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Wafer Level Reliability Of Advanced Cmos Devices And Processes
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Book Synopsis Wafer Level Reliability of Advanced CMOS Devices and Processes by : Yi Zhao
Download or read book Wafer Level Reliability of Advanced CMOS Devices and Processes written by Yi Zhao and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The definition from SEMATECH of wafer level reliability test is: a methodology to assess the reliability impact of tools and processes by testing mechanism-specific test structures under accelerated conditions during device processing. Because wafer level reliability test is the accelerated test, it owns some different characters with common long time test in terms of failure mechanisms, test procedures, life time prediction, test structures design and so on. In this book, all items of wafer level reliability of CMOS devices and processes will be discussed. The purpose of this book is to provide a good and urgently need reference on MOS device reliability. The authors discuss how to enhance the veracity of lifetime prediction and the effects to degrade the veracity deeply. Finally, a discussion of the problems with wafer level reliability in terms of the engineering applications and research is given.
Book Synopsis Reliability Wearout Mechanisms in Advanced CMOS Technologies by : Alvin W. Strong
Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by Wiley-IEEE Press. This book was released on 2009-08-24 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias Temperature Instability Hot Carrier Injection Electromigration Reliability Stress Voiding Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.
Book Synopsis Reliability Wearout Mechanisms in Advanced CMOS Technologies by : Alvin W. Strong
Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco
Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Book Synopsis Reliability Issues and Design Solutions in Advanced CMOS Design by : Ankita Bansal
Download or read book Reliability Issues and Design Solutions in Advanced CMOS Design written by Ankita Bansal and published by . This book was released on 2016 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over decades, scientists have been scaling devices to increasingly smaller feature sizes for ever better performance of complementary metal-oxide semiconductor (CMOS) technology to meet requirements on speed, complexity, circuit density, power consumption and ultimately cost required by many advanced applications. However, going to these ultra-scaled CMOS devices also brings some drawbacks. Aging due to bias-temperature-instability (BTI) and Hot carrier injection (HCI) is the dominant cause of functional failure in large scale logic circuits. The aging phenomena, on top of process variations, translate into complexity and reduced design margin for circuits. Such issues call for "Design for Reliability". In order to increase the overall design efficiency, it is important to (i) study the impact of aging on circuit level along with the transistor level understanding (ii) calibrate the theoretical findings with measurement data (iii) implementing tools that analyze the impact of BTI and HCI reliability on circuit timing into VLSI design process at each stage. In this work, post silicon measurements of a 28nm HK-MG technology are done to study the effect of aging on Frequency Degradation of digital circuits. A novel voltage controlled ring oscillator (VCO) structure, developed by NIMO research group is used to determine the effect of aging mechanisms like NBTI, PBTI and SILC on circuit parameters. Accelerated aging mechanism is proposed to avoid the time consuming measurement process and extrapolation of data to the end of life thus instead of predicting the circuit behavior, one can measure it, within a short period of time. Finally, to bridge the gap between device level models and circuit level aging analysis, a System Level Reliability Analysis Flow (SyRA) developed by NIMO group, is implemented for a TSMC 65nm industrial level design to achieve one-step reliability prediction for digital design.
Book Synopsis Wafer-Level Testing and Test During Burn-In for Integrated Circuits by : Sudarshan Bahukudumbi
Download or read book Wafer-Level Testing and Test During Burn-In for Integrated Circuits written by Sudarshan Bahukudumbi and published by Artech House. This book was released on 2010 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wafer-level testing refers to a critical process of subjecting integrated circuits and semiconductor devices to electrical testing while they are still in wafer form. Burn-in is a temperature/bias reliability stress test used in detecting and screening out potential early life device failures. This hands-on resource provides a comprehensive analysis of these methods, showing how wafer-level testing during burn-in (WLTBI) helps lower product cost in semiconductor manufacturing. Engineers learn how to implement the testing of integrated circuits at the wafer-level under various resource constraints. Moreover, this unique book helps practitioners address the issue of enabling next generation products with previous generation testers. Practitioners also find expert insights on current industry trends in WLTBI test solutions.
Book Synopsis BiCMOS Technology and Applications by : Antonio R. Alvarez
Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Book Synopsis Wafer Level 3-D ICs Process Technology by : Chuan Seng Tan
Download or read book Wafer Level 3-D ICs Process Technology written by Chuan Seng Tan and published by Springer Science & Business Media. This book was released on 2009-06-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.
Download or read book NISTIR. written by and published by . This book was released on 2001 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Book Synopsis 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics by : Simon Li
Download or read book 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics written by Simon Li and published by Springer Science & Business Media. This book was released on 2011-10-01 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Book Synopsis Semiconductor Device Reliability by : A. Christou
Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Book Synopsis Advanced CMOS Devices and Applications by : Yi Zhao
Download or read book Advanced CMOS Devices and Applications written by Yi Zhao and published by Mdpi AG. This book was released on 2024-01-18 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dive into the forefront of semiconductor technology with our Special Issue reprint entitled, "Advanced CMOS Devices and Applications." This compilation unites a spectrum of contributions from leading experts, offering a captivating exploration of the latest breakthroughs in semiconductor technology. Uncover groundbreaking insights into 3D-stacked transistors, advanced transistor and memory processing, high-mobility channels, and novel simulation results, showcasing the cutting-edge advancements in advanced CMOS transistors and emerging non-volatile memories. The collection spans diverse topics such as 3D power scaling, advanced transistor processing, and emerging non-volatile memories, providing readers with a comprehensive panorama of the state-of-the-art developments in semiconductor technology. Crafted by eminent researchers, these articles delve into critical challenges and unveil innovative solutions, contributing significantly to the ongoing discourse in the scientific community. Whether you are a seasoned researcher, industry professional, or an eager student keen on grasping the forefront of semiconductor technology, this Reprint stands as a valuable resource. Immerse yourself in the knowledge presented by experts who have shaped the discourse in this dynamic field.
Book Synopsis Novel Advances in Microsystems Technologies and Their Applications by : Laurent A. Francis
Download or read book Novel Advances in Microsystems Technologies and Their Applications written by Laurent A. Francis and published by CRC Press. This book was released on 2017-07-28 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microsystems technologies have found their way into an impressive variety of applications, from mobile phones, computers, and displays to smart grids, electric cars, and space shuttles. This multidisciplinary field of research extends the current capabilities of standard integrated circuits in terms of materials and designs and complements them by creating innovative components and smaller systems that require lower power consumption and display better performance. Novel Advances in Microsystems Technologies and their Applications delves into the state of the art and the applications of microsystems and microelectronics-related technologies. Featuring contributions by academic and industrial researchers from around the world, this book: Examines organic and flexible electronics, from polymer solar cell to flexible interconnects for the co-integration of micro-electromechanical systems (MEMS) with complementary metal oxide semiconductors (CMOS) Discusses imaging and display technologies, including MEMS technology in reflective displays, the fabrication of thin-film transistors on glass substrates, and new techniques to display and quickly transmit high-quality images Explores sensor technologies for sensing electrical currents and temperature, monitoring structural health and critical industrial processes, and more Covers biomedical microsystems, including biosensors, point-of-care devices, neural stimulation and recording, and ultra-low-power biomedical systems Written for researchers, engineers, and graduate students in electrical and biomedical engineering, this book reviews groundbreaking technology, trends, and applications in microelectronics. Its coverage of the latest research serves as a source of inspiration for anyone interested in further developing microsystems technologies and creating new applications.
Book Synopsis Analog IC Reliability in Nanometer CMOS by : Elie Maricau
Download or read book Analog IC Reliability in Nanometer CMOS written by Elie Maricau and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
Book Synopsis Thin Film Materials, Processes, and Reliability by : G. S. Mathad
Download or read book Thin Film Materials, Processes, and Reliability written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2003 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis IEEE International Reliability Physics Symposium Proceedings by : International Reliability Physics Symposium
Download or read book IEEE International Reliability Physics Symposium Proceedings written by International Reliability Physics Symposium and published by . This book was released on 2002 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt:
