Thermal Characterization and Modeling of Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.:/5 (289 download)

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Book Synopsis Thermal Characterization and Modeling of Heterojunction Bipolar Transistors by : David S. Whitefield

Download or read book Thermal Characterization and Modeling of Heterojunction Bipolar Transistors written by David S. Whitefield and published by . This book was released on 1993 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 29 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors by :

Download or read book Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors written by and published by . This book was released on 1993 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.

Large-signal Characterization and Modeling of the Heterojunction Bipolar Transistor

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ISBN 13 :
Total Pages : 546 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Large-signal Characterization and Modeling of the Heterojunction Bipolar Transistor by : Douglas Andrew Teeter

Download or read book Large-signal Characterization and Modeling of the Heterojunction Bipolar Transistor written by Douglas Andrew Teeter and published by . This book was released on 1992 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Heterojunction Bipolar Transistors for Circuit Design

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Publisher : John Wiley & Sons
ISBN 13 : 1118921542
Total Pages : 280 pages
Book Rating : 4.1/5 (189 download)

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Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao

Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Characterization and Modeling of Inp/Gainas Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (87 download)

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Book Synopsis Characterization and Modeling of Inp/Gainas Heterojunction Bipolar Transistors by : Solon Jose Spiegel

Download or read book Characterization and Modeling of Inp/Gainas Heterojunction Bipolar Transistors written by Solon Jose Spiegel and published by . This book was released on 1996 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 396 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors by : Kyounghoon Yang

Download or read book Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors written by Kyounghoon Yang and published by . This book was released on 1994 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

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Publisher :
ISBN 13 :
Total Pages : 60 pages
Book Rating : 4.:/5 (186 download)

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Book Synopsis High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors by : B. Gunnar Malm

Download or read book High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors written by B. Gunnar Malm and published by . This book was released on 2002 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Microwave Noise Characterization and Modeling of InP Heterojunction Bipolar Transistors

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Publisher :
ISBN 13 :
Total Pages : 109 pages
Book Rating : 4.:/5 (524 download)

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Book Synopsis Microwave Noise Characterization and Modeling of InP Heterojunction Bipolar Transistors by : Yong Zhong Xiong

Download or read book Microwave Noise Characterization and Modeling of InP Heterojunction Bipolar Transistors written by Yong Zhong Xiong and published by . This book was released on 2003 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications

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Publisher : River Publishers
ISBN 13 : 8793519613
Total Pages : 378 pages
Book Rating : 4.7/5 (935 download)

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Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by : Niccolò Rinaldi

Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

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Publisher : CRC Press
ISBN 13 : 1000794407
Total Pages : 377 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi

Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Distributed Model for Thermal Characterisation of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (748 download)

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Book Synopsis Distributed Model for Thermal Characterisation of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors by : Sharath Patil

Download or read book Distributed Model for Thermal Characterisation of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors written by Sharath Patil and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Demand for high-speed and cost-effective devices has resulted in the development of smaller, high frequency devices. Since semiconductor devices are getting smaller, self-heating effects have become more important. Self-heating increases the temperature of the devices and results in variations in the electrical properties of the circuit in which these devices are used. Hence, it is important to accurately characterize the self-heating effects and develop reliable models, so that these effects can be taken into consideration in the simulations during the design process. This work deals with the development of the Vertical Bipolar Inter-Company (VBIC) model parameters to characterize self-heating in SOI SiGe transistors which have been fabricated by National Semiconductors (NSC). The distributed nature of thermal impedance of the wafer has been studied. The dependence of thermal resistance on the power dissipation has also been verified by DC characterization results. The time domain, DC and frequency domain measurements provide similar results for thermal resistance. The thermal resistance varies from 2400 K/W to 4700 K/W for a 0.25x20 [mu]m2 device manufactured by NSC.

Modeling and Characterization of Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (932 download)

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Book Synopsis Modeling and Characterization of Heterojunction Bipolar Transistors by :

Download or read book Modeling and Characterization of Heterojunction Bipolar Transistors written by and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electro-thermal Characterization, TCAD Simulations and Compact Modeling of Advanced SiGe HBTs at Device and Circuit Level

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Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (961 download)

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Book Synopsis Electro-thermal Characterization, TCAD Simulations and Compact Modeling of Advanced SiGe HBTs at Device and Circuit Level by : Rosario D'Esposito

Download or read book Electro-thermal Characterization, TCAD Simulations and Compact Modeling of Advanced SiGe HBTs at Device and Circuit Level written by Rosario D'Esposito and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is focused on the characterization of electro-thermal effects in advanced SiGe hetero-junction bipolar transistors (HBTs); two state of the art BiCMOS processes have been analyzed: the B11HFC from Infineon Technologies (130nm) and the B55 from STMicroelectronics (55nm).Special test structures have been designed, in order to evaluate the overall electro-thermal impact of the back end of line (BEOL) in single finger and multi-finger components. A complete DC and RF electrical characterization at small and large signal, as well as the extraction of the device static and dynamic thermal parameters are performed on the proposed test structures, showing a sensible improvement of the DC and RF figures of merit when metal dummies are added upon the transistor. The thermal impact of the BEOL has been modeled and experimentally verified in the time and frequency domain and by means of 3D TCAD simulations, in which the effect of the doping profile on the thermal conductivity is analyzed and taken into account.Innovative multi-finger transistor topologies are designed, which allow an improvement of the SOA specifications, thanks to a careful design of the drawn emitter area and of the deep trench isolation (DTI) enclosed area.A compact thermal model is proposed for taking into account the mutual thermal coupling between the emitter stripes of multi-finger HBTs in dynamic operation and is validated upon dedicated pulsed measurements and TCAD simulations.Specially designed circuit blocks have been realized and measured, in order to verify the accuracy of device compact models in electrical circuit simulators; moreover the impact on the circuit performances of mutual thermal coupling among neighboring transistors and the presence of BEOL metal dummies is evaluated and modeled.

Microwave Characterization and Modeling of Silicon-germanium Heterojunction Bipolar Transistors

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Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.:/5 (46 download)

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Book Synopsis Microwave Characterization and Modeling of Silicon-germanium Heterojunction Bipolar Transistors by : William E. Ansley

Download or read book Microwave Characterization and Modeling of Silicon-germanium Heterojunction Bipolar Transistors written by William E. Ansley and published by . This book was released on 1998 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments

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Publisher :
ISBN 13 : 9781303059681
Total Pages : 750 pages
Book Rating : 4.0/5 (596 download)

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Book Synopsis Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments by : Beth Olivia Woods

Download or read book Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments written by Beth Olivia Woods and published by . This book was released on 2013 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance. In this work, a compact model referenced at 300K was developed to accurately represent both DC and AC electrical performance of the SiGe HBT over an extended temperature range, down to 93K. This single expansive temperature, SET, model supports all functions of circuit simulation; DC quiescent operation and AC frequency response. The SET model was developed from the Mextram 504.7 bipolar model and accurately represents full transistor operation over an extreme temperature environment. The model correctly simulates SiGe HBT DC output performance from saturation, through quasi-saturation and the linear region including impact ionization effects. This model was developed through a combination of physical calculations based on doping profiles and optimization techniques for modeling fitting. The SET model of this dissertation added 32 parameters to the original Mextram 504.7 model's 78 parameters. The device's static and dynamic performance over the full temperature range down to 93K was fitted with a single group of SET model parameters. The model results show excellent correlation with measured data over the entire temperature range.

Modeling and Characterization of Heterojunction Bipolar Transistor as an Optoelectronic Mixer

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Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (96 download)

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Book Synopsis Modeling and Characterization of Heterojunction Bipolar Transistor as an Optoelectronic Mixer by : Nur Amirah Shaharuddin

Download or read book Modeling and Characterization of Heterojunction Bipolar Transistor as an Optoelectronic Mixer written by Nur Amirah Shaharuddin and published by . This book was released on 2011 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization and Modeling of the ALGaAs-GaAs Heterojunction Bipolar Transistor

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Publisher :
ISBN 13 :
Total Pages : 228 pages
Book Rating : 4.:/5 (183 download)

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Book Synopsis Characterization and Modeling of the ALGaAs-GaAs Heterojunction Bipolar Transistor by : Beth Olivia Woods

Download or read book Characterization and Modeling of the ALGaAs-GaAs Heterojunction Bipolar Transistor written by Beth Olivia Woods and published by . This book was released on 1988 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: