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2011 International Conference On Compound Semiconductor Manufacturing Technology
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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Compound Semiconductor Materials and Devices by : Zhaojun Liu
Download or read book Compound Semiconductor Materials and Devices written by Zhaojun Liu and published by Springer Nature. This book was released on 2022-06-01 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Book Synopsis CMOS and Beyond by : Tsu-Jae King Liu
Download or read book CMOS and Beyond written by Tsu-Jae King Liu and published by Cambridge University Press. This book was released on 2015-02-05 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Get up to speed with the future of logic switch design with this indispensable overview of the most promising successors to modern CMOS transistors. Learn how to overcome existing design challenges using novel device concepts, presented using an in-depth, accessible, tutorial-style approach. Drawing on the expertise of leading researchers from both industry and academia, and including insightful contributions from the developers of many of these alternative logic devices, new concepts are introduced and discussed from a range of different viewpoints, covering all the necessary theoretical background and developmental context. Covering cutting-edge developments with the potential to overcome existing limitations on transistor performance, such as tunneling field-effect transistors (TFETs), alternative charge-based devices, spin-based devices, and more exotic approaches, this is essential reading for academic researchers, professional engineers, and graduate students working with semiconductor devices and technology.
Book Synopsis Extreme Environment Electronics by : John D. Cressler
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis Handbook of Terahertz Technologies by : Ho-Jin Song
Download or read book Handbook of Terahertz Technologies written by Ho-Jin Song and published by CRC Press. This book was released on 2015-04-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has trigg
Book Synopsis Different Types of Field-Effect Transistors by : Momčilo Pejović
Download or read book Different Types of Field-Effect Transistors written by Momčilo Pejović and published by BoD – Books on Demand. This book was released on 2017-06-07 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Book Synopsis Practical Microstrip and Printed Antenna Design by : Anil Pandey
Download or read book Practical Microstrip and Printed Antenna Design written by Anil Pandey and published by Artech House. This book was released on 2019-03-31 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive resource presents antenna fundamentals balanced with the design of printed antennas. Over 70 antenna projects, along with design dimensions, design flows and antenna performance results are discussed, including antennas for wireless communication, 5G antennas and beamforming. Examples of smartphone antennas, MIMO antennas, aerospace and satellite remote sensing array antennas, automotive antennas and radar systems and many more printed antennas for various applications are also included. These projects include design dimensions and parameters that incorporate the various techniques used by industries and academia. This book is intended to serve as a practical microstrip and printed antenna design guide to cover various real-world applications. All Antenna projects discussed in this book are designed, analyzed and simulated using full-wave electromagnetic solvers. Based on several years of the author’s research in antenna design and development for RF and microwave applications, this book offers an in-depth coverage of practical printed antenna design methodology for modern applications.
Download or read book ISTFA 2011 written by and published by ASM International. This book was released on 2011 with total page 479 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis Nanoscale Devices by : Brajesh Kumar Kaushik
Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Book Synopsis Handbook of Recycling by : Ernst Worrell
Download or read book Handbook of Recycling written by Ernst Worrell and published by Newnes. This book was released on 2014-04-28 with total page 595 pages. Available in PDF, EPUB and Kindle. Book excerpt: Winner of the International Solid Waste Association's 2014 Publication Award, Handbook of Recycling is an authoritative review of the current state-of-the-art of recycling, reuse and reclamation processes commonly implemented today and how they interact with one another. The book addresses several material flows, including iron, steel, aluminum and other metals, pulp and paper, plastics, glass, construction materials, industrial by-products, and more. It also details various recycling technologies as well as recovery and collection techniques. To completely round out the picture of recycling, the book considers policy and economic implications, including the impact of recycling on energy use, sustainable development, and the environment. With contemporary recycling literature scattered across disparate, unconnected articles, this book is a crucial aid to students and researchers in a range of disciplines, from materials and environmental science to public policy studies. - Portrays recent and emerging technologies in metal recycling, by-product utilization and management of post-consumer waste - Uses life cycle analysis to show how to reclaim valuable resources from mineral and metallurgical wastes - Uses examples from current professional and industrial practice, with policy and economic implications
Book Synopsis Fabless Semiconductor Manufacturing by : Chinmay K. Maiti
Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Book Synopsis Developments in Surface Contamination and Cleaning: Methods for Surface Cleaning by : Rajiv Kohli
Download or read book Developments in Surface Contamination and Cleaning: Methods for Surface Cleaning written by Rajiv Kohli and published by William Andrew. This book was released on 2016-11-04 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developments in Surface Contamination and Cleaning: Methods for Surface Cleaning, Volume 9, part of the Developments in Surface Contamination and Cleaning series provide a state-of-the-art guide to the current knowledge on the behavior of film-type and particulate surface contaminants and their associated cleaning methods. This newest volume in the series discusses methods of surface cleaning of contaminants and the resources that are needed to deal with them. Taken as a whole, the series forms a unique reference for professionals and academics working in the area of surface contamination and cleaning. A strong theme running through the series is that of surface contamination and cleaning at the micro and nano scales. - Provides a comprehensive coverage of innovations in surface cleaning - Written by established experts in the surface cleaning field, presenting an authoritative resource - Contains a comprehensive review of the state-of-the-art, including case studies to enhance the learning process
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Materials and Reliability Handbook for Semiconductor Optical and Electron Devices by : Osamu Ueda
Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-22 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.
Book Synopsis Probing Unconventional Transport Regimes in Delafossite Metals by : Philippa H. McGuinness
Download or read book Probing Unconventional Transport Regimes in Delafossite Metals written by Philippa H. McGuinness and published by Springer Nature. This book was released on 2022-10-01 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes in-depth studies of the remarkable electronic transport within the ultrahigh conductivity delafossite metals PtCoO_2 and PdCoO_2 using the tool of focused ion beam (FIB) microstucturing. Despite being first synthesised over 50 years ago, important questions remain regarding both the origin of the unusually high conductivity of these compounds and the consequences of their unique properties for unconventional electronic transport, such as that within the ballistic regime. The thesis explores both these areas. High-energy electron irradiation is used to examine the effects of deliberately introducing point defects into PdCoO_2 and PtCoO_2, demonstrating that the extremely low resistivity of these materials stems from an extreme purity as high as 1 defect in 120,000 atoms, rather than a novel scattering suppression mechanism. In addition, studies of the electronic transport in micron-scale squares of these metals show that their broadly hexagonal Fermi surfaces lead not only to long range ballistic behaviour but novel ballistic regime phenomena which cannot be observed in materials with a higher-symmetry Fermi surface.
