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Author :
Publisher :
ISBN 13 :
Total Pages : 46 pages
Book Rating : 4.:/5 (933 download)
Download or read book A Theoretical Model of Heavily Doped Semiconductors written by and published by . This book was released on 1982 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Viktor Leopolʹdovich Bonch-Bruevich
Publisher :
ISBN 13 :
Total Pages : 152 pages
Book Rating : 4.:/5 (34 download)
Download or read book The Electronic Theory of Heavily Doped Semiconductors written by Viktor Leopolʹdovich Bonch-Bruevich and published by . This book was released on 1966 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : V. I. Fistul
Publisher : Springer Science & Business Media
ISBN 13 : 146848821X
Total Pages : 428 pages
Book Rating : 4.4/5 (684 download)
Download or read book Heavily Doped Semiconductors written by V. I. Fistul and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Author : Viktor Leopolʹdovich Bonch-Bruevich
Publisher :
ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Electronic Theory of Heavily Doped Semiconductors written by Viktor Leopolʹdovich Bonch-Bruevich and published by . This book was released on 1966 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Takeshi Kaneto
Publisher :
ISBN 13 :
Total Pages : 194 pages
Book Rating : 4.:/5 (267 download)
Download or read book Theory of Electron Transport in Heavily-doped Semiconductors written by Takeshi Kaneto and published by . This book was released on 1992 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Reli Rosman
Publisher :
ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.:/5 (87 download)
Download or read book On the Theory of Heavily Doped Semiconductors written by Reli Rosman and published by . This book was released on 1977 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B.I. Shklovskii
Publisher : Springer Science & Business Media
ISBN 13 : 3662024039
Total Pages : 400 pages
Book Rating : 4.6/5 (62 download)
Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Author : Viktor Leopolʹdovich Bonch-Bruevich
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (844 download)
Download or read book The electronic theory of heavily doped semiconductors, by V.L. Bonch-Bruyevich, tr written by Viktor Leopolʹdovich Bonch-Bruevich and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : V. L. Bonch-Bruyevich
Publisher :
ISBN 13 :
Total Pages : 131 pages
Book Rating : 4.:/5 (643 download)
Download or read book The Electron Theory of Heavily Doped Semiconductors ; Trans. by R.S. Knox written by V. L. Bonch-Bruyevich and published by . This book was released on 1966 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Curt H. Liebert
Publisher :
ISBN 13 :
Total Pages : 36 pages
Book Rating : 4.:/5 (31 download)
Download or read book Spectral Emissivity of Highly Doped Silicon written by Curt H. Liebert and published by . This book was released on 1968 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gershoni David
Publisher : World Scientific
ISBN 13 : 9814544426
Total Pages : 332 pages
Book Rating : 4.8/5 (145 download)
Download or read book Physics Of Semiconductors, The - Proceedings Of The 24th International Conference (With Cd-rom) written by Gershoni David and published by World Scientific. This book was released on 1999-03-12 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.
Author :
Publisher :
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.3/5 (91 download)
Download or read book NBS Special Publication written by and published by . This book was released on 1971 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : D.M. Finlayson
Publisher : CRC Press
ISBN 13 : 9780905945149
Total Pages : 438 pages
Book Rating : 4.9/5 (451 download)
Download or read book Localisation and Interaction written by D.M. Finlayson and published by CRC Press. This book was released on 1986-01-01 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Localisation and Interaction covers the scaling theory of localization metal-insulator transitions, two-dimensional systems, interaction effects in impure metals, weak localization, critical point measurement, quantum wells, integer quantum Hall effects, magnetic field induced transitions, static and dynamic magnetic probes, band gap narrowing, and an experiment with the quantum Hall effects.
Author :
Publisher :
ISBN 13 :
Total Pages : 906 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Author : Charles P. Poole Jr.
Publisher : Academic Press
ISBN 13 : 0080545238
Total Pages : 1658 pages
Book Rating : 4.0/5 (85 download)
Download or read book Encyclopedic Dictionary of Condensed Matter Physics written by Charles P. Poole Jr. and published by Academic Press. This book was released on 2004-03-11 with total page 1658 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a translation and revision of the Original Russian version by Baryahktar. It covers all of the main fields involved in Condensed Matter Physics, such as crystallography, electrical properties, fluids, magnetism, material properties, optics, radiation, semiconductors, and superconductivity, as well as highlights of important related subjects such as quantum mechanics, spectroscopy, and statistical mechanics. Both theoretical and experimental aspects of condensed matter are covered in detail. The entries range from very short paragraphs on topics where definitions are needed, such as Bloch's law, clathrate compound, donor, domain, Kondo lattice, mean free path, and Wigner crystal, to long discussions of more general or more comprehensive topics such as antiferromagnetism, crystal lattice dynamics, dislocations, Fermi surface, Josephson effect, luminescence, magnetic films, phase transitions and semiconductors. The main theoretical approaches to Condensed Matter Physics are explained. There are several long tables on, for example, Bravais lattices, characteristics of magnetic materials, units of physical quantities, symmetry groups. The properties of the main elements of the periodic table are given. Numerous entries not covered by standard Solid State Physics texts o Self-similarity o The adiabatic approximation o Bistability Emphasis on materials not discussed in standard texts o Activated carborn o Austenite o Bainite o Calamitics o Carbine o Delat phase o Discotics o Gunier-Preston zones o Heterodesmic structures o Heusler Alloys o Stress and strain deviators o Vicalloy · Each entry is fully cross-referenced to help tracking down all aspects of a topic under investigation Highly illustrated to clarify many concepts
Author : Jo Nijs
Publisher : CRC Press
ISBN 13 : 9780750302999
Total Pages : 490 pages
Book Rating : 4.3/5 (29 download)
Download or read book Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices written by Jo Nijs and published by CRC Press. This book was released on 1994-01-01 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Author : Freeman D. Shepherd (Jr.)
Publisher :
ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.3/5 (91 download)
Download or read book A Study of Band Edge Distortion in Heavily Doped Germanium written by Freeman D. Shepherd (Jr.) and published by . This book was released on 1965 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1/e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. (Author).
