are described. Pictures and diagrams of the crystal growth system are sufficiently complete to provide substantial aid in the operation or duplication of this facility. This furnace has been operated above 3000C at internal pressures of twenty atmospheres and at a vacuum in the low 0.00001 Torr range. (Author).

Report on Research at AFCRL.

Author : Air Force Cambridge Research Laboratories (U.S.)
Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Report on Research at AFCRL. by : Air Force Cambridge Research Laboratories (U.S.)

Download or read book Report on Research at AFCRL. written by Air Force Cambridge Research Laboratories (U.S.) and published by . This book was released on 1972 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide

Author : Moumita Mukherjee
Publisher : BoD – Books on Demand
ISBN 13 : 9533079681
Total Pages : 562 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Silicon Carbide by : Moumita Mukherjee

Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

OAR Cumulative Index of Research Results

Author :
Publisher :
ISBN 13 :
Total Pages : 1264 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis OAR Cumulative Index of Research Results by :

Download or read book OAR Cumulative Index of Research Results written by and published by . This book was released on 1967 with total page 1264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials

Author : Peter Capper
Publisher : John Wiley & Sons
ISBN 13 : 0470012072
Total Pages : 574 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials by : Peter Capper

Download or read book Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2005-10-31 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa

NASA Patent Abstracts Bibliography

Author : United States. National Aeronautics and Space Administration. Scientific and Technical Information Office
Publisher :
ISBN 13 :
Total Pages : 646 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis NASA Patent Abstracts Bibliography by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Office

Download or read book NASA Patent Abstracts Bibliography written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Office and published by . This book was released on with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Springer Handbook of Crystal Growth

Author : Govindhan Dhanaraj
Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Springer Handbook of Crystal Growth by : Govindhan Dhanaraj

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC

Author : W. Dietze
Publisher : Springer Science & Business Media
ISBN 13 : 9783540114741
Total Pages : 680 pages
Book Rating : 4.1/5 (147 download)

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Book Synopsis Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC by : W. Dietze

Download or read book Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC written by W. Dietze and published by Springer Science & Business Media. This book was released on 1983-12 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physical Chemistry of Semiconductor Materials and Processes

Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118514556
Total Pages : 416 pages
Book Rating : 4.1/5 (185 download)

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Book Synopsis Physical Chemistry of Semiconductor Materials and Processes by :

Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Silicon Carbide and Related Materials 2013

Author : Hajime Okumura
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038263915
Total Pages : 1252 pages
Book Rating : 4.0/5 (382 download)

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Book Synopsis Silicon Carbide and Related Materials 2013 by : Hajime Okumura

Download or read book Silicon Carbide and Related Materials 2013 written by Hajime Okumura and published by Trans Tech Publications Ltd. This book was released on 2014-02-26 with total page 1252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan

Crystal Growth Bibliography

Author :
Publisher : Springer Nature
ISBN 13 : 1461596181
Total Pages : 270 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Crystal Growth Bibliography by :

Download or read book Crystal Growth Bibliography written by and published by Springer Nature. This book was released on 1981 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Air Force Research Resumés

Author :
Publisher :
ISBN 13 :
Total Pages : 854 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Air Force Research Resumés by :

Download or read book Air Force Research Resumés written by and published by . This book was released on with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NASA Patent Abstracts Bibliography

Author : United States. National Aeronautics and Space Administration. Scientific and Technical Information Program
Publisher :
ISBN 13 :
Total Pages : 624 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis NASA Patent Abstracts Bibliography by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Program

Download or read book NASA Patent Abstracts Bibliography written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Program and published by . This book was released on 1992 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: