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A Simulation Study Of Zinc Oxide Nanowire Field Effect Transistors Zno Nwfets
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Book Synopsis A Simulation Study of Zinc Oxide Nanowire Field-effect Transistors (ZnO NWFETs) by : Noel Michael D'Souza
Download or read book A Simulation Study of Zinc Oxide Nanowire Field-effect Transistors (ZnO NWFETs) written by Noel Michael D'Souza and published by . This book was released on 2008 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc Oxide (ZnO) is a promising semiconductor material for future transistors and when grown as nanowires, is an exciting prospect for high-performance nanowire field effect transistors (NWFETs). To understand the performance limits of the material and the nanowire device structure, this thesis analyzes the electrical characteristics of ZnO NWFETs through the use of a three-dimensional simulator of NWFETs with multiple gates, NanowireMG, developed by Mincheol Shin at the Information and Communications University in Korea and provided courtesy of nanoHUB, a web-based resource by Purdue University. Chapter 2 examines ZnO and its important physical and electrical properties along with various methods of nanowire growth. This is followed by a description of the software in Chapter 3 which examines the numerical techniques used in the simulations and provides results for a simulation example of a Si NWFET using the software. In Chapter 4, we describe various experimental studies performed by different groups on ZnO NWFETs and present their results. Chapter 5 includes the results of simulations performed by varying different aspects of the device, including gate configuration (single- to quad- gate), channel length, nanowire diameter, dielectric constant, aspect ratio (channel length/width) and temperature. A comparison is then drawn between the results obtained by Mincheol Shin [1-3] for Si NWFETs using the same software tool and our simulation results for ZnO NWFETs. This thesis concludes by summarizing the important results acquired from the simulations and charting a course of action to enhance device performance for future work.
Book Synopsis ZnO Nanowire Field-Effect Transistor for Biosensing by : Nonofo Mathiba Jack Ditshego
Download or read book ZnO Nanowire Field-Effect Transistor for Biosensing written by Nonofo Mathiba Jack Ditshego and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last 19 years have seen intense research made on zinc oxide (ZnO) material, mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. This chapter focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field-effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalization that is achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.
Book Synopsis ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics by : Fábio Fedrizzi Vidor
Download or read book ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics written by Fábio Fedrizzi Vidor and published by Springer. This book was released on 2017-12-28 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the integration, characterization and analysis of cost-efficient thin-film transistors (TFTs), applying zinc oxide as active semiconductors. The authors discuss soluble gate dielectrics, ZnO precursors, and dispersions containing nanostructures of the material, while different transistor configurations are analyzed with respect to their integration, compatibility, and device performance. Additionally, simple circuits (inverters and ring oscillators) and a complementary design employing (in)organic semiconducting materials are presented and discussed. Readers will benefit from concise information on cost-efficient materials and processes, applied in flexible and transparent electronic technology, such as the use of solution-based materials and dispersion containing nanostructures, as well as discussion of the physical fundamentals responsible for the operation of the thin-film transistors and the non-idealities of the device.
Book Synopsis Drain Current Modeling of Thin-film Zinc-oxide Field Effect Transistors of Various Fabrication Methods by : Daniel Wade Evans
Download or read book Drain Current Modeling of Thin-film Zinc-oxide Field Effect Transistors of Various Fabrication Methods written by Daniel Wade Evans and published by . This book was released on 2013 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ZnO Nanostructures written by Yue Zhang and published by Royal Society of Chemistry. This book was released on 2017-06-21 with total page 307 pages. Available in PDF, EPUB and Kindle. Book excerpt: As wide band semiconductors with rich morphologies and interesting electric, optical, mechanical and piezoelectric properties, ZnO nanostructures have great potential in applications, such as strain sensors, UV detectors, blue LED, nano generators, and biosensors. ZnO Nanostructures: Fabrication and Applications covers the controllable synthesis and property optimization of ZnO nanostructures through to the preparation and performance of nanodevices for various applications. The book also includes recent progress in property modulation of ZnO nanomaterials and new types of devices as well as the latest research on self-powered devices and performance modulation of ZnO nanodevices by multi-field coupled effects. Authored by a leading researcher working within the field, this volume is applicable for those working in nanostructure fabrication and device application in industry and academia and is appropriate from advanced undergraduate level upwards.
Book Synopsis Fabrication and Characterization of Zinc Oxide Nanowire Field Effect Transistors by : Vamsi Krishna Kunapuli
Download or read book Fabrication and Characterization of Zinc Oxide Nanowire Field Effect Transistors written by Vamsi Krishna Kunapuli and published by . This book was released on 2008 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Top-down Fabrication and Characterization of Zinc Oxide Nanowire Field Effect Transistors by : Suhana Sultan
Download or read book Top-down Fabrication and Characterization of Zinc Oxide Nanowire Field Effect Transistors written by Suhana Sultan and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Zinc Oxide Nanowire Field Effect Transistors by : Stanko Nedic
Download or read book Zinc Oxide Nanowire Field Effect Transistors written by Stanko Nedic and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors by : Hao Xue
Download or read book Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors written by Hao Xue and published by . This book was released on 2016 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this MS thesis study, we investigate the low frequency noise characteristics of ZnO nanowire field effect transistors (FETs). Three low frequency noise models including Hooge's model, Carrier Number Fluctuation (CNF) model, and CNF correlated with mobility fluctuation model are applied to the nanowire FETs case to study the mechanism of the low frequency noise. The 1/f noise power spectrum density is observed in both room temperature and low temperature down to 10K.
Book Synopsis Study of Charge Transport Through Zinc Oxide Nanowire Networks for Transparent Electrodes by : Sujay Abhay Phadke
Download or read book Study of Charge Transport Through Zinc Oxide Nanowire Networks for Transparent Electrodes written by Sujay Abhay Phadke and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Indium Tin Oxide (ITO) is a transparent conductor widely used for fabricating transparent electrodes in solar cells, OLEDs, flat screen displays, touch screens and electro-chromic windows. In recent years the demand for these electronic devices has shown a double digit growth. Since Indium is a rare element, the rising demand for transparent electrodes will drive up the cost of ITO multi-fold. Thus it is the need of the time to find a suitable alternative low cost transparent conductor that can replace ITO in transparent conducting electrodes. ZnO is a wide band gap semiconducting oxide (Eg ~ 3.4eV) that has the potential to replace ITO as a cheap and flexible transparent electrode material. ZnO nanowires (NWs) can be easily synthesized and n-doped using a solution based synthesis process. The solution processed ZnO NW thin films however have a high sheet resistance (~1k[ohm]/[cube] post annealing) that needs to be reduced further. Hence charge transport in ZnO NW thin films has been studied using various experimental and simulation based techniques to reveal the factors causing high sheet resistance. The effect of ZnO NW orientation on thin film sheet resistance has been studied by aligning ZnO NWs in-plane on substrates. 2D NW network simulations coupled with aligned ZnO NW thin film electrical measurements have revealed that the NW-NW junction resistance is the dominating factor affecting charge transport. Electrochemical impedance spectroscopy (EIS) characterization has experimentally confirmed the presence of high NW junction resistance and revealed that annealing affects NW junctions. TEM characterization of in-situ annealed NW junction and micro-Raman spectroscopy of annealed ZnO NW mat film have uncovered a fascinating picture of the effect of annealing on ZnO NW junctions. Furthermore a versatile E2D methodology has been developed by combining the EIS measurement technique with 2D NW network simulations for extracting individual NW junction resistance i.e. extracting nano-scale electrical properties from macro-scale EIS measurements. NW junction resistance predicted by E2D has been verified by fabricating and measuring individual ZnO NW junction and single ZnO NW devices. The E2D methodology has been shown to be promising to study charge transport in other 1D nano-structured transparent conducting ensembles. Various applications of ZnO NW thin film electrodes have been discussed and research work on further reducing the ZnO NW thin film sheet resistance has been presented.
Book Synopsis Zinc Oxide Nanowire Field Effect Transistors for Biosensing by : Nonofo Jack Ditshego
Download or read book Zinc Oxide Nanowire Field Effect Transistors for Biosensing written by Nonofo Jack Ditshego and published by . This book was released on 2015 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Zinc Oxide Nanowire Field Effect Transistors for Sensor Applications by : Nikhil Tiwale
Download or read book Zinc Oxide Nanowire Field Effect Transistors for Sensor Applications written by Nikhil Tiwale and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanowire Field Effect Transistors by : Dae Mann Kim
Download or read book Nanowire Field Effect Transistors written by Dae Mann Kim and published by Springer. This book was released on 2013-10-31 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication and Characterization of High Performance Zinc Oxide Nanowire Field-effect Transistors by : Nor Azlin Ghazali
Download or read book Design, Fabrication and Characterization of High Performance Zinc Oxide Nanowire Field-effect Transistors written by Nor Azlin Ghazali and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Zinc Oxide Thin-Film Transistors for 3D Microelectronic Applications by : Sang Ha Yoo
Download or read book Zinc Oxide Thin-Film Transistors for 3D Microelectronic Applications written by Sang Ha Yoo and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As the current semiconductor industry trend deviates from Moore's Law due to quantum limits discovered upon further scaling of technology nodes, efforts are being put into three-dimensional (3D) stacking of semiconductor devices in integrated circuits (ICs). Since its conduction band pathway arises from its spherically shaped s-orbital, zinc oxide (ZnO) is a promising material for technological advancement towards 3D-stacked devices since it can theoretically retain its bulk mobility even if it is processed at a low temperature. Plasma-enhanced atomic layer deposition (PEALD) system using weak oxidants was utilized to deposit ZnO at a low temperature ( 200 °C), and ZnO thin-film transistors (TFTs) were fabricated based on this system for this study. This dissertation presents efforts to develop ZnO TFTs that are suitable for 3D electronics applications, focusing on high mobility, high current, and scalability aspects of the device. The relationship between the ZnO TFT mobility and the morphology of PEALD ZnO films is studied with emphasis on the grain size variation of the ZnO films. For the nanocrystalline PEALD ZnO films, no direct relationship between grain size and mobility was discovered from the study. On the other hand, a simple N2O-based PEALD Al2O3 passivation layer that enhances the performance of ZnO TFTs by an order of magnitude is developed. The passivated ZnO TFTs exhibit field-effect mobility 90 cm2/Vs and drive current >450 mA/mm. Multiple mobility extraction methods confirm that the high mobility value calculated for the passivated TFTs is not from measurement artifacts. The high current and mobility of the N2O PEALD passivated ZnO TFTs remain even when the passivation layer is selectively removed. The cause of the mobility boost is postulated to be hydrogen incorporation during the passivation process. The high performance of these devices is of interest for 3D ICs and other applications. Metals of different reactivity and work function are explored to overcome the Schottky barrier present in ZnO TFTs. Oxygen vacancies and zinc interstitials generated from the reaction between contact metal and ZnO semiconductors are believed to serve as the source of increased charge carriers to mimic a doping effect at TFT contacts. In addition, doped contact ZnO TFTs are demonstrated as well. We use PEALD ZnO films as the active layer and ALD ZnO films as the doped layer. The fabrication process of PEALD ZnO TFTs with ALD ZnO doped layer resembles that of back-channel-etched a-Si: H TFTs. An acetic acid-based ZnO etchant is used to controllably back etch the channel layer at a rate of 2 nm/sec to etch away the conductive ALD ZnO layer. The fabricated devices exhibit less dominance by the Schottky barrier at contacts. Ferroelectric field-effect transistors (FeFET) using low-temperature processed boron-doped aluminum nitride (Al1-xBxN; AlBN for simplicity) as the gate dielectric are also developed to serve as memory devices combined with ZnO TFT logic devices. With the help of a stable PEALD Al2O3 layer to prevent gate leakage, fabricated ZnO-AlBN FeFETs demonstrated counter-clockwise hysteresis, which is one of the indications of ferroelectricity present in the device. Double-gated ZnO-AlBN FeFETs are also fabricated to further establish that the devices exhibit polarization behavior with known field line terminations. ZnO TFTs and AlBN FeFETs are of interest to the future 3D microelectronics and ICs.
Book Synopsis ZnO-based Metal Semiconductor Field Effect Transistors by : Heiko Frenzel
Download or read book ZnO-based Metal Semiconductor Field Effect Transistors written by Heiko Frenzel and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure Simulation Study of Aluminum Nitride and Zinc Oxide Nanowires by : Pavan K. Pillalamarri
Download or read book Electronic Structure Simulation Study of Aluminum Nitride and Zinc Oxide Nanowires written by Pavan K. Pillalamarri and published by . This book was released on 2013 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
