Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Transient Diffusion Of Dopants In Gallium Arsenide full books in PDF, epub, and Kindle. Read online Transient Diffusion Of Dopants In Gallium Arsenide ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Yaser Mahmoud Haddara
Publisher :
ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (789 download)
Download or read book Transient Diffusion of Dopants in Gallium Arsenide written by Yaser Mahmoud Haddara and published by . This book was released on 1997 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Heyward Gibbes Robinson
Publisher :
ISBN 13 :
Total Pages : 338 pages
Book Rating : 4.:/5 (387 download)
Download or read book Diffusion of P-type Dopants in Gallium Arsenide written by Heyward Gibbes Robinson and published by . This book was released on 1992 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Emily Lin Allen
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.:/5 (386 download)
Download or read book Diffusion of Ion-implanted Group IV N-type Dopants in Gallium Arsenide and Gallium Arsenide-based Superlattices written by Emily Lin Allen and published by . This book was released on 1991 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ashish Tandon
Publisher :
ISBN 13 :
Total Pages : 362 pages
Book Rating : 4.:/5 (388 download)
Download or read book Incorporation and Diffusion of Dopants in Gallium Arsenide, Indium Phosphide and Indium Gallium Arsenide written by Ashish Tandon and published by . This book was released on 1998 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen Ingalls Long
Publisher :
ISBN 13 :
Total Pages : 506 pages
Book Rating : 4.E/5 ( download)
Download or read book Transport Mechanisms in Liquid Phase Epitaxial Growth of Gallium Arsenide written by Stephen Ingalls Long and published by . This book was released on 1974 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: The influence of solute transport mechanisms on growth rates, thickness uniformity, and surface morphology of liquid phase epitaxially grown layers was studied theoretically and experimentally. Steady state diffusion theory was developed to relate temperature gradients, growth temperatures and substrate location to observed growth rates. A vertical steady-state epitaxy system was constructed which uses cylindrical symmetry to achieve good thermal uniformity. A numerical technique was used to calculate temperature distributions in cylindrical graphite boats. The heat conduction equation is solved both with fixed temperature and radiation heat transfer boundary conditions. Good agreement with measured temperature data has been obtained. (Modified author abstract).
Author : Karen Lynne Kavanagh
Publisher :
ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.E/5 ( download)
Download or read book Atomic Diffusion at Polycrystalline-silicon/gallium Arsenide Interfaces written by Karen Lynne Kavanagh and published by . This book was released on 1987 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Ell Tremain
Publisher :
ISBN 13 :
Total Pages : 93 pages
Book Rating : 4.:/5 (386 download)
Download or read book Doping Gallium Arsenide by Ion Implantation and Proton-enhanced Diffusion written by Robert Ell Tremain and published by . This book was released on 1976 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 82 pages
Book Rating : 4.F/5 ( download)
Download or read book Analytical Study of Zinc Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.
Author : G.A. Armstrong
Publisher : IET
ISBN 13 : 0863417434
Total Pages : 457 pages
Book Rating : 4.8/5 (634 download)
Download or read book Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.
Author : Matthew D. McCluskey
Publisher : CRC Press
ISBN 13 : 1439831521
Total Pages : 392 pages
Book Rating : 4.4/5 (398 download)
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : K. S. Jones
Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 648 pages
Book Rating : 4.3/5 (91 download)
Download or read book III-V Electronic and Photonic Device Fabrication and Performance: Volume 300 written by K. S. Jones and published by Mrs Proceedings. This book was released on 1993-08-25 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : T. Y. Tan
Publisher :
ISBN 13 :
Total Pages : 13 pages
Book Rating : 4.:/5 (188 download)
Download or read book Mechanisms of Doping-enhanced Superlattice Disordering and of Gallium Self-diffusion in GaAs written by T. Y. Tan and published by . This book was released on 1988 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Matthew D. McCluskey
Publisher : CRC Press
ISBN 13 : 1351977970
Total Pages : 475 pages
Book Rating : 4.3/5 (519 download)
Download or read book Dopants and Defects in Semiconductors, Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Author : Waldemar von Münch
Publisher :
ISBN 13 :
Total Pages : 6 pages
Book Rating : 4.:/5 (831 download)
Download or read book Tin and Zinc Diffusion Into Gallium Arsenide from Doped Silicon Dioxide Layers written by Waldemar von Münch and published by . This book was released on 1966 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Vilnis Guntis Kreismanis
Publisher :
ISBN 13 :
Total Pages : 352 pages
Book Rating : 4.E/5 ( download)
Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Fairman
Publisher : Academic Press
ISBN 13 : 0080525261
Total Pages : 307 pages
Book Rating : 4.0/5 (85 download)
Download or read book Semiconducting Chalcogenide Glass I written by Robert Fairman and published by Academic Press. This book was released on 2004-05-10 with total page 307 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chalcogenide glass is made up of many elements from the Chalcogenide group. The glass is transparent to infrared light and is useful as a semiconductor in many electronic devices. For example, chalcogenide glass fibers are a component of devices used to perform laser surgery. This book is a comprehensive survey of the current state of science and technology in the field of chalcogenide semiconductor glasses. While the majority of the book deals with properties of chalcogenide glass, chapters also deal with industrial applications, synthesis and purification of chalcogenide glass, and glass structural modification. The first individual or collective monograph written by Eastern European scientists known to Western readers regarding structural and chemical changes in chalcogenide vitreous semiconductors(CVS)Chapters written by B.G. Kolomiets who discovered the properties of chalcogenide glass in 1955Provides evidence and discussion for problems discussed by authors from opposing positions.
